Search results for "electronics"
showing 10 items of 4340 documents
Oligo(phenylenevinylene)s with Terminal Donor–Acceptor Substitution This work was supported by the Deutsche Forschungsgemeinschaft and the Fonds der …
2002
Transmission Attenuation Power Ratio Analysis of Flexible Electromagnetic Absorber Sheets Combined with a Metal Layer.
2018
Electromagnetic noise absorber sheets have become a solution for solving complex electromagnetic interference (EMI) problems due to their high magnetic losses. This contribution is focused on characterizing a novel structure that is based on an absorber film with a metal layer attached on its top side. Two different absorber compositions were combined with Al and Cu metal layers in order to study the improvement on the performance of these structures, depending on the complex permeability, absorber film thickness, and type of metal. The transmission attenuation power ratio of the absorber films is analyzed and compared to the performance of absorber and metal structures. The measurement pro…
Unstable behaviour of normally-off GaN E-HEMT under short-circuit
2018
The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving the…
Wide Temperature Operation of 40-Gb/s 1550-nm Electroabsorption Modulated Lasers
2006
Electroabsorption modulated lasers (EMLs) exploiting the quantum confined Stark effect need thermoelectric coolers to achieve stable output power levels and dynamic extinction ratios. Temperature-independent operation is reported between 20/spl deg/C and 70/spl deg/C for InGaAlAs-InP-based monolithically integrated 1550-nm EMLs exploiting a shared active area at 40 Gb/s by actively controlling the electroabsorption modulator bias voltage. Dynamic extinction ratios of at least 8 dB and fiber-coupled mean modulated optical power of at least 0.85 mW are obtained over the mentioned temperature range.
Angle resolved X-ray photoemission spectroscopy double layer model for in situ characterization of metal organic chemical vapour deposition nanometri…
2007
International audience; In situ Angle Resolved X-ray Photoemission Spectroscopy (ARXPS) characterizations of TiO2 thin films grown on silicon by Metal Organic Chemical Vapour Deposition were performed in order to get information on interfacial reactions at the first stages of the growth, one of the aims being to understand the influence of deposition conditions. Thickness measurements were also carried out from ARXPS analyses. As the real structure of the films was shown to be a double layer system such as TiO2/SiO2/Si, an ARXPS model of thickness and surface coverage determination was applied to each layer independently. However, the application of this model to very thin films underestima…
Thickness-dependent properties of ultrathin bismuth and antimony chalcogenide films formed by physical vapor deposition and their application in ther…
2021
This work was supported by the European Regional Development Fund (ERDF) project No 1.1.1.1/16/A/257. J. A. acknowledges the ERDF project No. 1.1.1.2/1/16/037. Institute of Solid State Physics, University of Latvia, Latvia as the Center of Excellence has received funding from the European Union's Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017 TeamingPhase2 under grant agreement No. 739508, project CAMART2 . The raw/processed data required to reproduce these findings cannot be shared at this time as the data also form a part of an ongoing study.
On the possibility of synthesizing multilayered coatings in the (Ti,Al)N system by RGPP: A microstructural study
2019
International audience; Radiofrequency magnetron sputtering combined with reactive gas pulsing process was used to synthesize two titanium aluminum nitride multilayer films using a periodically controlled nitrogen flow rate changing from 0.4 to 1 sccm (sample S04-1) and from 0 to 1 sccm (sample S0-1). A metallic TiAl buffer layer was deposited on the etched substrates before the deposition to enhance their adhesion. The films were characterized using mainly transmission electron microscopy and electron diffraction. The role of the crystallinity of the buffer TiAl metallic layer deposited before gas introduction on the growth orientations is emphasized. It is shown that the formation of a mu…
Thin Film Organic Thermoelectric Generator Based on Tetrathiotetracene
2017
This is the peer reviewed version of the following article: K. Pudzs, A. Vembris, M. Rutkis, S. Woodward, Adv. Electron. Mater. 2017, 1600429, which has been published in final form at http://onlinelibrary.wi...002/aelm.201600429/full This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
Surfactant effect of Sb on the growth of Ag films on a sapphire substrate
1996
It is shown that a very thin layer of Sb may be used as a surfactant to modify the growth of silver films on an insulating substrate. The conduction (percolation) current flowing through a dispersed Ag film appears at a significantly smaller thickness due to the change in the growth mode of silver islands. Some practical applications are indicated.