Search results for "chemical vapor deposition"
showing 10 items of 199 documents
In Situ Heating TEM Study of Onion-like WS2 and MoS2 Nanostructures Obtained via MOCVD
2007
We report on the in situ heating transmission electron microscopy (TEM) study of WS2 and MoS2 nanoparticles obtained from metal–organic chemical vapor deposition (MOCVD). The general behavior of MoS2 and WS2 is similar: Round, amorphous particles in the pristine sample transform to hollow, onion-like particles upon annealing. A second type of particle with straight layers exhibits only minor changes. A significant difference between both compounds could be demonstrated in their crystallization behavior. The results of the in situ heating experiments are compared to those obtained from an ex situ annealing process under Ar.
Characterization of optogeometric parameters of optical fibers by near-field scanning probe microscopies
2000
The combination of atomic-force and scanning-near-field optical microscopies is useful for characterizing the physical and optical parameters of optoelectronic devices. With a commercial atomic-force microscope adapted to perform scanning-near-field optical measurements, we succeed in determining core diameters, localizing the erbium doping zone, and analyzing propagation modes in erbium-doped and multimodal optical fibers.
HCl gas gettering for crystalline silicon thin film solar cells
2011
Crystalline silicon thin film (cSiTF) solar cells could be an attractive alternative for standard silicon solar cells. Only a small amount of the expensive high purity silicon is needed for the epitaxial deposition on a low-cost silicon substrate made from e.g. metallurgical grade (MG) or upgraded metallurgical grade (UMG) silicon. The resulting product is called epitaxial wafer equivalent (EpiWE) because it can be processed in a standard wafer cell production. MG-Si and UMG-Si still contain a huge amount of metallic impurities. These impurities have to be removed by gettering methods in order to prevent diffusion into the highly pure active silicon layer during the high-temperature deposit…
Luminescence of unfused 95%SiO2–5%GeO2 amorphous films with fluorine additive: No evidence for presence of GeODC(I) defects found
2013
Abstract Photoluminescence (PL) of unfused amorphous germanosilicate films with fluorine additive is studied in 2–8.5 eV spectral range. Experiments are based on films deposited on silica substrates by means of the surface-plasma chemical vapor deposition (SPCVD). Films of about 100 μm in thickness with “high F” (~ 4.2 wt.%) and “low F” (~ 0.5 wt.%) fluorine content have been fabricated for the experiments. KrF (248 nm), ArF (193 nm) and F2 (157 nm) excimer lasers are used to pump PL. It is found that absorption and luminescence associated with germanium oxygen deficient centers (GeODCs) in “high F” and “low F” films differ. In the “high F” unfused film absorption coefficient of the band at…
The controlled growth of GaN microrods on Si(111) substrates by MOCVD
2015
Abstract In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiN x /Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 ¯ 1 } planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm −1 ) with crystal quality comparable to bu…
Absorption and luminescence in amorphous SixGe1-xO2 films fabricated by SPCVD
2012
Abstract Optical absorption and photoluminescence of Ge-doped silica films fabricated by the surface-plasma chemical vapor deposition (SPCVD) are studied in the 2–8 eV spectral band. The deposited on silica substrate films of about 10 μm in thickness are composed as x·GeO2-(1-x)·SiO2 with x ranging from 0.02 to 1. It is found that all as‐deposited films do not luminesce under the excitation by a KrF (5 eV) excimer laser, thus indicating lack of oxygen deficient centers (ODCs) in them. After subsequent fusion of silicon containing (x
A perpendicular graphene/ferromagnet electrode for spintronics
2020
We report on the large-scale integration of graphene layers over a FePd perpendicular magnetic anisotropy (PMA) platform, targeting further downscaling of spin circuits. An L10 FePd ordered alloy showing both high magneto-crystalline anisotropy and a low magnetic damping constant, is deposited by magnetron sputtering. The graphene layer is then grown on top of it by large-scale chemical vapor deposition. A step-by-step study, including structural and magnetic analyses by x-ray diffraction and Kerr microscopy, shows that the measured FePd properties are preserved after the graphene deposition process. This scheme provides a graphene protected perpendicular spin electrode showing resistance t…
Nanocrystal MOS memories obtained by LPCVD deposition of Si nanograins
2001
We have realized silicon quantum dots embedded in SiO2 which act as nano-floating gates of MOS memories. The dots with nanometer sizes have been deposited by LPCVD on a 3nm tunnel oxide. Two processes at a fixed pressure have been explored by varying the temperature. SiH4 with a N2 carrier gas have been used in the former case, SiH4 and H2 have been used in the latter. In both cases a nanocrystalline silicon layer is obtained, with nanocrystals a density higher than 1011 cm-2. The process with H2 carrier gas is more controllable and leads to the formation of nanocrystals with a more regular shape. In both cases the density of grains is able to originate detectable threshold shifts in the me…
Influence of ZnO/graphene nanolaminate periodicity on their structural and mechanical properties
2018
International audience; Structural, electronic and mechanical properties of ZnO/Graphene (ZnO/G) nanolaminates fabricated by low temperature atomic layer deposition (ALD) and chemical vapor deposition (CVD) were investigated. We performed scanning and transmission electron microscopy (SEM/TEM), X-ray diffraction (XRD), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-Ray photoelectron spectroscopy (XPS) and nanoindentation to characterize the ZnO/G nanolaminates. The main structural and mechanical parameters of ZnO/G nanolaminates were calculated. The obtained results were analyzed and interpreted taking into account mechanical interaction and charge effects occurring at the …
Phase mixture in MOCVD and reactive sputtering TiOxNy thin films revealed and quantified by XPS factorial analysis.
2006
Abstract Titanium oxynitride thin films have been deposited by low-pressure metalorganic chemical vapour deposition and reactive sputtering. The growth temperature for chemical vapour-deposited films and water vapour partial pressure for sputter-deposited films have been used to modulate the chemical composition. Both series have been analysed using X-ray photoelectron spectroscopy (XPS) in order to describe the structure of the materials using a factorial analysis approach. Titanium and metalloid concentrations have also been determined and compared to an elemental analysis performed using Rutherford backscattering spectroscopy and nuclear reaction analysis. The two deposition methods led …