Search results for "edge"
showing 10 items of 3866 documents
Measurement of edge residual stresses in glass by the phase-shifting method
2011
Abstract Control and measurement of residual stress in glass is of great importance in the industrial field. Since glass is a birefringent material, the residual stress analysis is based mainly on the photoelastic method. This paper considers two methods of automated analysis of membrane residual stress in glass sheets, based on the phase-shifting concept in monochromatic light. In particular these methods are the automated versions of goniometric compensation methods of Tardy and Senarmont. The proposed methods can effectively replace manual methods of compensation (goniometric compensation of Tardy and Senarmont, Babinet and Babinet–Soleil compensators) provided by current standards on th…
Photoelastic Analysis of Edge Residual Stresses in Glass by Automated “Test Fringes” Methods
2011
Since the glass is a birefringent material, the analysis of residual stress in glass is usually carried out by means of photoelastic methods. This paper considers the automation of the “test fringes” method which is based on the use of a Babinet compensator or of a beam subjected to bending. In particular, two automated methods are proposed: the first one is based on the use of the centre fringe method in monochromatic light and the second one is based on the use of RGB photoelasticity in white light. The proposed methods have been applied to the analysis of membranal residual stresses in some tempered glasses, showing that they can effectively replace manual methods of photoelastic analysi…
A critical assessment of automatic photoelastic methods for the analysis of edge residual stresses in glass
2014
The measurement of residual stresses is of great importance in the glass industry. The analysis of residual stresses in the glass is usually carried out by photoelastic methods since the glass is a photoelastic material. This article considers the determination of membrane residual stresses of glass plates by digital photoelasticity. In particular, it presents a critical assessment concerning the automated methods based on gray-field polariscope, spectral content analysis, phase shifting, RGB photoelasticity, “test fringes” methods and “tint plate” method. These methods can effectively automate manual methods currently specified in some standards.
Photoelastic Analysis of Edge Residual Stresses in Glass by the Automated Tint Plate Method
2013
The analysis of residual stress in glass is usually carried out by means of photoelastic methods. This article considers the automation of the white light photoelastic method based on the use of a full-wave plate placed behind the glass plate. In particular, the method in based on the use of RGB photoelasticity in white light in conjunction with a full wave plate. The proposed method have been applied to the analysis of membrane residual stresses in tempered glass, showing that it can effectively replace manual methods of photoelastic analysis of residual stresses in glass when a low photoelastic retardation is present.
Titanium dioxide surface stoichiometry and ordering studied by resonant photoemission spectroscopy
2005
Abstract The electronic structure of titanium dioxide surfaces having undergone different preparations leading to different stoichiometries and crystallinities has been studied using resonant photoemission spectroscopy. Valence band photoemission spectra through the Ti 3p–3d/4s absorption edge between 45 and 55 eV were measured and allowed a characterization of defects present at the surface as well as of the quality of the surface organization. Indeed, from the comparison of the resonance results obtained for each kind of surface with the LEED patterns on the one hand and the corresponding Ti 2p core level lines on the other hand, it was evidenced that the high binding energy part of the v…
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2007
We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …
Correlation between Zn vacancies and photoluminescence emission in ZnO films.
2006
Photoluminescence and positron annihilation spectroscopy have been used to characterize and identify vacancy-type defects produced in ZnO films grown on sapphire by metal-organic chemical-vapor deposition. The photoluminescence of the samples in the near band edge region has been studied, paying particular attention to the emission at 370.5 nm (3.346 eV). This emission has been correlated to the concentration of Zn vacancies in the films, which has been determined by positron annihilation spectroscopy. Jesus.Zuniga@uv.es Vicente.Munoz@uv.es
Near band edge recombination mechanisms in GaTe
2003
GaTe samples of p-type have been investigated by analyzing the photoluminescence (PL) response for different excitation intensities at energies higher than the band gap. The PL intensity variation of recombination peaks as a function of the excitation intensity has been measured and fitted by a power law. The results show some particular features that do not appear in other III-V and II-VI compound semiconductors. These features can be interpreted by means of the recombination dynamics of the carriers in the band-gap edges. The expressions for the coefficients associated with different recombination rates and the relations between them are derived and used for understanding the recombinatio…
Luminescence of biexcitons in silver halide crystals
1998
Abstract As it is known from Urbach rule, free excitons defining the fundamental absorption edge in AgBr 1 − x Cl x (0 ⩽ x ⩽ 1). The process of primary Frenkel defect creation which involves free exciton states even in AgCl and biexciton creation in AgCl are discussed. The fast luminescence band at ≈3.0 eV observed in AgCl under high-density pulsed electron beam and laser excitation has been studied. It is shown that its intensity is a non-linear function of the excitation density. We suggest that the fast luminescence comes from biexcitons; binding energies of such biexcitons in AgBr 1 − x Cl x (0 ⩽ x ⩽ 1) are estimated.
QUADRUPOLAR CHARACTER OF THE Ti K-EDGE PREPEAKS IN TiO2 BY RESONANT AUGER
2002
Resonant spectroscopies offer a new opportunity to get more insight into excited electronic states by studying line shapes and intensities of decay processes. For photon excitations in the pre-K-edge region, the Ti KL 2,3 L 2,3 Auger spectra in TiO 2 show additional peaks when an electron is promoted in localized d-like states via a quadrupolar transition. This resonant process is used to unravel the respective contributions of quadrupolar and dipolar transitions to the absorption edge prepeaks.