Search results for "electron-beam lithography"
showing 10 items of 36 documents
Electrogeneration of Diiodoaurate in Dimethylsulfoxide on Gold Substrate and Localized Patterning
2016
International audience; A localized etching of gold surface by scanning electrochemical microscope technique is presented where a dimethylsulfoxide-based electrolyte charged with iodine is used. The electrogenerated triiodide ion at the platinum ultramicroelectrode tip (feedback mode) acts as an oxidant for gold surface. The effects of electrode diameter and the bias time have been investigated. The approach curve method was used to hold the electrode tip close to the gold surface. A scanning electron microscope is used to observe the etched gold surfaces where disk-shaped dots are generated. The diameter of these holes depends directly on the Pt electrode diameter and the bias time.
Design, near-field characterization, and modeling of 45 circle surface-plasmon Bragg mirrors
2006
The development of surface plasmon polariton (SPP) optical elements is mandatory in order to achieve surface plasmon based photonics. A current approach to reach this goal is to take advantage of the interaction of SPP with defects and design elements obtained by the micro- or nano-structuration of the metal film. In this work, we have performed a detailed study of the performance and behavior of SPP-Bragg mirrors, designed for 45\ifmmode^\circ\else\textdegree\fi{} incidence, based on this approach. Mirrors consisting of gratings of both metal ridges on the metal surface and grooves engraved in the metal, fabricated by means of electron beam lithography and focused ion beam, have been consi…
Potential of amorphous Mo–Si–N films for nanoelectronic applications
2003
The properties of amorphous metallic molybdenum–silicon–nitrogen (Mo–Si–N) films were characterised for use in nanoelectronic applications. The films were deposited by co-sputtering of molybdenum and silicon targets in a gas mixture of argon and nitrogen. The atomic composition, microstructure and surface roughness were studied by RBS, TEM and AFM analyses, respectively. The electrical properties were investigated in the temperature range 80 mK to 300 K. No transition into a superconductive state was observed. Nanoscale wires were fabricated using electron beam lithography with their properties measured as a function of temperature.
Holographic recording in amorphous chalcogenide semiconductor thin films
2003
Abstract A detailed study of the amorphous As–S–Se and As2S3 films as recording media for optical holography and electron beam lithography is presented. The results of R&D on resist based on the amorphous As–S–Se thin films for manufacturing of embossed holographic labels are discussed. The holographic recording of transmission and Bragg gratings was studied.
<title>Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography</title>
2001
The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As2S3 thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy.
2007
A new at-wavelength inspection technology to probe nanoscale defects buried underneath Mo/Si multilayers on an extreme ultraviolet (EUV) lithography mask blank has been implemented using EUV photoemission electron microscopy (EUV-PEEM). EUV-PEEM images of programmed defect structures of various lateral and vertical sizes recorded at an ~13.5 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps, enhancing the edge visibility of the phase defects, which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.
Exploring 10 Gb/s transmissions in Titanium dioxide based waveguides at 1.55 pm and 2.0 pm
2017
Exploring new spectral bands for optical transmission is one of the solutions to support the increasingly demand of data traffic. The recent development of dedicated hollow-core photonic bandgap fibers [1], associated to the emergence of thulium doped fiber amplifiers [2] has recently focused the attention further in the infrared, and more specifically around 2 μm. Regarding integrated photonics, it becomes therefore interesting to find a suitable platform to operate at 2 μm as well as in the other more conventional spectral bands (going from 800 nm to 1550 nm). Here, we propose titanium dioxide (TiO 2 ) as a good candidate for integrated waveguide photonics and demonstrate, for the first t…
Polymer based tuneable photonic crystals
2007
We report on the fabrication and characterization of photonic crystal slab waveguide resonators which contain a nanostructured second-order nonlinear optical polymer. The combination of a photonic crystal resonator realized in a second-order nonlinear optical polymer allowed the detection of electro-optical modulation of light with a sub-1-V sensitivity. Furthermore we report on the synthesis of novel nonlinear optical polymers with large second-order hyperpolarizability and improved glass transition temperature. The polymer slab waveguide is micro patterned by means of electron-beam lithography and reactive ion etching. The photonic crystal slab-based resonator consisted of a square lattic…
Direct observation of localized surface plasmon coupling
1999
We report on the direct observation of localized surface plasmon coupling using a photon scanning tunneling microscope. The surface plasmons are excited in gold nanostructures tailored by electron beam lithography. Electromagnetic energy transfer from a resonantly excited nanoparticle to a nanowire, which is not directly excited by the incident light is observed. Our experimental results appear to be in good agreement with theoretical computations based on Green's dyadic technique.
All-optical and electro-optical active plasmonic telecom components
2011
Active plasmonics is an attractive emerging field in which the ability to control the surface plasmon polariton (SPP) propagation finds many applications such as realization of fully functional integrated photonic circuitry. We demonstrate both numerically and experimentally switching of the SPP transmission based on two different approaches namely the all-optical and electro-optical at telecom wavelengths. The plasmonic component consists of a compact and efficient SPP switch utilizing highly sensitive ring resonator which has high sensitivity to the refractive index changes. Fabrication was done via e-beam lithography utilizing advanced proximity corrections. The compenents were character…