Search results for "Vapour phase epitaxy"

Large Scale MOCVD Synthesis of Hollow ReS2 Nanoparticles with Nested Fullerene-Like Structure

2008

The synthesis of ReS2 onionlike nanoparticles by means of a high-temperature MOCVD process starting from Re2(CO)10 and elemental sulfur is reported. The reaction is carried out in a two-step proces...

Selective Synthesis of Hollow and Filled Fullerene-like (IF) WS2 Nanoparticles via Metal–Organic Chemical Vapor Deposition

2007

The synthesis of WS2 onion-like nanoparticles by means of a high-temperature metal–organic chemical vapor deposition (MOCVD) process starting from W(CO)6 and elemental sulfur is reported. The react...

ChemInform Abstract: Large Scale MOCVD Synthesis of Hollow ReS2Nanoparticles with Nested Fullerene-Like Structure.

2008

Study of TiO2 nanomembranes obtained by an induction heated MOCVD reactor

2015

Abstract Nanostructures of TiO2 were grown using the metal oxide chemical vapor deposition (MOCVD) technique. The procedure used induction heating on a graphite susceptor. This specific feature and the use of cobalt and ferrocene catalysts resulted in nanomembranes never obtained by common MOCVD reactors. The present study discusses the preparation of TiO2 nanomembranes and the dependence of nanomembrane structure and morphology on growth parameters.

Vapor phase epitaxy of Hg1−xCdxI2 on sapphire

1998

Abstract We demonstrate the possibility of growing Hg 1− x Cd x I 2 layers on sapphire substrates by vapor-phase epitaxy (VPE). The successful growth has been carried out using an α-HgI 2 polycrystalline source and a CdTe buffer layer grown on sapphire by metalorganic vapor phase epitaxy (MOVPE) before the Hg 1− x Cd x I 2 VPE growth. The Hg 1− x Cd x I 2 /sapphire 20–40 μm thick layers with a uniform composition in the range of x =0.2–0.6 were grown at 220–250°C for 70–300 h. The layers were studied by scanning electron microscopy, energy disperse X-ray analysis and X-ray diffractometry. Results on the layer characterization are reported and the effect of VPE conditions on the layer proper…

Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates

2003

Abstract The morphology and structure of CdTe(1 1 1) layers grown on GaAs(1 0 0) by MOCVD have been studied by atomic force microscopy (AFM) and X-ray texture analysis. Growth conditions have been chosen so that mirror-like CdTe layers are obtained. Layers whose growth times vary between 10 s and 2 h have been investigated. The X-ray texture analysis shows that the CdTe layers grown on GaAs substrates that were thermally treated at 580°C for 30 min in a H 2 atmosphere exhibit a (1 1 1) preferential orientation and are twinned. This twinned structure of the (1 1 1)CdTe layer which is observed as 60° rotated triangular crystallites in the AFM images strongly influences the surface morphology.…

Structural characterization of CdTe layers grown on (0001) sapphire by MOCVD

2004

Abstract We report on the growth of CdTe layers directly onto (0 0 0 1) sapphire substrates by MOCVD. The structure and morphology of the layers have been investigated as a function of growth temperature and II/VI precursor molar ratio by X-ray diffraction and scanning electron microscopy. The texture of the samples has revealed the existence of a temperature threshold, with higher growth temperatures resulting on completely (1 1 1) oriented layers. Some of these layers contained microtwins, as indicated by the extra peaks in the {4 2 2} Φ scans, leading to the existence of two different domains. The structural quality of each domain, as well as of the sample as a whole, has been determined…

Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire

1997

Selective area (SA) Hg1 − xCdxTesapphire layers have been grown using the recently developed technique of the vapor-phase epitaxy (VPE) of Hg1 − xCdxTe layers on CdTesapphire heteroepitaxial substrates (HS), which we have called “VPE on HS technique” (Sochinskii et al., J. Crystal Growth 149 (1995) 35; 161 (1996) 195). First, planar CdTe (1 1 1) 5–7 μm thick layers were grown on sapphire (0 0 0 1) wafers by metalorganic vapor-phase epitaxy (MOVPE) at 340°C for 1–2.5 h using dimethylcadmium and di-isopropyltellurium as precursors. Second, CdTe/sapphire mesas were formed using standard photolithography in the form of alternating parallel linear arrays consisting of 500 × 70 μm2 elements. Thir…

Some aspects of the MOCVD growth of ZnO on sapphire using tert-butanol

2002

The growth of ZnO on (0001) sapphire substrates using metalorganic chemical vapor deposition is reported. Diethylzinc and tertiarybutanol were used, respectively, as zinc and oxygen sources. Growth conditions are detailed such as the substrate temperature and the precursors partial pressures. The influence of the cleanness state of the MOCVD silica reactor is emphasized, since it modifies both layer quality and crystalline orientation, and since it also affects growth process steps like sapphire thermal treatment and buffer layer deposition. ZnO epitaxial layers are characterised by scanning electron microscopy (SEM) to assess the surface orientation and morphology, X-ray diffraction (XRD) …

Metallic interconnects for solid oxide fuel cell: Effect of water vapour on oxidation resistance of differently coated alloys

2009

International audience; The need of interconnect to separate fuel and oxidant gasses and connect individual cells into electrical series in a SOFC stack appears as one of the most important point in fuel cell technology. Due to their high electrical and thermal conductivities, thermal expansion compatibility with the other cell components and lowcost, ferritic stainless steels (FSS) are nowconsidered to be among the most promising candidate materials as interconnects in SOFC stacks. Despite the formation at 800 ◦C of a protective chromia Cr2O3 scale, it can transform in volatile chromium species, leading to the lost of its protectiveness and then the degradation of the fuel cell. A previous…