Search results for "defect"
showing 10 items of 879 documents
New generation low-energy probes for ultralight axion and scalar dark matter
2017
We present a brief overview of a new generation of high-precision laboratory and astrophysical measurements to search for ultralight (sub-eV) axion, axion-like pseudoscalar and scalar dark matter, which form either a coherent condensate or topological defects (solitons). In these new detection methods, the sought effects are linear in the interaction constant between dark matter and ordinary matter, which is in stark contrast to traditional searches for dark matter, where the sought effects are quadratic or higher order in the underlying interaction constants (which are extremely small).
The nature of the 4.8 eV optical absorption band induced by vacuum-ultraviolet irradiation of glassy SiO2
2000
Abstract The controversial optical absorption band centered at 4.8 eV, which is present in nearly all irradiated silicas, was investigated. It is caused by at least two different defects: non-bridging oxygen hole center (NBOHC) and interstitial ozone (O3). Both species have absorption bands at 4.8 eV, the O3-related band is identified by its susceptibility to bleaching by 4 to 5 eV photons, by a smaller halfwidth and by its independence from the NBOHC-associated 1.9 eV photoluminescence (PL) band. The contribution of NBOHC to the 4.8 eV band is dominant in most cases, while O3 is important in F2 excimer laser-irradiated samples of oxygen-rich glassy SiO2.
Modeling of yttrium, oxygen atoms and vacancies in γ-iron lattice
2011
Abstract Development of the oxide dispersion strengthened (ODS) steels for fission and fusion reactors requires a deep understanding of the mechanism and kinetics of Y 2 O 3 nanoparticle precipitation in the steel matrix. Therefore, it is necessary to perform a large-scale theoretical modeling of the Y 2 O 3 formation. In the current study, a series of first-principles calculations have been performed on different elementary clusters consisting of pair and triple solute atoms and containing: (i) the Y–Fe-vacancy pairs, (ii) the two Y atoms substituted for Fe lattice atoms and (iii) the O impurity atoms dissolved in the steel matrix. The latter is represented by a face-centered cubic γ-Fe si…
Modelling of point defects in α-AL2O3
1995
Abstract The semiempirical method of the Intermediate Neglect of Differential Overlap (INDO), in the program SYMSYM, has been used for calculations on perfect and imperfect corundum crystals. For the perfect crystal the periodical Large Unit Cell (LUC) model was used while the Molecular Cluster (MC) model was used in defect calculations. By means of the MC model, we have investigated the optical properties of electronic centers (F+, F, F−, FMg, F− Mg) in corundum. Calculated optical properties of these defects are compared with experimental values and new bands are predicted to exist in the absorption spectrum of Mg-doped corundum. The energy levels of F-type and Mg-impurity related centers…
Ion diffusion-controlled thermally stimulated processes in x-ray irradiated halide crystals
2003
The ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF2, BaF2, LiBaF3 and KBr crystals were investigated above 290 K by means of the ionic conductivity, ionic thermally stimulated depolarisation current (TSDC) and thermal bleaching techniques. Under a DC field the halide crystals store large ionic space charge. We were able to detect in CaF2, BaF2, LiBaF3 and KBr in the extrinsic ionic conductivity region a series of the ionic defect (the interstitial anion and/or anion vacancies - in fluorides; the cation vacancies - in KBr) release stages: 3-6 wide and overlapping ionic TSDC peaks. The correlated data of the ionic TSDC and the F band thermal show tha…
Radiation-induced electronic and ionic charge storage and release in sapphire
2002
Radiation-induced thermally stimulated relaxation (TSR) processes in the reduced α-Al 2 O 3 (sapphire) crystal were investigated at 290-650 K by means of the TS current (TSC), ionic depolarisation current (TSDC) and electron emission (TSEE) techniques. After thermal (ionic) polarisation of sapphire wide (∼75 K) and asymmetric ionic dipolar TSDC peak at T max 590 K (disorientation of the anion vacancy-related dipoles) was detected. This peak correlates with the wide TSEE peak at T max 615 K, the radiation-induced electrical degradation (RIED) yield rise above 550 K (T max 745 K) and the chromium emission line broadening ip ruby. Above 450-500 K the anion vacancy hopping (migration) starts. T…
Annealing of color centers in LiBaF 3
2002
Results of the glow rate technique to analyze the activation energy of thermostimulated annealing of X-ray created F -type color centers in LiBaF 3 crystals are presented, showing pure and containing oxygen centers. It is shown that depending on the impurity composition two alternative mechanisms are involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F -centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine ( F i ) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F -type centers are responsible for the recom…
The kinetics of defect aggregation: A novel lattice formalism
1995
We introduce a stochastic model for the A + B → O reaction on a discrete lattice. The system may include mono- and bimolecular steps (i. e. reaction and diffusion steps). The resulting infinite chain of equations is truncated at a certain level via a modified Kirkwood approximation.
Theoretical simulations of I-center annealing in KCl crystals
1995
Abstract This paper focus on theory of diffusion-controlled annealing of the most mobile radiation-induced defects—I centers—in KCl crystals. The kinetics of annealing of pairs of close oppositely charged defects—α-I centers (arising as a result of the tunnelling recombination of primary Frenkel defects—F and H centers) and F-I centers (when H center trap electrons) is calculated taking into account defect diffusion and Coulomb/elastic interaction. Special attention is paid to the conditions under which multi-stage annealing arises; theoretical results are compared with the relevant experimental data.
UV and vacuum-UV properties of ge related centers in gamma irradiated silica
2002
Photochemical inhomogeneity in the reduction process of the optical activity related to Ge oxygen deficient point defects in silica, characterized by an absorption band centered at 5.15 v eV and two emission bands centered at 3.2 v eV and 4.3 v eV, have been investigated. We have made a comparative study of the stationary and time dependent photoluminescence under excitation in the UV (5 v eV) and in the vacuum-UV (7.4 v eV) ranges in natural silica samples with native and with n -irradiation bleached optical activity. Our measurements evidence that the same spectral features are observed in the native and in the irradiated samples, but for an intensity reduction in the irradiated ones. Mor…