Search results for "chemical vapor deposition"
showing 10 items of 199 documents
Integration of Metal Organic Chemical Vapour Deposition and Wet Chemical Techniques to Obtain Highly Ordered Porous ZnO Nanoplatforms
2011
Large-area, highly ordered ZnO micropores-arrays consisting of ZnO nanotubes delimited by ZnO nanorods have been successfully fabricated and tested for protein sensing applications. ZnO seed layers have been deposited by Metal Organic Chemical Vapour Deposition and readily patterned by Colloidal Lithography to attain ZnO nanorods growth at selective sites by Chemical Bath Deposition. The used synthetic approach has been proven effective for the easy assembly of ZnO nanoplatforms into high-density arrays. Both patterned and unpatterned ZnO nanorods have been morphologically and compositionally characterised and, thus, tested for model studies of protein mobility at the interface. The pattern…
Numerical study of the growth conditions in an MOCVD reactor: application to the epitaxial growth of HgTe
2002
Abstract In order to analyse the epitaxial growth by metalorganic chemical vapour deposition (MOCVD) of mercury telluride, HgTe, a 2D numerical model has been developed to simulate the gas flow in a horizontal MOCVD reactor. This model takes into account the Navier–Stokes equations coupled with the heat transfer and mass transport of chemical species. For the mathematical resolution of the governing equations a commercial solver, which can be run in a conventional personal computer, has been used. The study carried out presents a discussion about the dominant growth regime in a MOCVD growth as a function of different parameters: substrate temperature, total flow, partial pressure of precurs…
Reactivity of Nickel(II) Porphyrins in oCVD Processes—Polymerisation, Intramolecular Cyclisation and Chlorination
2019
Abstract Oxidative chemical vapour deposition of (5,15‐diphenylporphyrinato)nickel(II) (NiDPP) with iron(III) chloride as oxidant yielded a conjugated poly(metalloporphyrin) as a highly coloured thin film, which is potentially useful for optoelectronic applications. This study clarified the reactive sites of the porphyrin monomer NiDPP by HRMS, UV/Vis/NIR spectroscopy, cyclic voltammetry and EPR spectroscopy in combination with quantum chemical calculations. Unsubstituted meso positions are essential for successful polymerisation, as demonstrated by varying the porphyrin meso substituent pattern from di‐ to tri‐ and tetraphenyl substitution. DFT calculations support the proposed radical oxi…
Study of the MOCVD growth of ZnO on GaAs substrates: Influence of the molar ratio of the precursors on structural and morphological properties
2007
Abstract ZnO thin films were grown by metal-organic chemical vapour deposition (MOCVD) on GaAs(100) and GaAs(111)A substrates. The growth experiments were performed at temperatures ranging from 290 to 500 ∘C and atmospheric pressure. Diethylzinc (DEZn) and tertiary butanol (tBuOH) were used as Zn and O precursors, respectively. The crystallinity of the grown films was studied by X-Ray Diffraction (XRD) and the thickness and morphology were investigated by Scanning Electron Microscopy (SEM). The influence of substrate orientation and molar ratio of the precursors on the crystalline orientation and morphology of the ZnO grown films was analysed.
A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
2020
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1-1.4 angstrom/cycle for substrate tempe…
η⇌μ exchange bonding mode of bidentate tmeda ligand. Molecular structure of [Y(tmhd)3]2(μ-tmeda)
2003
Abstract The reaction between the yttrium β-diketonate complexes Y(tmhd)3(H2O)x (x=0 or 1) and 0.5 or 1 equivalent of N,N,N′,N′-tetramethylethylenediamine (tmeda=Me2NCH2CH2NMe2) in hexane at room temperature afforded [Y(tmhd)3]2(tmeda) (1) and Y(tmhd)3(tmeda) (2) derivatives, respectively. They have been characterized by FT-IR, 1H NMR spectroscopy and by single crystal X-ray diffraction for 1. Variable temperature 1H NMR experiments indicated an equilibrium between 1 and 2. Their thermal behaviors were characterized by TGA and sublimation experiments. 2 is converted into compound 1 by heating over 100 °C. These precursors were used for the growth of Y2O3 and YBa2Cu3O7 − x films by pulsed in…
Growth of nanometric CuGaxOystructures on copper substrates
2005
This paper presents an alternative method based on the metal–organic chemical vapour deposition technique to obtain new nanowire structures. Here, the metal–organic precursor acts as a catalyst and interacts with a metallic substrate to produce 3D structures such as nanowires. In the present case, trimethyl gallium interacts with a copper metallic substrate to build a single-crystalline CuGaxOy wire structure. Electronic microscopy techniques on image or diffraction modes have provided the structural and chemical characterization of the obtained nanowires.
Growth and characterization of Mg 1‐x Cd x O thin films
2016
In this paper, we study the growth of thin films of the Mg1–xCdxO alloy in the Mg-rich range of compositions by using the metal organic chemical vapour deposition (MOCVD) method at low pressure. X-ray diffraction (XRD) has been used to analyse the compound formation and the progressive incorporation of Cd2+ ions into the cubic MgO lattice. Both, layers with a single-cubic phase of Mg1–xCdxO and layers with a phase separation, where Cd1–xMgxO and Mg1–xCdxO coexist, have been studied. Finally, a morphological study of the layers has been carried out by using scanning electron microscopy (SEM) and the layers' composition has been measured by energy dispersive X-ray analysis (EDX). (© 2016 WILE…
Investigation of Silicon Carbide Polytypes by Raman Spectroscopy
2014
Abstract Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure
Graphene coating obtained in a cold-wall CVD process on the Co-Cr Alloy (L-605) for medical applications
2021
Graphene coating on the cobalt-chromium alloy was optimized and successfully carried out by a cold-wall chemical vapor deposition (CW-CVD) method. A uniform layer of graphene for a large area of the Co-Cr alloy (discs of 10 mm diameter) was confirmed by Raman mapping coated area and analyzing specific G and 2D bands