Search results for "electronics"

showing 10 items of 4340 documents

Development of a 3D CZT Spectrometer System with Digital Readout for Hard X/Gamma-Ray Astronomy

2019

We report on the development and of a complete X/γ rays detection system (10-1000 keV) based on CZT spectrometers with spatial resolution in three dimensions (3D) and a digital electronics acquisition chain. The prototype is made by packing four linear modules, each composed of one 3D CZT sensors. Each sensors is realized using a single spectroscopic graded CZT crystal of about 20×20×5 mm3. An electrode structure consisting of 12 collecting anodes with a pitch of 1.6 mm and 3 drift strips between each pair of anodes for 48 strips (0.15 mm wide) on the anodic side was adopted. The cathode is made of 10 strips with a pitch of 2 mm and orthogonal to anode side strips. Since the reading of the …

Materials scienceSTRIPSCZT detectorsensorscomputer.software_genre01 natural scienceslaw.invention010309 opticsOpticslaw0103 physical sciencesDigital Readout010303 astronomy & astrophysicsImage resolutionDigital electronicsX-ray and gamma ray detectorsSpectrometerbusiness.industryFirmwareSettore FIS/01 - Fisica SperimentaleDetectorSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)CathodeAnode3D CZTbusinesscomputer2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)
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Nucleant layer effect on nanocolumnar ZnO films grown by electrodeposition

2013

Different ZnO nanostructured films were electrochemically grown, using an aqueous solution based on ZnCl2, on three types of transparent conductive oxides grow on commercial ITO (In2O3:Sn)-covered glass substrates: (1) ZnO prepared by spin coating, (2) ZnO prepared by direct current magnetron sputtering, and (3) commercial ITO-covered glass substrates. Although thin, these primary oxide layers play an important role on the properties of the nanostructured films grown on top of them. Additionally, these primary oxide layers prevent direct hole combination when used in optoelectronic devices. Structural and optical characterizations were carried out by scanning electron microscopy, atomic for…

Materials scienceScanning electron microscopeCiencias FísicasNucleationOxideNanochemistrySpin coatingNanotechnologySubstrate (electronics)Otras Ciencias FísicasNanomaterials//purl.org/becyt/ford/1 [https]chemistry.chemical_compoundMaterials Science(all)ElectrodepositionZnO filmsGeneral Materials ScienceNanomaterialsSpin coatingNano ExpressPhotovoltaic cellsFísica//purl.org/becyt/ford/1.3 [https]Condensed Matter PhysicsChemical engineeringchemistryFISICA APLICADALayer (electronics)CIENCIAS NATURALES Y EXACTASDC magnetron sputtering
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Deposition and characterization of cold sprayed nanocrystalline NiTi

2011

International audience; Binary 50Ni–50Ti mixture was prepared by mechanical alloying from elemental powders. After 48 h of milling, the nanocrystalline B2-NiTi powder was produced. Then, this as-milled powder was deposited by cold spraying in order to produce a target which can be used to create thin films by magnetron sputtering technique. The objective is to improve the electrical characterizations of the NiTi/SiO2/Si M.O.S structures. Themorphology evolution of the powder particles, the phase identification and the alloying evolution process as function of milling time were studied using scanning electron microscopy, X-ray diffraction and transmission electron microscopy. In addition, th…

Materials scienceScanning electron microscopeGeneral Chemical Engineering[ SPI.MAT ] Engineering Sciences [physics]/Materials02 engineering and technology01 natural sciences[SPI.MAT]Engineering Sciences [physics]/MaterialsSputtering0103 physical sciencesComposite material[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsComputingMilieux_MISCELLANEOUS010302 applied physics[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph]Metallurgy[CHIM.MATE]Chemical Sciences/Material chemistrySputter deposition021001 nanoscience & nanotechnologyMicrostructureNanocrystalline materialGrain size[CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistryTransmission electron microscopy[ CHIM.MATE ] Chemical Sciences/Material chemistry[ CHIM.THEO ] Chemical Sciences/Theoretical and/or physical chemistryCrystallite0210 nano-technology
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Preliminary study on the laser cleaning of stainless steels after high temperature oxidation

2000

Abstract The objective of the present work was to estimate the influence of pulsed laser irradiation on the removal of the oxide layer, which is developed on the surface of stainless steels during their exposure to high temperature oxidation. In general, this layer is a protective one, mainly against corrosion. However, in many manufacturing applications or maintenance work, the removal of the oxides is necessary; for example, the metallic surfaces should be cleaned before welding, otherwise the presence of oxides increases the tendency to brittle behaviour of the joint. In this study, a pulsed Nd:YAG laser (λ=1.064 μm, 10 ns) was used for the surface cleaning of three stainless steels with…

Materials scienceScanning electron microscopeMechanical EngineeringMetallurgyOxideWeldingCondensed Matter PhysicsLaserCorrosionlaw.inventionchemistry.chemical_compoundchemistryMechanics of MaterialslawGeneral Materials ScienceIrradiationSurface layerLayer (electronics)Materials Science and Engineering: A
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Growth, structural and optical properties of AlGaN nanowires in the whole composition range.

2013

International audience; We report on the growth of AlxGa1-xN nanowires by plasma-assisted molecular beam epitaxy for x in the 0.3-0.8 range. Based on a combination of macro- and micro-photoluminescence, Raman spectroscopy, x-ray diffraction and scanning electron microscopy experiments, it is shown that the structural and optical properties of AlGaN NWs are governed by the presence of compositional fluctuations associated with strongly localized electronic states. A growth model is proposed, which suggests that, depending on growth temperature and metal adatom density, macroscopic composition fluctuations are mostly of kinetic origin and are directly related to the nucleation of the AlGaN na…

Materials scienceScanning electron microscopeNanowireNucleationBioengineering02 engineering and technologySubstrate (electronics)Epitaxy01 natural sciencessymbols.namesake0103 physical sciencesMicroscopyGeneral Materials ScienceElectrical and Electronic Engineering010302 applied physicsMechanical EngineeringGeneral Chemistry021001 nanoscience & nanotechnologyCrystallographyMechanics of MaterialsChemical physicssymbols[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]0210 nano-technologyRaman spectroscopyMolecular beam epitaxyNanotechnology
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Improved Cu2O/AZO Heterojunction by Inserting a Thin ZnO Interlayer Grown by Pulsed Laser Deposition

2019

Cu2O/ZnO:Al (AZO) and Cu2O/ZnO/AZO heterojunctions have been deposited on glass substrates by a unique three-step pulsed laser deposition process. The structural, optical, and electrical properties of the oxide films were investigated before their implementation in the final device. X-ray diffraction analysis indicated that the materials were highly crystallized along the c-axis. All films were highly transparent in the visible region with enhanced electrical properties. Atomic force and scanning electron microscopies showed that the insertion of a ZnO layer between the Cu2O and AZO films in the heterojunction enhanced the average grain size and surface roughness. The heterojunctions exhibi…

Materials scienceScanning electron microscopeOxideCu2O02 engineering and technology01 natural sciencesPulsed laser depositionchemistry.chemical_compoundElectronic Electrical and Electronic Engineering0103 physical sciencesMaterials ChemistrySurface roughnessElectrical and Electronic EngineeringElectronic band structurepulsed laser depositionLeakage (electronics)010302 applied physicsbusiness.industryOptical and Magnetic MaterialAZOHeterojunction021001 nanoscience & nanotechnologyCondensed Matter PhysicsGrain sizeElectronic Optical and Magnetic Materialssolar cellchemistryZnOOptoelectronicsHeterojunction0210 nano-technologybusinessJournal of Electronic Materials
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Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

2022

The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. Two types of latent damage were experimentally observed in commercial SiC power MOSFETs exposed to heavy-ions. One is observed at bias voltages just below the degradation onset and it involves the gate oxide. The other damage type is observed at bias voltages below the Single Event Burnout (SEB) limit, and it is attributed to alterations of the SiC crystal-lattice. Focused ion beam (FIB) and s…

Materials scienceScanning electron microscopeRadiationFocused ion beamelektroniikkakomponentitIonSEEschemistry.chemical_compoundstomatognathic systempuolijohteetGate oxideSilicon carbideSiC MOSFETsHeavy-ionDetectors and Experimental TechniquesElectrical and Electronic EngineeringPower MOSFETSafety Risk Reliability and Qualitybusiness.industryionisoiva säteilyCondensed Matter PhysicsLatent damageAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialssäteilyfysiikkachemistrytransistoritOptoelectronicsSiC MOSFETs; Heavy-ion; Latent damage; SEEsbusinessVoltageMicroelectronics Reliability
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Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

2016

Heavy-ion induced degradation in the reverse leakage current of SiC Schottky power diodes shows distinct dependence on the angle of incidence. TCAD simulations have been used to study the physical mechanisms involved.

Materials scienceSchottky barrierchemistry.chemical_elementSchottky diodes01 natural sciencesIonpower semiconductor devicesReverse leakage currentchemistry.chemical_compoundXenonsilicon carbide0103 physical sciencesSilicon carbidecurrent-voltage characteristicsDiode010302 applied physicsta114ta213010308 nuclear & particles physicsbusiness.industrySchottky diodeAngle of incidencemodelingchemistryOptoelectronicsbusinession radiation effects
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Mechanical cleaning of graphene using in situ electron microscopy

2020

Avoiding and removing surface contamination is a crucial task when handling specimens in any scientific experiment. This is especially true for two-dimensional materials such as graphene, which are extraordinarily affected by contamination due to their large surface area. While many efforts have been made to reduce and remove contamination from such surfaces, the issue is far from resolved. Here we report on an in situ mechanical cleaning method that enables the site-specific removal of contamination from both sides of two dimensional membranes down to atomic-scale cleanliness. Further, mechanisms of re-contamination are discussed, finding surface-diffusion to be the major factor for contam…

Materials scienceScienceGeneral Physics and AstronomyNanotechnology02 engineering and technology010402 general chemistry01 natural sciencesArticleGeneral Biochemistry Genetics and Molecular Biologylaw.inventionlawlcsh:ScienceMaterialsMultidisciplinaryGrapheneQGeneral ChemistryContamination021001 nanoscience & nanotechnologyNanocrystalline material0104 chemical sciencesMembranelcsh:QHandling specimensElectron microscope0210 nano-technologyMechanical and structural properties and devicesLayer (electronics)In situ electron microscopyNature Communications
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Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy

1997

Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…

Materials scienceSemiconductor MaterialsGrain BoundariesScanning electron microscopeVapor phaseGeneral Physics and AstronomyMercury Compounds ; Cadmium Compounds ; Semiconductor Materials ; Vapour Phase Epitaxial Growth ; Semiconductor Growth ; Semiconductor Epitaxial Layers ; Scanning Electron Microscopy ; X-Ray Topography ; Grain BoundariesEpitaxylaw.inventionlaw:FÍSICA [UNESCO]Cadmium CompoundsSemiconductor Epitaxial Layersbusiness.industryMercury CompoundsX-Ray TopographyUNESCO::FÍSICASynchrotronCadmium telluride photovoltaicsCrystallographySemiconductor GrowthOptoelectronicsVapour Phase Epitaxial GrowthGrain boundaryCrystalliteScanning Electron MicroscopybusinessLayer (electronics)
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