Search results for "WAF"
showing 10 items of 85 documents
UV-induced Degradation Study of Multicrystalline Silicon Solar Cells Made from Different Silicon Materials
2013
Abstract The effect of ultraviolet-induced degradation (UV-ID) on solar cells made from two different solar grade materials has been compared. By using identical wafer and cell production units, effects originating in the two materials; solar grade produced by the Elkem Solar method (ESS™) was compared to standard polysilicon solar cells. Silicon wafers were selected precisely from similar positions from respective silicon bricks to process identical standard solar cells. The quantum efficiency maps at particular laser wavelengths and IV parameters of all solar cells were measured before and after UV-ID to visualize defects sites in the solar cells and to observe the extent of degradation. …
Formation of cobalt silicide films by ion beam deposition
2006
Abstract Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si(1 1 1) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 °C for 30 min. The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 °C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.
Structural changes and distribution of accumulated tritium in the carbon based JET tiles
2011
Abstract In this study the tritium distribution and the effect of structural changes thereon have been analyzed in the bulk of the tile selected from the JET Mark II SRP divertor. Tritium content has been analyzed by the full combustion technique [1] . The structure has been investigated by the method of Scanning Electron Microscopy. Tritium depth profiles have been measured at different poloidal positions. A high specific activity of tritium (up to 156 MBq g −1 ) was found at the plasma-facing surface. At some tile positions up to 98–99% of the T can be in the surface slice of 1 mm thickness, whereas in other poloidal positions there can be more T in the bulk than at the surface. The struc…
Studies for low mass, large area monolithic silicon pixel detector modules using the MALTA CMOS pixel chip
2021
Abstract The MALTA monolithic silicon pixel sensors have been used to study dicing and thinning of monolithic silicon pixel detectors for large area and low mass modules. Dicing as close as possible to the active circuitry will allow to build modules with very narrow inactive regions between the sensors. Inactive edge regions of less than 5 μ m to the electronic circuitry could be achieved for 100 μ m thick sensors. The MALTA chip (Cardella et al., 2019) also offers the possibility to transfer data and power directly from chip to chip. Tests have been carried out connecting two MALTA chips directly using ultrasonic wedge wire bonding. Results from lab tests show that the data accumulated in…
Photon reconstruction in the ATLAS Inner Detector and Liquid Argon Barrel Calorimeter at the 2004 Combined Test Beam
2011
The reconstruction of photons in the ATLAS detector is studied with data taken during the 2004 Combined Test Beam, where a full slice of the ATLAS detector was exposed to beams of particles of known energy at the CERN SPS. The results presented show significant differences in the longitudinal development of the electromagnetic shower between converted and unconverted photons as well as in the total measured energy. The potential to use the reconstructed converted photons as a means to precisely map the material of the tracker in front of the electromagnetic calorimeter is also considered. All results obtained are compared with a detailed Monte-Carlo simulation of the test-beam setup which i…
First results from electrical qualification measurements on DEPFET pixel detector
2010
We report on the first results from a new setup for electrical qualification measurements of DEPFET pixel detector matrices. In order to measure the transistor properties of all pixels, the DEPFET device is placed into a benchtest setup and electrically contacted via a probecard. Using a switch matrix, each pixel of the detector array can be addressed individually for characterization. These measurements facilitate to pre-select the best DEPFET matrices as detector device prior to the mounting of the matrix and allow to investigate topics like the homogeneity of transistor parameters on device, wafer and batch level in order to learn about the stability and reproducibility of the production…
Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon
2004
Abstract We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kΩ cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6×1014 and 8.5×1013 cm−2 for detectors, and up to 5.0×1014 cm−3 for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials.
Particle detectors made of high-resistivity Czochralski silicon
2005
We have processed pin-diodes and strip detectors on n- and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 O cm and 1.9 kO cm for n- and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low- and high-energy protons, neutrons, g-rays, lithium ions and electrons. Cz-Si was found to be more…
A prototype of very high resolution small animal PET scanner using silicon pad detectors
2007
Abstract A very high-resolution small animal positron emission tomograph (PET), which can achieve sub-millimeter spatial resolution, is being developed using silicon pad detectors. The prototype PET for a single slice instrument consists of two 1 mm thick silicon pad detectors, each containing a 32×16 array of 1.4×1.4 mm pads readout with four VATAGP3 chips which have 128 channels low-noise self-triggering ASIC in each chip, coincidence units, a source turntable and tungsten slice collimator. The silicon detectors were located edgewise on opposite sides of a 4 cm field-of-view to maximize efficiency. Energy resolution is dominated by electronic noise, which is 0.98% (1.38 keV) FWHM at 140.5…
Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis
2010
Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phas…