Search results for "Width"

showing 10 items of 690 documents

Dispersion managed self-similar parabolic pulses

2008

International audience; We describe the propagation of a parabolic self-similar pulse in an anomalous dispersive nonlinear fibre. Given the capacity of a linearly chirped parabolic pulse to retain its typical shape over a short propagation distance, we introduce the concept of dispersion managed self-similar pulses and outline potential benefits in terms of spectral broadening enhancement.

Materials scienceOptical fiber02 engineering and technology01 natural scienceslaw.invention010309 optics020210 optoelectronics & photonicsOpticslawOptical materials0103 physical sciences0202 electrical engineering electronic engineering information engineering[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics][ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics]Parabolic pulsesbusiness.industryNonlinear fibreAtomic and Molecular Physics and OpticsPulse propagationPulse (physics)Nonlinear systemDispersion managedNonlinear propagationbusinessBandwidth-limited pulseDoppler broadeningJournal of Optics A: Pure and Applied Optics
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Improved All-Fiber Acousto-Optic Tunable Bandpass Filter

2017

An all-fiber acousto-optic tunable bandpass filter based on a 1.185-mm long coreless core mode blocker is reported. Experimental results demonstrate a minimal insertion loss of 1.2 dB at the optical resonant wavelength of 1527.7 nm with 3-dB optical bandwidth of 0.83 nm. The optimization of the device takes into account the attenuation of the acoustic wave and leads to an asymmetric configuration in which the coupling section is shorter than the recoupling part. Under the effect of a standing flexural wave the device can be operated as a bandpass modulator. The device exhibits a maximum modulation depth of 28%, 4 dB of insertion loss and 0.97 nm of optical bandwidth at 4.774 MHz.

Materials scienceOptical fiber02 engineering and technology01 natural scienceslaw.invention010309 opticsAmplitude modulationOpticsBand-pass filterlaw0103 physical sciencesInsertion lossOptical fibersElectrical and Electronic EngineeringModulationbusiness.industryAttenuationBandwidth (signal processing)021001 nanoscience & nanotechnologyUNESCO::FÍSICA::Óptica ::Fibras ópticasAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsWavelengthAcoustic waves:FÍSICA::Óptica ::Fibras ópticas [UNESCO]ModulationCouplings0210 nano-technologybusinessOptical attenuatorsIEEE Photonics Technology Letters
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Wavelength conversion from 1.3 µm to 1.5 µm in single-mode optical fibres using Raman-assisted three-wave mixing

2000

International audience; We theoretically analyse the achievement of wide-range all-optical wavelength conversion of a 1.31 µm signal to an idler wave in the 1.5 µm spectral region by Raman-assisted three-wave mixing in single-mode optical fibres. Raman-assisted three-wave mixing allows efficient conversion on a large frequency detuning bandwidth while alleviating the need for stringent phase-matching conditions.

Materials scienceOptical fiber[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonicbusiness.industryBandwidth (signal processing)Single-mode optical fiberPhysics::Optics02 engineering and technologyWavelength conversion01 natural sciencesAtomic and Molecular Physics and Opticslaw.invention010309 opticssymbols.namesake020210 optoelectronics & photonicsOpticslaw0103 physical sciences0202 electrical engineering electronic engineering information engineeringsymbols[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic[ SPI.OPTI ] Engineering Sciences [physics]/Optics / PhotonicbusinessRaman spectroscopy
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Optical absorption and electron paramagnetic resonance of theEα′center in amorphous silicon dioxide

2008

We report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the E{sub {alpha}}{sup '} point defect in amorphous silicon dioxide (a-SiO{sub 2}). This defect has been studied in {beta}-ray irradiated and thermally treated oxygen-deficient a-SiO{sub 2} materials. Our results have pointed out that the E{sub {alpha}}{sup '} center is responsible for an OA Gaussian band peaked at {approx}5.8 eV and having a full width at half maximum of {approx}0.6 eV. The estimated oscillator strength of the related electronic transition is {approx}0.14. Furthermore, we have found that this OA band is quite similar to that of the E{sub {gamma}}{sup '} center in…

Materials scienceOscillator strengthCenter (category theory)Condensed Matter PhysicsCrystallographic defectMolecular electronic transitionElectronic Optical and Magnetic Materialslaw.inventionFull width at half maximumParamagnetismCrystallographylawAbsorption (logic)Atomic physicsElectron paramagnetic resonancePhysical Review B
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Raman scattering inβ-ZnS

2004

The first- and second-order Raman spectra of cubic ZnS $(\ensuremath{\beta}$-ZnS, zinc-blende) are revisited. We consider spectra measured with two laser lines for samples with different isotopic compositions, aiming at a definitive assignment of the observed Raman features and the mechanisms which determine the linewidth of the first order TO and LO Raman phonons. For this purpose, the dependence of the observed spectra on temperature and pressure is investigated. The linewidth of the TO phonons is found to vary strongly with pressure and isotopic masses. Pressure runs, up to 15 GPa, were performed at 16 K and 300 K. Whereas well-defined TO Raman phonons were observed at low temperature in…

Materials sciencePhononResonanceCondensed Matter PhysicsLaserMolecular physicsSpectral lineElectronic Optical and Magnetic Materialslaw.inventionCondensed Matter::Materials Sciencesymbols.namesakeLaser linewidthNuclear magnetic resonancelawsymbolsRaman spectroscopyRaman scatteringLine (formation)Physical Review B
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Highly phosphorescent perfect green emitting iridium(iii) complex for application in OLEDs.

2007

A novel iridium complex, [bis-(2-phenylpyridine)(2-carboxy-4-dimethylaminopyridine)iridium(III)] (N984), was synthesized and characterized using spectroscopic and electrochemical methods; a solution processable OLED device incorporating the N984 complex displays electroluminescence spectra with a narrow bandwidth of 70 nm at half of its intensity, with colour coordinates of x = 0.322; y = 0.529 that are very close to those suggested by the PAL standard for a green emitter. Bolink, Henk, Henk.Bolink@uv.es ; Coronado Miralles, Eugenio, Eugenio.Coronado@uv.es ; Garcia Santamaria, Sonsoles Amor, Sonsoles.Garcia@uv.es

Materials sciencePhosforescenseUNESCO::QUÍMICAchemistry.chemical_elementNanotechnologyIridiumElectrochemistry:QUÍMICA [UNESCO]CatalysisNarrow bandwidthSpectrostopic methodElectrochemical methodMaterials ChemistryOLEDIridiumElectroluminescence spectraCommon emitterbusiness.industryUNESCO::QUÍMICA::Química analíticaMetals and AlloysGeneral ChemistryPhosforescense ; Green ; Iridium ; OLED ; Spectrostopic method ; Electrochemical methodSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsOLEDchemistryGreen:QUÍMICA::Química analítica [UNESCO]Ceramics and CompositesOptoelectronicsbusinessPhosphorescenceChemical communications (Cambridge, England)
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The controlled growth of GaN microrods on Si(111) substrates by MOCVD

2015

Abstract In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiN x /Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 ¯ 1 } planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm −1 ) with crystal quality comparable to bu…

Materials sciencePhotoluminescenceScanning electron microscopebusiness.industryNanotechnologyChemical vapor depositionCondensed Matter PhysicsSilaneInorganic ChemistryCrystalFull width at half maximumsymbols.namesakechemistry.chemical_compoundchemistryMaterials ChemistrysymbolsOptoelectronicsMetalorganic vapour phase epitaxybusinessRaman spectroscopyJournal of Crystal Growth
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Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition

2013

We report on ZnO epitaxial growth by pulsed-laser deposition (PLD) on different substrates, such as quartz, sapphire, and GaN template. Approximately 1 mu m-thick films were grown under different substrate temperatures and background oxygen conditions. X-ray diffraction analysis indicated preferential growth along the c-axis direction with a full-width at half maximum(FWHM) of the rocking curve as narrow as 230 arcs in the case of the GaN template. Low-temperature photoluminescence showed A-excitonic emission near 3.36 eV and a FWHM of (DXA)-X-0 emission as small as 2.89 meV at 9 K. Atomic force microscope measurements showed that roughness as low as 18 nm could be obtained. These results p…

Materials sciencePhotoluminescenceStructural propertiesbusiness.industryMetals and AlloysPulsed laser depositionSurfaces and InterfacesSubstrate (electronics)EpitaxySettore ING-INF/01 - ElettronicaSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsPulsed laser depositionFull width at half maximumCrystallinityOpticsSurface roughnessZinc oxidePulsed laser deposition Zinc oxide Photoluminescence Structural properties Surface roughness.Materials ChemistrySapphireOptoelectronicsLuminescencebusinessPhotoluminescence
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Dual-broadband rotational CARS modelling of nitrogen at pressures up to 9 MPa. II. Rotational Raman line widths

2002

International audience; Rotational coherent anti-Stokes Raman spectroscopy (CARS) is a well-established spectroscopic technique for thermometry at pre-combustion temperatures an atmospheric pressure. However, at pressures of several MPa, a previous investigation revealed large discrepancies between experimental data and the theoretical model. A re-evaluation has been made of these data (at room temperature and in the range 1.5-9 MPa) with two improvements to the spectral code. The first is the inclusion of an inter-branch interference effect, which is described in detail in Paper I. The second is the use of experimental S-1-branch Raman line widths measured at 295 K, with a temperature depe…

Materials sciencePhysics and Astronomy (miscellaneous)General Physics and AstronomyRotational transitionchemistry.chemical_element02 engineering and technology01 natural sciencesMolecular physicsQ-BRANCH010309 opticsRaman linesymbols.namesakeNuclear magnetic resonanceMaschinenbau0103 physical sciencesBroadbandSCATTERING THERMOMETRYSPECTRAQuantum optics[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics][ PHYS.PHYS.PHYS-OPTICS ] Physics [physics]/Physics [physics]/Optics [physics.optics]Atmospheric pressureRANGEGeneral Engineering021001 nanoscience & nanotechnologyNitrogenDiatomic moleculeSPECTROSCOPY CARSN-2COchemistrysymbolsHIGH-TEMPERATURELINEWIDTHS0210 nano-technologyRaman spectroscopyCOEFFICIENTS
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Antenna-coupled spintronic terahertz emitters driven by a 1550 nm femtosecond laser oscillator

2019

We demonstrate antenna-coupled spintronic terahertz (THz) emitters excited by 1550 nm, 90 fs laser pulses. Antennas are employed to optimize THz outcoupling and frequency coverage of ferromagnetic/nonmagnetic metallic spintronic structures. We directly compare the antenna-coupled devices to those without antennas. Using a 200 μm H-dipole antenna and an ErAs:InGaAs photoconductive receiver, we obtain a 2.42-fold larger THz peak-peak signal, a bandwidth of 4.5 THz, and an increase in the peak dynamic range (DNR) from 53 dB to 65 dB. A 25 μm slotline antenna offered 5 dB larger peak DNR and a bandwidth of 5 THz. For all measurements, we use a comparatively low laser power of 45 mW from a comme…

Materials sciencePhysics and Astronomy (miscellaneous)Terahertz radiation02 engineering and technology01 natural sciences530law.inventionlawantenna-coupled spintronic terahertz emitterslaser oscillator0103 physical sciencesLaser power scaling010302 applied physicsSpintronicsbusiness.industryDynamic rangePhotoconductivityBandwidth (signal processing)500 Naturwissenschaften und Mathematik::530 Physik::530 Physik021001 nanoscience & nanotechnologyLaserFemtosecondOptoelectronicsterahertz emitters0210 nano-technologybusiness
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