Search results for "electronics"

showing 10 items of 4340 documents

Quantification of Plasma Sprayed Coating Adhesion Using Pulsed Laser Induced Decohesion Technique

2001

Abstract The aim of the present study is to compare a laser ultrasonic technique with a conventional indentation test for the determination of intrinsic properties and the adhesion of alumina coatings, of different thicknesses (30–350 µm), deposited on stainless steel substrates by atmospheric plasma spraying (APS). For this purpose, a pulsed Nd:YAG laser is used to irradiate the coated specimens, and the ultrasonic waves generated by the laser are recorded at the epicenter using a laser interferometer. In the thermoelastic regime, the good agreement between the experiment and computation allows determination of the longitudinal wave velocity as well as the Young's modulus of the oxide coat…

Materials scienceAtmospheric-pressure plasmaSurfaces and InterfacesSubstrate (electronics)engineering.materialCondensed Matter PhysicsLaserSurfaces Coatings and Filmslaw.inventionThermoelastic dampingCoatinglawIndentationMaterials ChemistryengineeringUltrasonic sensorComposite materialLongitudinal waveSurface Engineering
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Hardness and modulus of elasticity of atomic layer deposited Al2O3-ZrO2 nanolaminates and mixtures

2020

This work was funded by the European Regional Development Fund project TK134 “Emerging orders in quantum and nanomaterials”, Estonian Research Agency project PRG4 “Emerging novel phases in strongly frustrated quantum magnets”.

Materials scienceAtomic layer depositionYoung's modulus02 engineering and technologySubstrate (electronics)Nanoindentation010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesNanoindentationNanocomposites0104 chemical sciencesAtomic layer depositionTetragonal crystal systemsymbols.namesakeIndentation:NATURAL SCIENCES:Physics [Research Subject Categories]symbolsGeneral Materials ScienceComposite materialThin film0210 nano-technologyLayer (electronics)Materials Chemistry and Physics
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Suppression of electron trapping by quantum dot emitters using a grafted polystyrene shell

2019

A fundamental problem of adding chromophores to an organic host is that their smaller band gap leads to severe trapping of either electrons or holes, resulting in strongly unbalanced transport. We demonstrate that electron trapping by an inorganic quantum dot (QD) in a conjugated polymer host can be suppressed by functionalizing its shell with a thin insulating polystyrene layer. The polystyrene shell not only reduces trapping, but also suppresses detrapping of captured electrons, resulting in increased charging of the QDs with subsequent voltage scans, after initial charging, a red-emitting hybrid polymer:QD light-emitting diode is obtained with voltage independent electroluminescence spec…

Materials scienceBand gap02 engineering and technologyElectronTrappingElectroluminescence010402 general chemistry01 natural scienceschemistry.chemical_compoundGeneral Materials ScienceElectrical and Electronic EngineeringDiodechemistry.chemical_classificationbusiness.industryProcess Chemistry and TechnologyPolymer021001 nanoscience & nanotechnology0104 chemical sciencesCondensed Matter::Soft Condensed MatterchemistryMechanics of MaterialsQuantum dotOptoelectronicsPolystyrene0210 nano-technologybusinessMaterials Horizons
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Charge transport mechanism in networks of armchair graphene nanoribbons

2020

In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature to enable novel graphene-based electronics. Successful synthesis of GNRs has triggered efforts to realize field-effect transistors (FETs) based on single ribbons. Despite great progress, reliable and reproducible fabrication of single-ribbon FETs is still a challenge that impedes applications and the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on a network of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with unprecedented conductivity. We show formati…

Materials scienceBand gap530 Physicslcsh:MedicineFOS: Physical sciences02 engineering and technology010402 general chemistry01 natural sciencesArticlelaw.inventionlawMesoscale and Nanoscale Physics (cond-mat.mes-hall)lcsh:ScienceCondensed-matter physicsOhmic contactQuantum tunnellingMultidisciplinaryCondensed Matter - Mesoscale and Nanoscale Physicsbusiness.industryGraphenelcsh:RTransistorCharge (physics)021001 nanoscience & nanotechnology530 PhysikMaterials science0104 chemical sciencesOptoelectronicslcsh:QCharge carrier0210 nano-technologybusinessGraphene nanoribbons
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Quantum size confinement in gallium selenide nanosheets: band gap tunability versus stability limitation

2017

Abstract Gallium selenide is one of the most promising candidates to extend the window of band gap values provided by existing two-dimensional semiconductors deep into the visible potentially reaching the ultraviolet. However, the tunability of its band gap by means of quantum confinement effects is still unknown, probably due to poor nanosheet stability. Here, we demonstrate that the optical band gap band of GaSe nanosheets can be tuned by ∼120 meV from bulk to 8 nm thick. The luminescent response of very thin nanosheets (<8 nm) is strongly quenched due to early oxidation. Oxidation favors the emergence of sharp material nanospikes at the surface attributable to strain relaxation. Simul…

Materials scienceBand gapBioengineering02 engineering and technology010402 general chemistrymedicine.disease_cause01 natural sciencesDesorptionmedicineGeneral Materials ScienceElectrical and Electronic EngineeringNanosheetbusiness.industryMechanical EngineeringRelaxation (NMR)General Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesSemiconductorMechanics of MaterialsQuantum dotOptoelectronics0210 nano-technologyLuminescencebusinessUltravioletNanotechnology
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Effect of the precursor's stoichiometry on the optoelectronic properties of methylammonium lead bromide perovskites

2017

International audience; Methylammonium lead bromide (MAPbBr 3) perovskites have been widely studied in applications such as lasers and light-emitting diodes, thanks to their favorable bandgap, efficient charge transport, and the possibility of processing by simple solution methods. The film morphology has a large impact on the optical and electronic properties of the material; hence the deposition methods and the type of precursors used are crucial in the preparation of efficient optoelectronic devices. Here we studied the effect of the precursor´s stoichiometry of solution processed MAPbBr 3 thin films on their optical and electronic properties. We found a drastic effect of the stoichiomet…

Materials scienceBand gapBiophysicsNanoparticleHalide02 engineering and technologyElectroluminescence010402 general chemistry01 natural sciencesBiochemistrylaw.inventionlawThin filmbusiness.industryGeneral ChemistrySemiconductor device[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsAtomic and Molecular Physics and Optics0104 chemical sciencesOptoelectronics0210 nano-technologybusinessStoichiometryLight-emitting diode
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Preparation and properties of radio-frequency-sputtered half-Heusler films for use in solar cells

2011

Abstract The class of half-Heusler compounds opens possibilities to find alternatives for II–VI or III–V compound semiconductors. We aim to find suitable substitutes for the cadmium sulphide buffer layer in chalcopyrite-based thin film solar cells, where the buffer layer is located between the p-type chalcopyrite absorber and an n-type transparent window layer. We report here the preparation of radio-frequency-sputtered lithium copper sulphide “LiCuS” and lithium zinc phosphide “LiZnP” films. The optical analysis of these films revealed band gaps between 1.8 and 2.5 eV, respectively. Chemical properties of the film surface and both interfaces between the film and a Cu ( In , Ga ) Se 2 layer…

Materials scienceBand gapChalcopyriteInorganic chemistryMetals and AlloysAnalytical chemistrychemistry.chemical_elementSurfaces and InterfacesCopperSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionchemistryX-ray photoelectron spectroscopySputteringlawvisual_artSolar cellMaterials Chemistryvisual_art.visual_art_mediumLithiumLayer (electronics)Thin Solid Films
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Efficient Wide-Bandgap Mixed-Cation and Mixed-Halide Perovskite Solar Cells by Vacuum Deposition

2021

Vacuum deposition methods are increasingly applied to the preparation of perovskite films and devices, in view of the possibility to prepare multilayer structures at low temperature. Vacuum-deposited, wide-bandgap solar cells based on mixed-cation and mixed-anion perovskites have been scarcely reported, due to the challenges associated with the multiple-source processing of perovskite thin films. In this work, we describe a four-source vacuum deposition process to prepare wide-bandgap perovskites of the type FA1-n Cs n Pb(I1-x Br x )3 with a tunable bandgap and controlled morphology, using FAI, CsI, PbI2, and PbBr2 as the precursors. The simultaneous sublimation of PbI2 and PbBr2 allows the…

Materials scienceBand gapEnergy Engineering and Power TechnologyHalide02 engineering and technology010402 general chemistry01 natural sciences7. Clean energyVacuum depositionMaterials ChemistryThin filmCèl·lules fotoelèctriquesPerovskite (structure)Range (particle radiation)Renewable Energy Sustainability and the Environmentbusiness.industryConductivitat elèctrica021001 nanoscience & nanotechnology0104 chemical sciencesFuel TechnologyChemistry (miscellaneous)HomogeneousOptoelectronicsPhotovoltaics and Wind EnergySublimation (phase transition)0210 nano-technologybusinessACS Energy Letters
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Vacuum-Deposited Multication Tin-Lead Perovskite Solar Cells

2020

The use of a combination of tin and lead is the most promising approach to fabricate narrow bandgap metal halide perovskites. This work presents the development of reproducible tin and lead perovskites by vacuum co-deposition of the precursors, a solvent-free technique which can be easily implemented to form complex stacks. Crystallographic and optical characterization reveal the optimal film composition based on cesium and methylammonium monovalent cations. Device optimization makes use of the intrinsically additive nature of vacuum deposition, resulting in solar cells with 8.89% photovoltaic efficiency. The study of the devices by impedance spectroscopy identifies bulk recombination as on…

Materials scienceBand gapEnergy Engineering and Power TechnologyHalidechemistry.chemical_element02 engineering and technology010402 general chemistry01 natural sciences7. Clean energylaw.inventionVacuum depositionlawSolar cellMaterials ChemistryElectrochemistryChemical Engineering (miscellaneous)Electrical and Electronic EngineeringMaterialsCèl·lules fotoelèctriquesPerovskite (structure)business.industryPhotovoltaic system021001 nanoscience & nanotechnology0104 chemical sciencesDielectric spectroscopychemistryOptoelectronics0210 nano-technologybusinessTin
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Optical and photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy

2001

Indium selenide thin films have been grown on p-type gallium selenide single crystal substrates by van der Waals epitaxy. The use of two crucibles in the growth process has resulted in indium selenide films with physical properties closer to these of bulk indium selenide than those prepared by other techniques. The optical properties of the films have been studied by electroabsorption measurements. The band gap and its temperature dependence are very close to those of indium selenide single crystals. The width of the fundamental transition, even if larger than that of the pure single crystal material, decreases monotonously with temperature. Exciton peaks are not observed even at low temper…

Materials scienceBand gapExcitonIndium compounds ; III-VI semiconductors ; Semiconductor epitaxial layers ; Electroabsorption ; Excitons ; Minority carriers ; Carrier lifetimeCarrier lifetimeGeneral Physics and Astronomychemistry.chemical_elementIII-VI semiconductorschemistry.chemical_compoundIndium compounds:FÍSICA [UNESCO]SelenideThin filmMinority carriersbusiness.industrySemiconductor epitaxial layersUNESCO::FÍSICACarrier lifetimeCopper indium gallium selenide solar cellschemistryElectroabsorptionOptoelectronicsExcitonsbusinessSingle crystalIndium
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