Search results for "electronics"
showing 10 items of 4340 documents
Copper patterning on dielectrics by laser writing in liquid solution
1994
A technique suitable for laser induced deposition of copper on LiNbO 3 and glass is presented. Deposition is achieved from Cu salt solution mixed with glycerol, after coating the surface with a very thin metal film. High resolution and low electrical resistivity can be achieved, using laser power levels in the 20-mW range. The technique can be used for electrode and interconnect fabrication in integrated optical devices, as well as mask repair or microelectronics applications.
Growth and characterization of horizontally suspended CNTs across TiN electrode gaps.
2010
A technique is proposed to grow horizontal carbon nanotubes (CNTs) bridging metal electrodes and to assess their electrical properties. A test structure was utilized that allows for selective electrochemical sidewall catalyst placement. The selectivity of the technique is based on the connection of the desired metal electrodes to the silicon substrate where the potential for electrochemical deposition was applied. Control over the Ni catalyst size (15-30 nm) and density (up to 3 x 10(11) particles cm(-2)) is demonstrated. Horizontal CNTs with controlled diameter and density were obtained by CVD growth perpendicular to the sidewalls of patterned TiN electrode structures. Electrode gaps with …
Design and fabrication of an acoustic micromixer for biological media activation
2014
International audience; The bioassay of infinitesimal quantities of protein markers in biological samples is the way to early cancer detection. However, this detection can be limited by the diffusion of these macromolecules (analytes) from the bulk to the sensor chip (surface of ligands). Here, we propose a new method to overcome this drawback by the activation of the biological media during the detection step. The principle consists in using ultrasonic vibrations in order to disrupt the equilibrium states of such biomolecular reactions and performing simultaneous detection inside an acoustic micromixer. Technological realization and initial characterizations of the device have been perform…
Reversible Photochemical Control of Doping Levels in Supported Graphene
2017
Controlling the type and density of charge carriers in graphene is vital for a wide range of applications of this material in electronics and optoelectronics. To date, chemical doping and electrostatic gating have served as the two most established means to manipulate the carrier density in graphene. Although highly effective, these two approaches require sophisticated graphene growth or complex device fabrication processes to achieve both the desired nature and the doping densities with generally limited dynamic tunability and spatial control. Here, we report a convenient and tunable optical approach to tune the steady-state carrier density and Fermi energy in graphene by photochemically c…
Advances in Perovskite Solar Cells.
2015
Organolead halide perovskite materials possess a combination of remarkable optoelectronic properties, such as steep optical absorption edge and high absorption coefficients, long charge carrier diffusion lengths and lifetimes. Taken together with the ability for low temperature preparation, also from solution, perovskite-based devices, especially photovoltaic (PV) cells have been studied intensively, with remarkable progress in performance, over the past few years. The combination of high efficiency, low cost and additional (non-PV) applications provides great potential for commercialization. Performance and applications of perovskite solar cells often correlate with their device structures…
Bringing Plasmonics Into CMOS Photonic Foundries: Aluminum Plasmonics on Si$_{3}$N$_{4}$ for Biosensing Applications
2019
We present a technology platform supported by a new process design kit (PDK) that integrates two types of aluminum plasmonic waveguides with Si $_{3}$ N $_{4}$ photonics towards CMOS-compatible plasmo-photonic integrated circuits for sensing applications. More specifically, we demonstrate the fabrication of aluminum slot waveguide via e-beam lithography (EBL) on top of the Si $_{3}$ N $_{4}$ waveguide and an optimized fabrication process of aluminum plasmonic stripe waveguides within a CMOS foundry using EBL. Experimental measurements revealed a propagation length of 6.2 μm for the plasmonic slot waveguide in water at 1550 nm, reporting the first ever experimental demonstration of a plasmon…
Multilevel pattern generation by GaN laser lithography: an application to beam shaper fabrication
2006
The new GaN lasers represent a unique combination of compactness, reliability, energy efficiency, and short wavelength. With respect to the previous state of the art in direct laser write lithography, based on gas lasers, this is resulting in a breakthrough, and is opening the way to real desktop micropatterning. The field of diffractive optics can immediately benefit by the availability of a new breed of pattern generators, based on such sources, mainly for fast turnaround device development. This paper presents the technical advantages involved in the use of 405 nm GaN lasers for one-step multilevel patterning. Beam modulation, exposure control and overall process strategy are discussed. …
An Example of Ti:LiNbO3 Device Fabrication: The Mach-Zehnder Electrooptical Modulator
1994
Integrated optics on LiNbO3 has already reached a stage of maturity. Several manufacturers are producing standard and custom devices on LiNbO3 such as high speed (up to 20 GHz) phase and intensity modulators, switching matrices, hybrid optical gyroscopes, etc.1. Two techniques are commonly used to fabricate these devices: titanium indiffusion for 1.3 and 1.5 μm wavelength operation and annealed proton exchange (APE) at 0.8 μm, due to its higher power handling capacity.
Nonstoichiometric silica mask to fabricate reverse proton-exchange waveguides in lithium niobate crystals
2004
Producing channel waveguides requires a photolithographic mask, but the standard technique of using thermally evaporated metal films for proton exchange has proved to be unsuitable for withstanding the rather aggressive process of reverse proton exchange. We report the fabrication of a nonstoichiometric silica mask by ion-plating plasma-assisted deposition. This mask is strong enough to resist both direct and reverse proton exchange and is also compatible with anisotropic dry etching for patterning the mask and with electric field poling. Our technique is a practical alternative to the use of SiO2 sputtered masks.
Microreflectivity studies of wavelength control in oxidised AlGaAs microcavities
2003
Wet oxidation of GaAs/AlGaAs structures is an important technique in the processing of advanced devices such as vertical cavity surface emitting lasers (VCSELs). In one VCSEL application, the low-index and electrically-insulating AlxOy layers have been used to obtain high-reflectivity and broad bandwidth distributed Bragg reflector mirrors (DBRs). A further recent development has shown that combined lateral–vertical oxidation of intracavity AlGaAs layers can be used to tune the resonant wavelength of a semiconductor microcavity. The slow oxidation rate limits the lateral scale of practical wet oxidation to mesas structures of 50–100 μm in width. Therefore post-processing assessment of spect…