Search results for "electronics"

Actinic inspection of sub-50 nm EUV mask blank defects

2007

A new actinic mask inspection technology to probe nano-scaled defects buried underneath a Mo/Si multilayer reflection coating of an Extreme Ultraviolet Lithography mask blank has been implemented using EUV Photoemission Electron Microscopy (EUV-PEEM). EUV PEEM images of programmed defect structures of various lateral and vertical sizes recorded at around 13 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps enhancing the visibility of the edges of the phase defects which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.

Inspection of EUVL mask blank defects and patterned masks using EUV photoemission electron microscopy

2008

We report on recent developments of an "at-wavelength" full-field imaging technique for inspection of multilayer mask blank defects and patterned mask samples for extreme ultraviolet lithography (EUVL) by EUV photoemission electron microscopy (EUV-PEEM). A bump-type line defect with a width of approximately 35nm that is buried beneath Mo/Si multilayer has been detected clearly, and first inspection results obtained from a patterned TaN absorber EUVL mask sample is reported. Different image contrast of a similar width of multilayer-covered substrate line defect and on top TaN absorber square has been observed in the EUV-PEEM images, and origin of the difference in their EUV-PEEM image contra…

Effect of humidity on the hysteresis of single walled carbon nanotube field-effect transistors

2008

Single walled carbon nanotube field-effedt transistores (SWCNT FETs) are attributed as possible building blocks for future molecular electronics. But often these transistors seem to randomly display hysteresis in their transfer characteristics. One reason for this is suggested to be water molecules adsorbed to the surface of the gate dielectric in this study we investigate the thysteresis of SWCNT FETs at different relative humidities. We find that SWCNT FETs having atomic layer deposited (ALD) Hf0 2 -Ti0 2 .- Hf0 2 as a gate dielectric retain their. ambient condition hysteresis better in dry N2 environment than the more commonly used SiO 2 gate oxide.

Solution processed organic light-emitting diodes using a triazatruxene crosslinkable hole transporting material.

2018

A cross-linkable triazatruxene that leads to insoluble films upon thermal annealing at temperatures compatible with flexible substrates is presented. The films were used as the hole transporting and electron blocking layer in partially solution processed phosphorescent organic light-emitting diodes, reaching power conversion efficiencies of 24 lm W−1, an almost 50% improvement compared to the same OLEDs without the cross-linkable hole transporting layer.

Spatiotemporal colorimetry to reveal electrochemical kinetics of poly(o-toluidine) films along ITO surface

2018

Abstract Sheet resistance of transparent conducting electrodes can affect dramatically the electrochromic response of surface confined active species in any electrochromic device. The generated gradient of effective potential on the electrode surface has a direct impact on the electrochemical kinetics of these species. In this work, the electrochromic poly (o-toluidine) (POT) film, a derivative polyaniline, was deposited along a narrow, long transparent indium tin oxide (ITO) supporting electrode with a sheet resistivity of 30 Ω cm−1. This configuration was used as a model to simulate a surface electrical conduction from the external metallic contact to the opposite extreme of ITO with an i…

Large Photonic Films by Crystallization on Fluid Substrates

2002

Cracks, which appear due to shrinkage during drying of artificial opaline films, strongly limit the use of these materials. Crystallization on fluid substrates (liquid metals) is a way to circumvent this problem. By this method it is possible to prepare crack-free three-dimensional “monocrystals” with a very low defect density and the size in millimeters.

Correlating the Lifetime and Fluorine Content of Iridium(III) Emitters in Green Light-Emitting Electrochemical Cells

2013

In light-emitting electrochemical cells, the lifetime of the device is intrinsically linked to the stability of the phosphorescent emitter. In this study, we present a series of ionic iridium(III) emitters based on cyclometalating phenylpyridine ligands whose fluorine substituents are varied in terms of position and number. Importantly, despite these structural modifications, the emitters exhibit virtually identical electrochemical and spectroscopic properties, which allows for proper comparison in functional devices. Quantum chemical calculations support the properties measured in solution and suggest great similarities regarding the electronic structures of the emitters. In electrolumines…

Ag sensitized TiO2 and NiFe2O4 three-component nanoheterostructures: synthesis, electronic structure and strongly enhanced visible light photocatalyt…

2016

This study reports on the synthesis and characterisation of two- and three-component visible light active photocatalytic nanoparticle heterostructures, based on TiO2 and NiFe2O4 and sensitized with Ag. We observe that a Ag content as small as 1 at% in the TiO2/NiFe2O4 heterostructure increases by more than an order of magnitude the rate constant for the visible light photocatalytic process. We rationalise this in terms of the measured structure and electronic structure data of the binary and ternary combinations of the component materials and focus on details, which show that an optimised deposition sequence is vital for attaining high values of photocatalytic efficiency, because the charge…

2017

Two cationic Ir(III) complexes bearing 2-phenylpyridinato cyclometalating ligands and bithiazole-type ancillary ligands have been synthesized and optoelectronically characterised. These emitters exhibit unusually deep red-to-near-infrared emission at room temperature, thereby rendering them as attractive emitters in solution-processed light emitting electrochemical cell (LEEC) electroluminescent devices.

Amorphous semiconductor—electrolyte junction. Impedance study on the a-Nb2 O5—electrolyte junction

1990

Abstract A systematic study of the impedance behaviour of the anodic niobium oxide film/aqueous electrolyte interface was carried out using the lock-in technique at different signal frequencies. The dependence of both components of the impedance on the electrode potential and on frequency is analysed by taking into account the amorphous nature of the films. The lack of long-range order in these oxide layers modifies the physical picture in respect to the case of single crystal semiconductors. A new equivalent circuit has been assumed, based on recent theory of an amorphous semiconductor Schottky barrier. Such a new approach allows the characterization of the interface and the determination …