Search results for "electronics"
showing 10 items of 4340 documents
Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells
2011
We have investigated the role of the metal-semiconductor back contact on the performances of thin film modules consisting of single junction a-Si:H photovoltaic (PV) cells deposited with p-i-n configuration. We find that an adequate choice of the back contact helps reducing the barrier height of the junction improving the contact conductivity. For this purpose Mo has shown to be effective. Moreover we find that Mo, as refractory material, has additional beneficial effects reducing the formation of defects leading to the decrease of recombination losses. We have then fabricated a PV module on flexible substrate for indoor energy harvesting applications using Mo as back contact. An efficiency…
Development of two-color resonance ionization scheme for Th using an automated wide-range tunable Ti:sapphire laser system
2018
Two-color resonance ionization schemes of Th were investigated by an automated wide-range tunable, grating-assisted Ti:Sa laser system with intracavity SHG option. A two-color ionization scheme via autoionizing state (1st step: 372.049 nm and 2nd step: 401.031 nm) was developed and its relative efficiency was lower by factor of three compared to a known three color scheme. peerReviewed
Monitoring Reversible Tight Junction Modulation with a Current-Driven Organic Electrochemical Transistor
2021
Long-term sealing ability of GuttaFlow versus Ah Plus using different obturation techniques.
2010
Objective. To compare the long-term sealing ability of GuttaFlow® using different obturation techniques. Study Design. Three hundred teeth, prepared with a crown-down technique, were divided into thirty experimental groups (n=10) to evaluate the apical and coronal leakage, at 3, 30 and 120 days, of lateral compaction gutta-percha + AH Plus?, lateral compaction gutta-percha + GuttaFlow®, single cone + AH Plus?, single cone + GuttaFlow®, and GuttaFlow® only. Results. Both coronal and apical leakage, at the three times of measurement, no significant differences were found among GuttaFlow® + lateral compaction gutta-percha and GuttaFlow® + single cone groups, whereas the only GuttaFlow® reached…
Dynamic control of the operation regimes of a mode-locked fiber laser based on intracavity polarizing fibers: experimental and theoretical validation.
2012
[EN] An intracavity polarizing fiber is proposed to control the emission regime of a passively mode-locked fiber laser. Stable operation in self-starting high and low dispersion soliton mode-locking and 100 GHz multiwavelength regimes is demonstrated through numerical simulations and experimental validation. Mode-locking stability is ensured by a saturable absorber in the ring cavity. The effective selection of operation regime is dynamically carried out by controlling the intracavity polarization state.
Ultralow chirp photonic crystal fiber Mach-Zehnder interferometer
2018
A photonic crystal fiber Mach-Zehnder interferometer design was optimized to obtain high performance and ultralow chirp. Two long-period gratings were used to excite the cladding modes, and the rich structure of the cladding was tailored to obtain a slightly chirped free spectral range, as required by the Telecommunication Standardization Sector of the International Telecommunication Union (ITU-T) Norm G.694.1. Finally, a fabrication tolerance analysis was performed. The advantages of the proposed device are an ultralow chirp, high bandwidth, and fabrication robustness tolerance.
Controlling the mode of operation of organic transistors through side chain engineering
2016
Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode…
Thermo-optic control of dielectric-loaded plasmonic waveguide components
2010
International audience; We report preliminary results on the development of compact (length 20%) is demonstrated with MZI-and WRR-based components, and efficient (similar to 30%) rerouting is achieved with DC switches. (C) 2010 Optical Society of America
Assessing Radiation Hardness of SIC MOS Structures
2018
It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.
Current-Driven Organic Electrochemical Transistors for Monitoring Cell Layer Integrity with Enhanced Sensitivity
2021
In this progress report an overview is given on the use of the organic electrochemical transistor (OECT) as a biosensor for impedance sensing of cell layers. The transient OECT current can be used to detect changes in the impedance of the cell layer, as shown by Jimison et al. To circumvent the application of a high gate bias and preventing electrolysis of the electrolyte, in case of small impedance variations, an alternative measuring technique based on an OECT in a current-driven configuration is developed. The ion-sensitivity is larger than 1200 mV V-1 dec-1 at low operating voltage. It can be even further enhanced using an OECT based complementary amplifier, which consists of a p-type a…