Search results for "bandgap"
showing 8 items of 58 documents
Natural optical anisotropy of h-BN: Highest giant birefringence in a bulk crystal through the mid-infrared to ultraviolet range
2018
The giant birefringence of layered h-BN was demonstrated by analyzing the interference patterns in reflectance and transmittance measurements in the mid-infrared to the deep ultraviolet energy range. The refractive index for polarization perpendicular to the c axis is much higher than the refractive index for polarization parallel to the c axis, and it displays a strong increase in the ultraviolet range that is attributed to the huge excitonic effects arising from the unique electronic structure of h-BN. Thus, h-BN is shown to exhibit a giant negative birefringence that ranges from -0.7 in the visible to -2 in the deep ultraviolet close to the band gap. The electronic dielectric constants f…
Simulation of parasitic effects on Silicon Carbide devices for automotive electric traction
2020
Wide Band Gap (WBG) semiconductors are increasingly addressed towards Electric Vehicle (EV) applications, due to their significant advantages in terms of high-voltage and low-losses performances, suitable for high power applications. Nevertheless, the packaging in WBG devices represents a challenge for designers due to the notable impact that inductive and capacitive parasitic components can bring in high switching frequency regime in terms of noise and power losses. In this paper, a comparison between conventional Silicon (Si) and emerging Silicon-Carbide (SiC) power switching devices is presented. The effects of inductive parasitic effects and switching frequency are investigated in simul…
Fully Vacuum-Processed Wide Band Gap Mixed-Halide Perovskite Solar Cells
2017
Methylammonium lead mixed-halide perovskites MAPb(BrxI1–x)3 are promising materials for the preparation of tandem devices. When exposed to light, MAPb(BrxI1–x)3 segregates in iodide- and bromide-rich phases, limiting the achievable photovoltage and hence the attainable device efficiency. To date only solution-processed mixed-halide perovskites have been demonstrated. We present fully vacuum-deposited mixed-halide perovskite thin films with band gap of 1.72 and 1.87 eV, prepared by controlling the deposition rates of the different halide precursors. When used in thin-film devices, these materials lead to power conversion efficiencies of 15.9 and 10.5%, respectively, which are among the highe…
Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications
2009
Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector…
Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications
2016
An architectural performance comparison of bandgap voltage reference variants, designed in a $0.18~\mu \text {m}$ CMOS process, is performed with respect to single event transients. These are commonly induced in microelectronics in the space radiation environment. Heavy ion tests (Silicon, Krypton, Xenon) are used to explore the analog single-event transients and have revealed pulse quenching mechanisms in analogue circuits. The different topologies are compared, in terms of cross-section, pulse duration and pulse amplitude. The measured results, and the explanations behind the findings, reveal important guidelines for designing analog integrated circuits, which are intended for space appli…
Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
2018
The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The…
Strongly Coupled Coherent Phonons in Single-Layer MoS 2
2019
We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by…
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
2020
The suitability of Ti as a band gap modifier for &alpha