Search results for "Tunnelling"
showing 10 items of 218 documents
Transition from direct to Fowler-Nordheim tunneling in chemically reduced graphene oxide film.
2014
We investigate charge transport in a chemically reduced graphene oxide (RGO) film of sub-micron thickness. The I-V curve of RGO film shows current switching of the order of ∼10(5) above the threshold voltage. We found that the observed I-V curve is consistent with quantum tunnelling based charge transport. The quantum tunnelling based Simmons generalized theory was used to interpret the charge transport mechanism which shows that the current switching phenomenon is associated with transition from direct to Fowler-Nordheim (F-N) tunneling. The absence of current switching in the I-V curve after stripping away the oxygen functional groups from chemically RGO film confirms that the presence of…
Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction
2014
We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temperature. This result provides a sharp contrast to the magnetoresistance, which behaves oppositely for all barrier thicknesses and differs by one order of magnitude between devices. Here the magnetoresistance results from differences in transmission brought upon by changing the tunnel junction's mag…
Spintronics and Nanomemory Systems
2017
The chapter presents and explains the possibilities of CNT forest growth on Fe–Pt nanoparticles for the magnetic nanomemory. The magnetoresistance phenomena – giant magnetoresistance and tunnelling magnetoresistance (GMR and TMR) – for nanomemory devices are based on CNTs of various morphologies (i.e. various chiralities, diameters). It includes metal- and semiconductor-like CNTs which can be considered as alternative variants for electromagnetic nanosensoring and magnetic nanomemory. The chapter also presents simulations of Fe–Pt magnetically disordered nanodrops, as well as spin transport models.
Evidence of Band Bending Induced by Hole Trapping at MAPbI3 Perovskite / Metal Interface
2016
International audience; Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI3 has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI3 interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.
Roadmap on quantum nanotechnologies
2021
Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a …
Fabrication and characterization of small tunnel junctions through a thin dielectric membrane
1998
We show that a small tapered hole through a thin silicon nitride membrane provides a mask for tunnel junction structures. Our experiments imply, unlike in the conventional planar electron beam lithography, that tunnel junctions are well voltage biased in this structure with vanishingly small on-chip impedance. Our technique allows fabrication of double junctions, and even multijunction linear arrays, with small metallic islands in between.
Trianionic gold clusters
2001
Using Penning-trap experiments and a shell-correction method incorporating ellipsoidal shape deformations, we investigate the formation and stability patterns of trianionic gold clusters. Theory and ex- periment are in remarkable agreement concerning appearance sizes and electronic shell eects. In contrast to multiply cationic clusters, decay of the trianionic gold clusters occurs primarily via electron autodetach- ment and tunneling through a Coulomb barrier, rather than via ssion. PACS. 36.40.Wa Charged clusters { 36.40.Qv Stability and fragmentation of clusters { 36.40.Cg Electronic and magnetic properties of clusters
Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling
2018
Magnetic insulators are a key resource for next-generation spintronic and topological devices. The family of layered metal halides promises varied magnetic states, including ultrathin insulating multiferroics, spin liquids, and ferromagnets, but device-oriented characterization methods are needed to unlock their potential. Here, we report tunneling through the layered magnetic insulator CrI₃ as a function of temperature and applied magnetic field.We electrically detect the magnetic ground state and interlayer coupling and observe a fieldinducedmetamagnetic transition.The metamagnetic transition results in magnetoresistances of 95, 300, and 550% for bilayer, trilayer, and tetralayer CrI₃ bar…
Nano-lithography using a resist, patterned by electron exposure in an AFM configuration
1996
We have used a metallised force microscope tip to apply a voltage and thereby expose a very thin resist film. It is possible to image the film surface before, during and after the exposure, without interference with the process. Uniform resist films as thin as 10 nm are fabricated using the Langmuir-Blodgett technique. To orient the defined pattern and to make electrical connections a special larger scale alignment structure is first defined by conventional electron beam lithography, either directly in the Langmuir-Blodgett resist film or in a complete first process with a separate resist system. The results from the one resist process gave conducting 50 nm lines in a 60 A thick aluminium f…
The boron effect on low temperature luminescence of SrAl2O4:Eu, Dy
2020
V.V. acknowledges the financial support of ERDF PostDoc project No. 1.1.1.2/VIAA/3/19/440 (University of Latvia Institute of Solid State Physics, Latvia) and K.S., I.B., A.Z., D.M. and K.L. acknowledge the financial support of ERDF, European-Union Project No. 1.1.1.1/16/A/182 (University of Latvia Institute of Solid State Physics, Latvia).