Search results for "electronics"

showing 10 items of 4340 documents

Surface properties of AlInGaN/GaN heterostructure

2016

Abstract Surface structural, electronic and electrical properties of the quaternary alloy AlInGaN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10–11) V-defect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied.

Materials sciencechemistry.chemical_elementCondensed Matter Physic02 engineering and technologyKelvin probe force microscopy01 natural sciencesOxygenlaw.inventionBarrier layerlaw0103 physical sciencesMicroscopyMechanics of MaterialGeneral Materials ScienceScanning tunneling microscopySpectroscopy010302 applied physicsV-defectbusiness.industryMechanical EngineeringHeterojunctionAlInGaN/GaNCiència dels materials021001 nanoscience & nanotechnologyCondensed Matter PhysicsMicroscòpiachemistryMechanics of MaterialsChemisorptionOptoelectronicsMaterials Science (all)Scanning tunneling microscope0210 nano-technologybusinessVolta potentialMaterials Science in Semiconductor Processing
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Nonprecious Copper‐Based Transparent Top Electrode via Seed Layer–Assisted Thermal Evaporation for High‐Performance Semitransparent n‐i‐p Perovskite …

2019

Semitransparent perovskite solar cells (ST‐PSCs) are highly attractive for applications in building‐integrated photovoltaics as well as in multijunction tandem devices. To fabricate high‐performance ST‐PSCs, suitable transparent top electrodes are strongly needed. Dielectric/metal/dielectric (DMD) multilayer structures have been shown to be promising candidates, though generally based on high‐value metals such as gold or silver, the latter causing also stability issues by reacting with perovskite. Here, a novel DMD transparent electrode based on nonprecious, less‐reactive copper is developed via thermal evaporation and used as a top anode in the fabrication of high‐performance semitranspare…

Materials sciencechemistry.chemical_elementCopperIndustrial and Manufacturing Engineeringmolybdenum oxideseed layerChemical engineeringchemistrySettore CHIM/03 - Chimica Generale E InorganicaMechanics of MaterialscopperElectrodeGeneral Materials ScienceLayer (electronics)perovskitesemitransparentSettore CHIM/02 - Chimica FisicaPerovskite (structure)Advanced Materials Technologies
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Molybdenum thin-film growth on rutile titanium dioxide ()

2002

Molybdenum films were deposited at room temperature on rutile TiO2(1 1 0) surfaces having different stoichiometries, surface roughnesses and crystallinities. The film structures and compositions and the substrate–film interfaces were investigated by X-ray diffraction, high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. Different substrate pretreatments resulted in markedly different film and interface structures. Under the growth conditions studied, no amorphous molybdenum oxide interlayers were formed upon deposition in contrast to previous studies. Preferred (1 1 0) textured Mo films grew on both air-annealed and oxygen-bombarded substrates. While sh…

Materials sciencechemistry.chemical_elementCrystal growthSurfaces and InterfacesSubstrate (electronics)Condensed Matter PhysicsEpitaxySurfaces Coatings and FilmsAmorphous solidchemistry.chemical_compoundCrystallographychemistryChemical engineeringRutileMolybdenumTitanium dioxideMaterials ChemistryThin filmSurface Science
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Low-Power consumption Franz-Keldysh effect plasmonic modulator

2014

In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 ${\mu}m$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.

Materials sciencechemistry.chemical_elementFOS: Physical sciencesGermaniumApplied Physics (physics.app-ph)OpticsElectro-absorption modulatorMesoscale and Nanoscale Physics (cond-mat.mes-hall)Condensed Matter - Materials ScienceExtinction ratioCondensed Matter - Mesoscale and Nanoscale Physicsbusiness.industryElectro-optic modulatorMaterials Science (cond-mat.mtrl-sci)BiasingEnergy consumptionPhysics - Applied PhysicsAtomic and Molecular Physics and OpticsFranz–Keldysh effectCondensed Matter - Other Condensed MatterOptical modulatorchemistryOptoelectronicsbusinessOptics (physics.optics)Other Condensed Matter (cond-mat.other)Physics - Optics
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Influence of the composition of titanium oxynitride layers on the fretting behavior of functionalized titanium substrates: PVD films versus surface l…

2014

International audience; Abstract In this work we compared the fretting behavior of pure titanium plates functionalized with titanium oxynitride surface layers, obtained by two methods: a Physical Vapor Deposition (PVD) method, reactive magnetron sputtering, and Surface Laser Treatments (SLT), under different mixtures of oxygen and nitrogen. The composition of the layers was determined by nuclear reaction analysis (NRA) and their structure was analyzed by Raman spectroscopy. PVD layers were TiN-like fcc layers, with an oxygen concentration going from 36 to 50 at.%. Three SLT layers were studied. The first one was a TiN-like layer containing ~28 at.% of oxygen. The second one was formed of di…

Materials sciencechemistry.chemical_elementFretting02 engineering and technologyengineering.material01 natural sciencesLaser nitriding PVD Titanium Tribology NRA Raman spectroscopysymbols.namesakeCoatingSputtering0103 physical sciencesMaterials ChemistryComposite material010302 applied physicsMetallurgy[CHIM.MATE]Chemical Sciences/Material chemistrySurfaces and InterfacesGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and FilmsTitanium oxidechemistry[ CHIM.MATE ] Chemical Sciences/Material chemistryPhysical vapor depositionengineeringsymbols0210 nano-technologyRaman spectroscopyLayer (electronics)TitaniumSurface and Coatings Technology
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Investigation of recovery mechanisms in dye sensitized solar cells

2016

Abstract We study the spontaneous recovery phenomenon displayed by solar cells sensitized with a ruthenium complex-based dye N719, which manifests with the increase over the time (from several minutes up to some days) of the short circuit current density J sc and the open circuit voltage V oc , during cell illumination. Under dark conditions the current decreases over time after the application of forward bias voltages. We investigate the effects of temperature and electrolyte composition by means of current–voltage measurements and electrochemical impedance spectroscopy, both under dark and illumination conditions. The main result is that the recovery of the performances depends on the cha…

Materials sciencechemistry.chemical_elementImpedance spectroscopy02 engineering and technologyElectrolyte010402 general chemistryPhotochemistryDye-sensitized solar cells01 natural sciencesIonchemistry.chemical_compoundCurrent–voltage transientGeneral Materials ScienceTriiodideRenewable Energy Sustainability and the Environmentbusiness.industryOpen-circuit voltageElectron lifetimesCurrent-voltage transients021001 nanoscience & nanotechnologyElectron lifetimes.0104 chemical sciencesDielectric spectroscopyRutheniumDye-sensitized solar cellchemistryOptoelectronics0210 nano-technologybusinessDye-sensitized solar cellShort circuit
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ZnS Ultrathin interfacial layers for optimizing carrier management in Sb2S3-based photovoltaics

2021

Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over th…

Materials sciencechemistry.chemical_elementanti-recombination layer02 engineering and technology010402 general chemistry7. Clean energy01 natural sciencesAtomic layer depositionAntimonyPhotovoltaicsinterfacial layerGeneral Materials Sciencepassivation layerÒxidsMaterialsCèl·lules fotoelèctriquesextremely thin absorberthin film solar cellsintegumentary systemLow toxicitybusiness.industrytunnel barrierfood and beverages021001 nanoscience & nanotechnology0104 chemical sciencesTunnel barrierchemistrybiological sciencesatomic layer depositionSolar energy conversionOptoelectronicschalcogenidesThin film solar cell0210 nano-technologybusinessResearch Article
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Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

2017

Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) an…

Materials sciencecontact resistanceSchottky barrier2General Physics and AstronomyField effectContext (language use)02 engineering and technologyMoSlcsh:Chemical technologylcsh:Technology01 natural scienceslaw.inventionPhysics and Astronomy (all)law0103 physical scienceslcsh:TP1-1185General Materials ScienceElectrical and Electronic Engineeringtemperature dependencelcsh:Sciencethreshold voltage010302 applied physicslcsh:TSubthreshold conductionbusiness.industrySettore FIS/01 - Fisica SperimentaleTransistorContact resistance021001 nanoscience & nanotechnologymobilitylcsh:QC1-999Threshold voltageOptoelectronicslcsh:QField-effect transistorMaterials Science (all)MoS20210 nano-technologybusinesslcsh:PhysicsBeilstein Journal of Nanotechnology
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Nanoengineered Gd3Al2Ga3O12 Scintillation Materials with Disordered Garnet Structure for Novel Detectors of Ionizing Radiation

2019

The authors are grateful to Baker Hughes a GE Company for support of this activity. This work has also been supported by grant N14.W03.31.0004 from the Government of the Russian Federation.

Materials sciencedisordered crystal02 engineering and technologyNanoengineeringscintillatorsScintillator01 natural sciencesIonizing radiation0103 physical sciences:NATURAL SCIENCES:Physics [Research Subject Categories]luminescenceGeneral Materials Scienceco-precipitation010302 applied physicsScintillationbusiness.industryDetectormulticomponent garnetGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsOptoelectronicsnanoengineering0210 nano-technologybusinessLuminescence
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PANI-Based Wearable Electrochemical Sensor for pH Sweat Monitoring

2021

Nowadays, we are assisting in the exceptional growth in research relating to the development of wearable devices for sweat analysis. Sweat is a biofluid that contains useful health information and allows a non-invasive, continuous and comfortable collection. For this reason, it is an excellent biofluid for the detection of different analytes. In this work, electrochemical sensors based on polyaniline thin films deposited on the flexible substrate polyethylene terephthalate coated with indium tin oxide were studied. Polyaniline thin films were abstained by the potentiostatic deposition technique, applying a potential of +2 V vs. SCE for 90 s. To improve the sensor performance, the electronic…

Materials scienceelectrochemical sensor02 engineering and technologySubstrate (electronics)QD415-436wearable sensor010402 general chemistry01 natural sciencespH meterBiochemistryreduced graphene oxidepolyanilineAnalytical ChemistryContact anglechemistry.chemical_compoundPolyanilineSettore ING-IND/17 - Impianti Industriali MeccanicipH sensorPhysical and Theoretical ChemistryThin filmSettore ING-IND/34 - Bioingegneria Industriale021001 nanoscience & nanotechnology0104 chemical sciencesElectrochemical gas sensorIndium tin oxidesweatSettore ING-IND/23 - Chimica Fisica ApplicataChemical engineeringchemistryElectrode0210 nano-technologyChemosensors
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