Search results for "electronics"

showing 10 items of 4340 documents

Fast-Response Single-Nanowire Photodetector Based on ZnO/WS 2 Core/Shell Heterostructures

2018

This work was supported by the Latvian National Research Program IMIS2 and ISSP project for Students and Young Researchers Nr. SJZ/2016/6. S.P. is grateful to the ERA.Net RUS Plus WATERSPLIT project no. 237 for the financial support. S.V. is grateful for partial support by the Estonian Science Foundation grant PUT1689.

Materials scienceNanostructureScanning electron microscopeNanowirePhotodetector02 engineering and technology010402 general chemistry01 natural sciences7. Clean energysymbols.namesake:NATURAL SCIENCES:Physics [Research Subject Categories]General Materials Sciencecore/shell nanowirestransitional metal chalcogenidesvan der Waals epitaxybusiness.industryHeterojunction021001 nanoscience & nanotechnology0104 chemical sciencesTransmission electron microscopy1D/1D heterostructuressymbolsphotodetectorsOptoelectronicsCharge carrier0210 nano-technologybusinessRaman spectroscopyACS Applied Materials & Interfaces
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Structural and Electrical Transport Properties of Si doped GaN nanowires

2016

The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have revealed a controlled doping with resistivity from 2 × 10−2 to 10−3 Ω.cm for Si doped NWs. Field effect tra…

Materials scienceNanostructureSiliconbusiness.industryDopingNanowirechemistry.chemical_elementGallium nitridechemistry.chemical_compoundchemistryElectrical resistivity and conductivityOptoelectronicsField-effect transistorbusinessMolecular beam epitaxy2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
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From dots to doughnuts: Two-dimensionally confined deposition of polyelectrolytes on block copolymer templates

2016

© 2016 Elsevier Ltd The combination of block copolymer templating with electrostatic self-assembly provides a simple and robust method for creating nano-patterned polyelectrolyte multilayers over large areas. The deposition of the first polyelectrolyte layer provides important insights on the initial stages of multilayer buildup. Here, we focus on two-dimensionally confined “dots” patterns afforded by block copolymer films featuring hexagonally-packed cylinders that are oriented normal to the substrate. Rendering the cylinder caps positively charged enables the selective deposition of negatively charged polyelectrolytes on them under salt-free conditions. The initially formed polyelectrolyt…

Materials scienceNanostructureToroidPolymers and PlasticsPolymersOrganic ChemistryLayer by layerNanotechnology02 engineering and technologySubstrate (electronics)010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesPolyelectrolyte0104 chemical sciencesEngineeringChemical SciencesMaterials ChemistryCopolymerSelf-assembly0210 nano-technologyLayer (electronics)
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Silicon carbide nanowires: synthesis and cathodoluminescence

2009

Silicon carbide nanowires have been synthesized via a combustion synthesis route. Structural studies showed that obtained SiC nanowires belong dominantly to 3C polytype with zinc-blend structure. Cathodoluminescence spectra from these nanostructures within the temperature range of 77...300 K, show obvious differences with respect to the bulk materials. The exciton band of the bulk 3C-SiC is significantly damped and the prevailing line is found to be at 1.99 eV (77 K), proving the key role of defect centers in optical properties of the investigated nanomaterial.

Materials scienceNanostructurebusiness.industryExcitonNanowireCathodoluminescenceNanotechnologyAtmospheric temperature rangeCondensed Matter PhysicsSpectral lineElectronic Optical and Magnetic MaterialsNanomaterialschemistry.chemical_compoundchemistrySilicon carbideOptoelectronicsbusinessphysica status solidi (b)
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Plasmonic Core–Satellite Assemblies as Highly Sensitive Refractive Index Sensors

2015

Highly sensitive and spectrally tunable plasmonic nanostructures are of great demand for applications such as SERS and parallel biosensing. However, there is a lack of such nanostructures for the midvisible spectral regions as most available chemically stable nanostructures offer high sensitivity in the red to far red spectrum. In this work, we report the assembly of highly sensitive nanoparticle structures using a hydroxylamine mediated core–satellite assembly of 20 nm gold nanoparticle satellites onto 60 nm spherical gold cores. The average number of satellites allows tuning the plasmon resonance wavelength from 543 to 575 nm. The core–satellite nanostructures are stable in pH ranges from…

Materials scienceNanostructurebusiness.industryNanoparticleNanotechnology02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCore (optical fiber)WavelengthGeneral EnergyOptoelectronicsPhysical and Theoretical ChemistrySurface plasmon resonance0210 nano-technologybusinessBiosensorRefractive indexPlasmonThe Journal of Physical Chemistry C
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Growth of Fe nanostructures

2004

Abstract Highly ordered arrays of epitaxial iron thin film nanostructures were grown by molecular beam epitaxy techniques on m-plane sapphire α-Al2O3 (1 0 1 0) substrates. Iron was deposited by electron beam evaporation under shallow incidence onto faceted sapphire substrates held at elevated temperatures of 450°C. Scanning electron microscopy suggests the formation of morphologically and electrically isolated nanowire structures on the ridges of the facets. The topology of the structures depends strongly on the iron deposition angle.

Materials scienceNanostructurebusiness.industryScanning electron microscopeNanowireCondensed Matter PhysicsEpitaxyElectron beam physical vapor depositionElectronic Optical and Magnetic MaterialsSapphireOptoelectronicsThin filmbusinessMolecular beam epitaxyJournal of Magnetism and Magnetic Materials
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Optimizing Energy Transduction of Fluctuating Signals with Nanofluidic Diodes and Load Capacitors

2018

[EN] The design and experimental implementation of hybrid circuits is considered allowing charge transfer and energy conversion between nanofluidic diodes in aqueous ionic solutions and conventional electronic elements such as capacitors. The fundamental concepts involved are reviewed for the case of fluctuating zero-average external potentials acting on single pore and multipore membranes. This problem is relevant to electrochemical energy conversion and storage, the stimulus-response characteristics of nanosensors and actuators, and the estimation of the accumulative effects caused by external signals on biological ion channels. Half-wave and full-wave voltage doublers and quadruplers can…

Materials scienceNanotechnology02 engineering and technology010402 general chemistry01 natural scienceslaw.inventionBiomaterialsSingle and multipore membraneslawNanosensorEnergy transformationGeneral Materials ScienceNanofluidic diodesElectronic circuitDiodeVoltage doublerbusiness.industryNanotecnologiaGeneral Chemistry021001 nanoscience & nanotechnologyElectrochemical energy conversionEnergy conversion0104 chemical sciencesCapacitorFISICA APLICADAOptoelectronicsIontronicsEnergiaHybrid circuits0210 nano-technologyActuatorbusinessBiotechnology
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Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes

2016

We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobel…

Materials scienceNanotechnology02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesIndium tin oxidechemistry.chemical_compoundchemistryElectrodeThermoelectric effectGeneral Materials ScienceBismuth selenide0210 nano-technologyElectrical conductorLayer (electronics)VoltageACS Applied Materials & Interfaces
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Breaking the Nd3+-sensitized upconversion nanoparticles myth about the need of onion-layered structures

2018

Up to now, most strategies to build efficient 800 nm-light responsive upconversion nanoparticles (UCNPs) have included onion-layered structures, in which Nd3+ is confined within the inorganic crystal structure of at least one layer. We report here an easy room-temperature modular preparation of core-shell UCNPs consisting of NaYF4:Yb,Er(Tm)/NaYF4 (UCCS) with Nd3+ anchored at the organic capping by using cucurbituril[7] (CB[7]) as an adhesive. Strikingly, excitation at 800 nm effectively triggers the upconversion emission of UCCS@CB[7]@Nd nanohybrids.

Materials scienceNanotechnology02 engineering and technologyCrystal structure010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesPhoton upconversion0104 chemical sciencesUpconversion nanoparticlesCucurbiturilGeneral Materials Science0210 nano-technologyLayer (electronics)Nanoscale
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Anodization and anodic oxides

2018

Anodizing is a low-temperature, low-cost electrochemical process allowing for the growth, on the surface of valve metals and valve metal alloys, of anodic oxides of tunable composition and properties. This article is an overview on theoretical aspects concerning the general aspects of the kinetics of growth of barrier and porous anodic oxides and some of their present and possibly future technological applications of anodic oxides. The first part of the article is devoted to anodic oxide growth models, from Guntherschulze and Betz work (in 1934) to the more recent results on barrier and porous oxide films. The second part is focused on industrial processes to fabricate anodic oxides and the…

Materials scienceNanotechnology02 engineering and technologyDielectricAnodizingElectrochemistryCorrosionAl alloysMicroelectronicsCoatings0502 economics and businessGrowth kineticsValve metals050207 economicsThin filmPorosityHigh-k materialsElectrolytic capacitorBarrier-type oxidesAnodizing05 social sciencesMetallurgy021001 nanoscience & nanotechnologyPorous-type oxidesAnodeCorrosionSettore ING-IND/23 - Chimica Fisica ApplicataAnodic oxidesAlumina membranesDielectrics0210 nano-technologyAluminum
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