Search results for "deposition"
showing 10 items of 1324 documents
Review article: recommended reading list of early publications on atomic layer deposition - outcome of the "virtual Project on the History of ALD"
2017
Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual proj…
Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”
2017
Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition
2020
Abstract The structural and photoelectrical properties of Al-doped ZnO (AZO)/SiC/p-Si and AZO/SiC/n-Si heterojunctions, fabricated at low temperature by pulsed laser deposition, were investigated by means of a number of techniques. Raman analysis indicates that SiC layers have the cubic 3C-SiC phase, whilst X-ray diffraction measurements show that AZO films exhibit a hexagonal wurtzite structure, highly textured along the c-axis, with average crystallites size of 35.1 nm and lattice parameter c of 0.518 nm. The homogeneous and dense surface morphology observed by scanning electron microscopy was confirmed by atomic force microscopy images. Moreover, UV–Vis-NIR spectra indicated a high trans…
Low-temperature thermal and plasma-enhanced atomic layer deposition of metal oxide thin films
2017
Atomic layer deposition (ALD) is a method for thin film fabrication with atomic level precision. This thesis focuses on low-temperature thermal and plasma- enhanced ALD and presents results on thin film growth by these techniques with examples of common ALD materials: Al2O3, ZnO and TiO2. As an example of limitations of the thermal ALD the nucleation and growth of Al2O3 and ZnO films on different grades of poly(methyl methacrylate) (PMMA) are presented, showing that the initiation of the growth is strongly dependent on both the deposited material and the substrate. A potential application of the ALD ZnO films in polymer surface functionalization is demonstrated by changing in the surface wettab…
Implication of pyoverdines in the interactions of fluorescent pseudomonads with soil microflora and plant in the rhizosphere
2008
International audience
NANOWIRES AND THIN FILMS OF CIS/CIGS OBTAINED BY ELECTRODEPOSITION AS ABSORBER FOR SOLAR CELLS
2011
Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
2020
The suitability of Ti as a band gap modifier for &alpha
Characterization of rhenium oxide films and their application to liquid crystal cells
2009
Rhenium trioxide exhibits high electronic conductivity, while its open cubic crystal structure allows an appreciable hydrogen intercalation, generating disordered solid phases, with protonic conductivity. Rhenium oxide thin films have been obtained by thermal evaporation of ReO3 powders on different substrates, maintained at different temperatures, and also by reactive magnetron sputtering of a Re metallic target. A comparative investigation has been carried out on these films, by using micro-Raman spectroscopy and x-ray diffraction. Two basic types of solid phases appear to grow in the films: a red metallic HxReO3 compound, with distorted perovskite structures, like in the bulk material, a…
Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition
2021
| openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/834742/EU//ATOP | openaire: EC/H2020/965124/EU//FEMTOCHIP Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the lumines…