Search results for "electron spectroscopy"
showing 10 items of 525 documents
Structural and electrical properties of cerium tungstate: Application to methane conversion
2020
International audience; The catalytic efficiency as well as the electrical conduction mechanism of Ce2(WO4)3 powders synthetized for the oxidation of methane were investigated. Total and partial oxidation reactions were observed in the temperature range between 600 and 750 °C under CH4/dry air flux, for low CH4 concentrations. The electrical conduction mechanism is based on electron tunneling at low temperature (< 650 °C) and hopping over an ion barrier at high temperature, which favors the catalytic oxidation of CH4 in air; these mechanisms occur during the partial and total oxidation under weak gas flow. The occurrence of these types of conduction mechanism was related both to the distort…
Temperature and substrate influence on the structure of TiN O thin films grown by low pressure metal organic chemical vapour deposition
2000
Abstract This paper presents the growth and characterization of titanium oxinitride (TiN x O y ) films grown by low pressure metal organic chemical vapour deposition (LP-MOCVD). The film nitrogen content, obtained by Rutherford backscattering spectroscopy (RBS), increases as the growth temperature increases (from 23 at.% at 450°C to 46 at.% at 750°C). Below 550°C, the films do not show any X-ray diffraction pattern. Above 550°C, the deposited films present the (111) and (200) TiN textures. Films deposited on (100) Si exhibit a 2 θ shift to higher Bragg angles, depending on the N/O ratio. These shifts are explained by using a substitutional oxygen model. Moreover, the atomic structure of suc…
Elaboration and characterization of barium silicate thin films.
2008
International audience; Room temperature depositions of barium on a thermal silicon oxide layer were performed in ultra high vacuum (UHV). In-situ X-ray photoelectron spectroscopy (XPS) analyses were carried out as well after exposure to air as after subsequent annealings. These analyses were ex-situ completed by secondary ion mass spectrometry (SIMS) profiles and transmission electron microscopy (TEM) cross-sectional images. The results showed that after air exposure, the barium went carbonated. Annealing at sufficient temperature permitted to decompose the carbonate to benefit of a barium silicate. The silicate layer was formed by interdiffusion of barium with the initial SiO2 layer.
Experimental and theoretical evidence for substitutional molybdenum atoms in theTiO2(110)subsurface
2006
Molybdenum was deposited at room temperature on the ${\mathrm{TiO}}_{2}(110)$ surface in the 0--1.3 equivalent monolayer (eqML) range and was then annealed at $400\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$ in order to reach a kind of equilibrium state. A threshold was found in the behavior of the deposit: below 0.2 eqML, substitutional molybdenum occurs in titanium sites located under the bridging oxygen atoms of the ${\mathrm{TiO}}_{2}(110)$ surface. In this position, molybdenum atoms are in a structural and chemical ${\mathrm{MoO}}_{2}$-like environment. Density-functional theory calculations show that this molybdenum site is actually the most stable one in …
A diamond (1 0 0) surface with perfect phase purity
2015
Abstract Diamond surfaces with (1 0 0) orientation and perfect phase purity regarding the coexistence of sp3 and sp2 bonding as well as near surface nitrogen implanted layers are repeatedly produced from one sample by a cycle of nitrogen implantation, etching in oxygen and wet chemical etching. Comprehensive surface studies carried out by X-ray photoelectron spectroscopy (XPS) involving a deconvolution of the C 1s peak into contributions of C sp3, C sp2 and C sp3(N) reveal the surface and near-surface phase and stoichiometry. It is demonstrated that efficient etching of nitrogen implanted diamond occurs by high temperature annealing in oxygen and a wet chemical treatment.
Mesosynthesis of ZnO-SiO(2) porous nanocomposites with low-defect ZnO nanometric domains.
2011
Silica-based ZnO-MCM-41 mesoporous nanocomposites with high Zn content (5≤Si/Zn≤50) have been synthesized by a one-pot surfactant-assisted procedure from aqueous solution using a cationic surfactant (CTMABr = cetyltrimethylammonium bromide) as structure-directing agent, and starting from molecular atrane complexes as inorganic hydrolytic precursors. This preparative technique allows optimization of the dispersion of the ZnO nanodomains in the silica walls. The mesoporous nature of the final materials is confirmed by x-ray diffraction (XRD), transmission electron microscopy (TEM) and N(2) adsorption-desorption isotherms. The ZnO-MCM-41 materials show unimodal pore size distributions without …
Effective low temperature reduction of graphene oxide with vanadium(iii)
2014
Reduction of graphene oxide (GO) with vanadium(III) trichloride under various reaction conditions has been investigated. The results show that V(III) can be used as an efficient reducing agent for GO in aqueous solutions at low concentrations and in moderate temperatures under ambient conditions. The IR spectroscopy and X-ray photoelectron spectroscopy (XPS) show that the structure of the vanadium-reduced material is similar to reduced graphene oxide prepared using TiCl3 or hydrazine as a reducing agent. The electrical conductivity of the material is also similar in all cases. However, on the basis of the XPS results, vanadium-based reduction does not leave significant reductant impurities …
Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells
2011
Abstract The class of half-Heusler compounds opens possibilities to find alternatives for II–VI or III–V compound semiconductors. We aim to find suitable substitutes for the cadmium sulphide buffer layer in chalcopyrite-based thin film solar cells, where the buffer layer is located between the p-type chalcopyrite absorber and an n-type transparent window layer. We report here the preparation of radio-frequency-sputtered lithium copper sulphide “LiCuS” and lithium zinc phosphide “LiZnP” films. The optical analysis of these films revealed band gaps between 1.8 and 2.5 eV, respectively. Chemical properties of the film surface and both interfaces between the film and a Cu ( In , Ga ) Se 2 layer…
Structural and Optical Study of Ga3+ Substitution in CuInS2 Nanoparticles Synthesized by a One-Pot Facile Method
2014
A one-pot method was used to synthesize CuInxGa1–xS2 nanoparticles by substituting In3+ with Ga3+. The samples with composition of gallium ranging from 0% to 100% were synthesized by solving copper chloride, indium trichloride, gallium acetylacetonate, and thiourea as precursors in 1-octadecene, oleylamine, and oleic acid as noncoordinating, coordinating, and capping agent solvents, respectively. Depending on the chemical composition and synthesis conditions, the morphology of the as-synthesized nanoparticles obtained was trigonal, semitrigonal, hexagonal, and quasi-spherical. X-ray photoelectron spectroscopy and X-ray diffraction confirmed that Ga3+ substituted In3+ without any segregation…
Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy
2008
Abstract In this paper we investigate the band gap renormalization in heavily Ga-doped ZnO thin films deposited by pulsed laser deposition on C -plane sapphire and mica substrates. Thin films were studied by ultraviolet photoelectron spectroscopy and also by optical measurements under high pressure. The Fermi-level shift, as obtained from ultraviolet photoelectron experiments, exhibits a relatively small and positive shift (about 0.3 eV) with respect to the valence band for increasing electron concentrations up to 1021 cm−3. The optical gap exhibits a much larger increase (0.6 eV) for the same concentration range. Absorption measurements under pressure show that the pressure coefficient of …