Search results for "Volatile memory"

showing 3 items of 23 documents

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

2018

International audience; This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

Nuclear and High Energy PhysicsComputer sciencekäyttömuistit02 engineering and technologysingle-event effect01 natural sciencesMemory arrayElectronic mailX-ray0103 physical sciencesElectronic engineering[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsElectrical and Electronic Engineeringstatic testComputingMilieux_MISCELLANEOUSdynamic testEvent (probability theory)Random access memoryta114ta213010308 nuclear & particles physicsbusiness.industrySEFImuistit (tietotekniikka)021001 nanoscience & nanotechnologyFerroelectricityheavy ionsingle-event upsetNon-volatile memoryFRAMsäteilyfysiikkaNuclear Energy and EngineeringSingle event upsetPhotonics0210 nano-technologybusinessIEEE Transactions on Nuclear Science
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Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation

2012

Threshold voltage (V-th) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (gamma-and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to V-th variation and that the V-th loss and the variability can be modeled by a Weibull statistics with a shape parameter k similar to 2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the V-th loss distributio…

Materials sciencePhotonbusiness.industryoxide-nitride-oxide (ONO)radiation hardnessFlash memoriesShape parameterElectronic Optical and Magnetic MaterialsThreshold voltageIonizing radiationNon-volatile memoryFlash memories nitride read-only memories (NROMs) oxide–nitride–oxide (ONO) radiation hardness.nitride read-only memories (NROMs)OptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardeningWeibull distribution
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Radiation tolerance of NROM embedded products

2010

Radiation tolerance of NROM memories is demonstrated at the level of industrial 4 Mbit memory embedded modules, specifically not designed for operation in radiation harsh environments. The memory fabricated in 0.18 um technology remains fully functional after total ionization doses exceeding 100 krad. The tests were performed by irradiating with γ-rays (60Co source) and 10 MeV 11B ions in active (during programming/erase and read-out) and passive (no bias) modes. Comprehensive statistics were obtained by using large memory arrays and comparison of the data with the parameters of irradiated single cells allowed deep understanding of the physical phenomena in the irradiated NROM devices for b…

Nuclear and High Energy PhysicsMaterials scienceONOradiation effectbusiness.industryFloating gate memorieRadiationSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materialaw.inventionNon-volatile memoryCapacitorRadiation toleranceNuclear Energy and EngineeringlawLogic gatePhysical phenomenaOptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardeningradiation hardening
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