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RESEARCH PRODUCT
Formation of cobalt silicide films by ion beam deposition
David E. MccreadyYanwen ZhangJames S. YoungMathew I. MckinleyHarry J. WhitlowGöran PossnertChong M. WangAlenka RazpetYuguang WuTonghe Zhangsubject
Nuclear and High Energy PhysicsIon beam analysisMaterials scienceAnnealing (metallurgy)business.industryMetallurgyVacuum arcchemistry.chemical_compoundIon beam depositionchemistrySilicideOptoelectronicsWaferSurface layerThin filmbusinessInstrumentationdescription
Abstract Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si(1 1 1) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700 °C for 30 min. The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700 °C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2006-01-01 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |