Search results for "Transistor"
showing 10 items of 234 documents
Resonant Tunneling through a Macroscopic Charge State in a Superconducting Single Electron Transistor
1997
We predict theoretically and observe in experiment that the differential conductance of a superconducting single electron transistor exhibits a peak which is a complete analog, in a macroscopic system, of a standard resonant tunneling peak associated with tunneling through a single quantum state. In particular, in a symmetric transistor, the peak height is universal and equal to ${e}^{2}/2\ensuremath{\pi}\ensuremath{\Elzxh}$. Away from the resonance we clearly observe the cotunneling current which, in contrast to the normal-metal transistor, varies linearly with the bias voltage.
Electronic and Thermal Sequential Transport in Metallic and Superconducting Two-Junction Arrays
2010
The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a self-consistent review of sequential transport processes in such devices, based on the so-called “orthodox” model. We calculate numerically the current-voltage (I–V) curves, the conductance versus bias voltage (G–V) curves, and the associated thermal transport in symmetric and asymmetric two-junction arrays such as Coulomb-blockade thermometers (CBTs), superconducting-insulator-normal-insulator-superconducting (SINIS) structures, and superconducting single-ele…
Josephson junctions and superconducting field effect transistors based on epitaxial Bi2Sr2Can-1CunO2(n+2) thin films
1998
Abstract Josephson junctions based on thin films of the Bi2Sr2Ca2Cu3O10+δ compound show IcRn products compatible with YBa2Cu3O7−δ samples. Using quasiparticle tunneling experiments we found evidence for a superconductor–insulator–superconductor tunneling process via localized states in the barrier. The Bi2Sr2CaCu2O8+δ compound is investigated regarding possible applications in superconducting field effect devices. We present thin films of four unit cells thickness that are superconducting at 58 K. An inverted metal–insulator–superconductor structure was prepared. From the modulation of the normal state resistance we estimate a carrier density of 7×1019 cm−3 for a superconducting sample. The…
Electric-field-controlled reversible order-disorder switching of a metal tip surface
2018
While it is well established that elevated temperatures can induce surface roughening of metal surfaces, the effect of a high electric field on the atomic structure at ambient temperature has not been investigated in detail. Here we show with atomic resolution using in situ transmission electron microscopy how intense electric fields induce reversible switching between perfect crystalline and disordered phases of gold surfaces at room temperature. Ab initio molecular dynamics simulations reveal that the mechanism behind the structural change can be attributed to a vanishing energy cost in forming surface defects in high electric fields. Our results demonstrate how surface processes can be d…
Layout influence on microwave performance of graphene field effect transistors
2018
The authors report on an in-depth statistical and parametrical investigation on the microwave performance of graphene FETs on sapphire substrate. The devices differ for the gate-drain/source distance and for the gate length, having kept instead the gate width constant. Microwave S -parameters have been measured for the different devices. Their results demonstrate that the cut-off frequency does not monotonically increase with the scaling of the device geometry and that it exists an optimal region in the gate-drain/source and gate-length space which maximises the microwave performance.
Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study
2019
In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al$_{2}$O$_{3}$), titanium oxide (TiO$_{2}$), and hafnium oxide (HfO$_{2}$) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging …
Comprehensive Modeling and Experimental Testing of Fault Detection and Management of a Nonredundant Fault-Tolerant VSI
2015
This paper presents an investigation and a comprehensive analysis on fault operations in a conventional three-phase voltage source inverter. After an introductory section dealing with power converter reliability and fault analysis issues in power electronics, a generalized switching function accounting for both healthy and faulty conditions and an easy and feasible method to embed fault diagnosis and reconfiguration within the control algorithm are introduced. The proposed system has simple and compact implementation. Experimental results operating both at open- and closed-loop current control, obtained using a test bench realized using a dSPACE system and the fault-tolerant inverter protot…
Polymorphism-Triggered Reversible Thermochromic Fluorescence of a simple 1,8-Naphthyridine
2013
The fluorescent behavior in the solid state of a naphthyridine-based donor–acceptor heterocycle is presented. Synthesized as a crystalline blue-emissive solid (Pbca), the compound can easily be transformed in its P21/c polymorphic form by heating. The latter material shows blue to cyan emission switching triggered by a reversible thermally induced phase transformation. This fact, the reversible acidochromism, and the strong anisotropic fluorescence of the compound in the solid state, account for the potential of 1,8-naphthyridines as simple and highly tunable organic compounds in materials science.
Biologically inspired information processing and synchronization in ensembles of non-identical threshold-potential nanostructures.
2013
Nanotechnology produces basic structures that show a significant variability in their individual physical properties. This experimental fact may constitute a serious limitation for most applications requiring nominally identical building blocks. On the other hand, biological diversity is found in most natural systems. We show that reliable information processing can be achieved with heterogeneous groups of non-identical nanostructures by using some conceptual schemes characteristic of biological networks (diversity, frequency-based signal processing, rate and rank order coding, and synchronization). To this end, we simulate the integrated response of an ensemble of single-electron transisto…
Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors
2022
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…