Search results for "X-ray Raman scattering"

Electronic and acoustic-phonon inter-Landau-level Raman scattering in GaAs/AlxGa1−xAs multiple quantum wells

1995

We present an experimental study of inter-Landau-level excitations in undoped GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As multiple quantum wells in high magnetic fields by means of Raman scattering. The experiments were performed in Faraday backscattering geometry with the field along the growth axis, using circularly polarized light for resonant excitation of low-index magneto-optical transitions between Landau levels. We observe two types of peaks. One of them, present in both Stokes and anti-Stokes regions at a constant Raman shift, corresponds to the electron cyclotron energy. We attribute it to electronic Raman scattering from a quasistationa…

Elastic light scattering from semiconductor structures: Localized versus propagating intermediate electronic excitations

1995

We present a theoretical study of the relative role of localized and propagating intermediate electronic states in the processes of elastic scattering of light. Only localized excitations lead to isotropic scattering in lowest-order perturbation theory. Inhomogeneous broadening of the optical transition affects the scattering efficiency from the ordered and disordered array of localized states in a qualitatively different way. The propagating electronic excitations may only contribute to elastic light scattering via higher-order processes. The scattering of excitons by impurities or the interface roughness potential is suggested as a mechanism for the contribution of propagating excitations…

Angular and polarization dependence of Compton scattering from in the Δ-resonance region

1998

Abstract Using linearly polarized tagged photons from coherent bremsstrahlung, differential cross sections and beam asymmetries for Compton scattering by 4 He have been measured at MAMI in the energy interval between 150 MeV and 500 MeV for scattering angles of θ γ lab =37°, 93° and 137°, thus largely increasing the available data base. Improved calculations in terms of the Δ -hole model completely fail to describe the data at large scattering angles. The same proved to be true for a schematic model, even after taking into account properties of nuclear photo-absorption in very detail.

Model-independent DWBA-analysis of inelastic electron scattering data

2008

Resonant hyper-Raman scattering in semiconductors

1998

A theoretical model for resonant hyper-Raman scattering by LO phonons is developed, taking into account excitonic effects. The model is valid for energies below and above an allowed absorption edge. The matrix elements corresponding to the exciton-photon and exciton-phonon interactions are derived analytically, and their contributions to the total scattering efficiency are analyzed. The two main electron-phonon interaction mechanisms present in polar semiconductors, deformation potential, and Fr\"ohlich interaction, are considered. It is shown that the one-phonon resonance hyper-Raman scattering mediated by the deformation potential interaction is dipole forbidden, whereas it is allowed whe…

Role of excitons in double Raman resonances in GaAs quantum wells

1996

Raman scattering by longitudinal-optical phonons has been measured in GaAs-AlAs multiple quantum wells at high magnetic fields. Doubly resonant scattering processes are observed at photon energies corresponding to magneto-excitons with different principal quantum numbers for the incoming and outgoing channels. The existence of these initially forbidden scattering processes, their resonance energies, and their relative intensities are correctly reproduced by our theoretical description. The model takes into account the excitonic nature of the intermediate states, as well as scattering processes involving a nonzero in-plane phonon wave vector, which is required to allow inter-Landau level sca…

Compton scattering off nucleons near threshold

2008

The energy dependence of the magnetic polarizability β has been evaluated by use of the delta resonance in the s- and u-channel of the Compton scattering amplitude. It was the idea to extract the influence of higher order terms (higher than ω2, ω = |k| being the photon energy) in the analysis of the polarizability. The static paramagnetic polarizability βPara(0) has been substituted by an energy dependent βδPara(k) and the result is compared with experimental data.

Electric-field-induced Raman scattering in GaAs: Franz-Keldysh oscillations

1995

We have studied the influence of strong electric fields on the Raman scattering intensity from LO phonons in GaAs (100) at room temperature using laser excitation energies above the fundamental ${\mathit{E}}_{0}$ gap. Striking oscillations are found in the scattering intensity for configurations where either the deformation potential or Fr\"ohlich electron-phonon interaction contribute. The oscillations in the deformation-potential-mediated scattering intensity can be related to Franz-Keldysh oscillations derived from the ${\mathit{E}}_{0}$ gap, whereas a more complicated mechanism has to be invoked for processes where Fr\"ohlich interaction is responsible.

Second-order Raman scattering in CuO

2013

Polarized second-order Raman scattering spectra of CuO single crystals are reported. It is shown that for some scattering geometries the second-order processes dominate the inelastic light scattering spectra. Group-theoretical symmetry analysis of the selection rules for the first- and second-order scattering processes is performed and phonon dispersion relations are calculated within density functional theory. The main spectral features of the two-phonon spectra are assigned to overtones of the vibrational branches at various special points across the Brillouin zone.

Inelastic neutron and low-frequency Raman scattering in a niobium-phosphate glass for Raman gain applications

2011

Abstract We present measurements of the vibrational spectrum of a binary niobium-phosphate glass in the THz frequency range using inelastic neutron and Raman scattering. The spectra of these glasses show a low-frequency enhancement of the vibrational density of states (“boson peak”). Using a recently developed theory of vibrational excitations in disordered solids we are able to reconcile the measured neutron and Raman spectra using fluctuating elastic and Pockels constants as a model concept. As the spontaneous Raman susceptibility is a key parameter for Raman amplification our results suggest a significant gain profile for application of niobium-phosphate glasses in Raman amplifiers.