Search results for "Transistor"

Lumped parameter approach of nonlinear networks with transistors

1991

In this chapter we study the lumped parameter modelling of a large class of circuits composed of bipolar transistors, junction diodes and passive elements (resistors, capacitors, inductors). All these elements are nonlinear: the semiconductor components are modelled by “large signal” equivalent schemes, the capacitors and inductors have monotone characteristics while the resistors can be included in a multiport which also has a monotone description.

Optical flip-flop memory and routing operation based on polarization bistability in optical fiber

2014

A polarization bistability and hysteresis cycle phenomenon is demonstrated in optical fibers thanks to a counter-propagating four-wave mixing interaction. Based on this process, we successfully report the proof-of-principle of an optical flip-flop memory and a 10-Gbit/s routing operation.

Thickness identification of atomically thin InSe nanoflakes on SiO2/Si substrates by optical contrast analysis

2015

Abstract Single layers of chalcogenide semiconductors have demonstrated to exhibit tunable properties that can be exploited for new field-effect transistors and photonic devices. Among these semiconductors, indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. For its fundamental study and the development of practical applications, rapid and accurate identification methods of atomically thin nanosheets are essential. Here, we employ a transfer matrix approach to numerically calculate the optical contrast between thin InSe flakes and commonly used SiO2/Si substrates, which nicely re…

Thin-Film Transistors: Two-Step Solution-Processed Two-Component Bilayer Phthalocyaninato Copper-Based Heterojunctions with Interesting Ambipolar Org…

2016

Hysteresis in graphene nanoribbon field-effect devices

2020

Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the …

Ion-Selective Organic Electrochemical Transistors

2014

Ion-selective organic electrochemical transistors with sensitivity to potassium approaching 50 μA dec(-1) are demonstrated. The remarkable sensitivity arises from the use of high transconductance devices, where the conducting polymer is in direct contact with a reference gel electrolyte and integrated with an ion-selective membrane.

MATERIALS AND PROCESSING ISSUES FOR THE MANUFACTURING OF INTEGRATED PASSIVE AND ACTIVE DEVICES ON FLEXIBLE SUBSTRATES

2008

Plast_ICs is a Public/Private Laboratory funded by Italian Government aimed to build a novel technological platform for the development of flexible electronics, mainly, but not solely, based on thin inorganic films. Integration of different functions, on single and/or multiple plastic foils, to generate a smart system is the final goal of the project. The building blocks of the platform will be presented, starting from the different plastic substrates characterization, going through the development of active devices, such as thin-film- transistors, and passive devices, like thin-film- resistors, capacitors, inductors. Fully inorganic elementary devices, based on optical patterning and in va…

A Zone-Casting Technique for Device Fabrication of Field-Effect Transistors Based on Discotic Hexa-peri-hexabenzocoronene

2005

Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

2007

Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.

Thin Film Metal Oxides for Displays and Other Optoelectronic Applications

2020

Thin films of metal oxides have been extensively studied for various applications because of their durability, lower cost and lower toxicity, excellent chemical, magnetic, electrical and optical properties. A fusion of electrical and optical properties led to the growth of optoelectronic devices for a variety of applications including displays, light-emitting diodes, photovoltaic cells, photodetectors, optical storage, medicine, and so on. Optoelectronic devices have revolutionized our daily lives with their potentials in various aspects. An extensive research on materials for these devices has to be credited for the improvement in their performance over the years. Several metal oxide thin …