Search results for "electrical resistance"
showing 10 items of 53 documents
Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors
2012
We report a systematic study of time-resolved and power-dependent photoresponse in high-efficiency germanium quantum dot photodetectors (Ge-QD PDs), with internal quantum efficiencies greater than 100 over a broad wavelength, reverse bias, and incident power range. Turn-on and turn-off response times (τ on and τ off) are shown to depend on series resistance, bias, optical power, and thickness (W QD) of the Ge-QD layer, with measured τ off values down to ∼40 ns. Two different photoconduction regimes are observed at low and high reverse bias, with a transition around -3 V. A transient current overshoot phenomenon is also observed, which depends on bias and illumination power. © 2012 American …
Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices
2018
The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…
High performance p-type segmented leg of misfit-layered cobaltite and half-Heusler alloy
2015
In this study, a segmented p-type leg of doped misfit-layered cobaltite Ca_(2.8)Lu_(0.15)Ag_(0.05)Co_4O_(9+δ) and half-Heusler Ti_(0.3)Zr_(0.35)Hf_(0.35)CoSb_(0.8)Sn_(0.2) alloy was fabricated and characterized. The thermoelectric properties of single components, segmented leg, and the electrical contact resistance of the joint part were measured as a function of temperature. The output power generation characteristics of segmented legs were characterized in air under various temperature gradients, ΔT, with the hot side temperature up to 1153 K. At ΔT ≈ 756 K, the maximum conversion efficiency reached a value of ∼5%, which is about 65% of that expected from the materials without parasitic l…
Robustness and electrical reliability of AZO/Ag/AZO thin film after bending stress
2017
Abstract The increasing interest in thin flexible and bendable devices has led to a strong demand for mechanically robust and electrically reliable transparent electrodes. Indium doped Tin Oxide (ITO) and Aluminium doped Zinc Oxide (AZO) are among the most employed transparent conductive oxides (TCO) and their reliability on flexible substrates have thus received a great attention. However, a high flexibility is usually achieved at very low thickness, which, unfortunately, compromises the electrical conductivity. Here we report the effects of mechanical bending cycles on the electrical and optical properties of ultra thin AZO/Ag/AZO multilayers (45 nm/10 nm/45 nm) and, for comparison, of AZ…
High electrical conductance of single molecules: a challenge in the series of conjugated oligomers.
2009
En route to molecular electronics: As extended, conjugated oligomers are desirable for molecular electronics, their electrical conductance should display a low attenuation factor. Zinc-complexed oligo(ethynyleneporphyrindiylethynylene)s have been prepared that are distinguished by ultralow attenuation factors in single-molecule conductance.
Strain-dependent electrical resistance of epoxy/MWCNT composite after hydrothermal aging
2015
Abstract The electrical resistance of epoxy/multi-wall carbon nanotube (MWCNT) composites was studied under the effect of hygro- and hydrothermal aging. Tensile tests were conducted and the responses in the electrical resistance were measured during the tests for samples with different prehistory of environmental exposure. The overall pattern of the electrical resistance change versus strain for the samples tested consists of linear and nonlinear regions with a broad peak that precedes the ultimate strength of the sample and occurs at the onset of evident plastic deformation in the stress–strain curve. The composite with lower content of MWCNTs exhibits a more pronounced nonlinear behavior …
Opportunity of metallic interconnects for ITSOFC : Reactivity and electrical property.
2006
International audience; Iron-base alloys (Fe-Cr) are proposed hereafter as materials for interconnect of planar-type intermediate temperature solid oxide fuel cell (ITSOFC); they are an alternative solution instead of the use of ceramic interconnects. These steels form an oxide layer (chrornia) which protects the interconnect from the exterior environment, but is an electrical insulator. One solution envisaged in this work is the deposition of a reactive element oxide coating, that slows down the formation of the oxide layer and that increases its electric conductivity. The oxide layer, formed at high temperature on the uncoated alloys, is mainly composed of chromia; it grows in accordance …
Neuronal and BBB damage induced by sera from patients with secondary progressive multiple sclerosis.
2009
An important component of the pathogenic process of multiple sclerosis (MS) is the blood-brain barrier (BBB) damage. We recently set an in vitro model of BBB, based on a three-cell-type co-culture system, in which rat neurons and astrocytes synergistically induce brain capillary endothelial cells to form a monolayer with permeability properties resembling those of the physiological BBB. Herein we report that the serum from patients with secondary progressive multiple sclerosis (SPMS) has a damaging effect on isolated neurons. This finding suggests that neuronal damaging in MS could be a primary event and not only secondary to myelin damage, as generally assumed. SPMS serum affects the perme…
Quantum size effects in solitary wires of bismuth
2007
We have performed four-probe electrical transport measurements on solitary highly crystalline wires of semimetallic bismuth with aspect ratios up to 60 at room and at cryogenic temperatures. By proper choice of the substrate material and the film deposition parameters, lithographic wires with lateral dimensions of down to one single grain, $\sim 250$ nm, were fabricated. The electrical resistance of each wire was measured against its thickness through successive reactive ion etching of the self-same wire. Quantum size effects revealed themselves as regular oscillations in the electrical resistance. Some evidence for the semimetal-to-semiconductor phase transition has been detected. The meas…
One dimensional arrays and solitary tunnel junctions in the weak coulomb blockade regime: CBT thermometry
1997
In this article we review the use of the tunnel junction arrays for primary thermometry. In addition to our basic experimental and theoretical results we stress the insensitivity of this method to the fluctuating background charges, to nonidealities in the array and to magnetic field. Important new results of this article are the low temperature corrections to the half width and depth of the measured conductance dip beyond the linear approximation. We also point ou that short arrays, single tunnel junctions in particular, show interesting deviations from the universal behaviour of the long arrays.