Search results for "etching"
showing 10 items of 186 documents
Efficacy of Three Different Prophylactic Treatments for Postoperative Nausea and Vomiting after Vitrectomy: A Randomized Clinical Trial
2019
Postoperative nausea and vomiting (PONV) after vitreoretinal surgery may potentially be associated with severe complications, such as suprachoroidal hemorrhage. The purpose of the present multicenter clinical trial (NCT02386059) was to assess the efficacy of three different prophylactic treatments for PONV after vitrectomy under local anesthesia. Patients undergoing primary vitrectomy were randomized to the control arm or to one of the treatment arms (4 mg ondansetron, 4 mg dexamethasone, combination of the two drugs). The primary outcome measure was the proportion of complete response (no nausea, no vomiting, no retching, and no use of antiemetic rescue medication) during 24 h after vitrec…
Large area strip edgeless detectors fabricated by plasma etching process
2007
This work presents the last results from large area edgeless detector, fabricated by Plasma Etching Process to reduce the conventional width of the terminating structure of position sensitive detectors to the detector rim.. A current terminating ring is used to decouple the electrical behavior of the surface from the sensitive volume within a few tens of micrometers. The detectors have been illuminated using an infrared laser and their surface scanned in order to understand their collection behavior at the cut edge. The detectors have very high efficiency up to the insensitive area which is located about 60 mum from the detector edge.
Investigation of heavy ion tracks in LiF crystals by dislocation mobility method
2008
Abstract The track damage created in LiF by swift heavy ions was studied using methods of dislocation mobility and track etching. The crystals were irradiated with Bi and Pb ions of a specific energy of 11 MeV/u at fluences between 10 7 and 10 10 cm −2 . The measurements on cross-sections cleaved parallel to the irradiated surface showed continuity of the track etching for the depth up to 70% of the ion range. In deeper layers, numerous etch pits had a flat-bottomed shape indicating the discontinuities of the track structure. At this stage, a decrease of the ion-induced effect in dislocation mobility was observed. The observed reduction of the efficiency of ion tracks as obstacles for disl…
Thin film growth into the ion track structures in polyimide by atomic layer deposition
2017
Abstract High-aspect ratio porous structures with controllable pore diameters and without a stiff substrate can be fabricated using the ion track technique. Atomic layer deposition is an ideal technique for depositing thin films and functional surfaces on complicated 3D structures due to the high conformality of the films. In this work, we studied Al2O3 and TiO2 films grown by ALD on pristine polyimide (Kapton HN) membranes as well as polyimide membranes etched in sodium hypochlorite (NaOCl) and boric acid (BO3) solution by means of RBS, PIXE, SEM-EDX and helium ion microcopy (HIM). The focus was on the first ALD growth cycles. The areal density of Al2O3 film in the 400 cycle sample was det…
MeV–GeV ion induced dislocation loops in LiF crystals
2014
Abstract Formation of prismatic dislocation loops and evolution of dislocation structure in LiF crystals irradiated with swift 238U and 36S ions of specific energy 11 MeV/u at fluences up to 1013 ions cm−2 has been investigated using chemical etching and AFM. It has been shown that prismatic dislocations are formed in the stage of track overlapping above threshold fluences Φ ≈ 109 U cm−2 and Φ ≈ 1010 S cm−2. The diameter of dislocation loops reaches 600–1000 nm for 238U ions and 200 nm for 36S ions. The dislocations created by 238U ions are arranged in rows along the direction of ion beam, whereas 36S ions create freely distributed dislocation loops each of them being oriented along the ion…
Dislocation mobility study of heavy ion induced track damage in LiF crystals
2008
Track damage created in LiF crystals by swift U, Kr, Xe and Ni ions with a specific energy of 11.1 MeV/u was studied using dislocation mobility measurements, track etching, SEM, AFM and optical microscopy. The results demonstrate continuity of etching of U tracks while discontinuities of etching are observed in the case of Xe ions. The relationship between the track structure and dislocation mobility in irradiated crystals is discussed. The dislocation mobility technique can serve as a highly sensitive method for track core damage studies.
Coating and functionalization of high density ion track structures by atomic layer deposition
2016
In this study flexible TiO 2 coated porous Kapton membranes are presented having electron multiplication properties. 800 nm crossing pores were fabricated into 50 m thick Kapton membranes using ion track technology and chemical etching. Consecutively, 50 nm TiO 2 films were deposited i nto the pores of the Kapton membranes by atomic layer deposition using Ti( i OPr) 4 and water as precursors at 250 °C. The TiO 2 films and coated membranes were studied by scanning electro n microscopy (SEM), X - ray diffraction (XRD) and X - ray reflectometry (XRR). Au metal electrod e fabrication onto both sides of the coated foils was achieved by electron beam evaporation. The electron multipliers were o…
Elektronenmikroskopische Untersuchung von Transversalschnitten d�nner Schichten auf festen Unterlagen
1969
A method is described which allows to prepare transverse sections of thin films by means of an ion etching technique so that transmission electron micrographs of the film structure can be carried out. A section through a 6-layered optical film with a total thickness of 0.62 μm is shown as an example.
Formation of dislocations in LiF irradiated with 3He and 4He ions
2018
Influence of the irradiation with 13.5 MeV 3He and 5 MeV 4He ions on the micro-structure and mechanical properties of LiF single crystals was studied. The depth profiles of nanoindentation, dislocation mobility, selective chemical etching and photoluminescence served for the characterization of damage. Strong ion-induced increase of hardness and decrease in dislocation mobility at the stage of track overlapping due to accumulation of dislocations and other extended defects was observed. At high fluences (1015 ions/cm2) the hardness saturates at about 3.5 GPa (twofold increase in comparison to a virgin crystal) thus confirming high efficiency of light projectiles in modifications of structur…
Porous silicon photoluminescence biosensor for rapid and sensitive detection of toxins
2017
A rapid and low cost photoluminescence (PL) immunosensor for the determination of low concentrations of Ochratoxin A(OTA) and Aflatoxine B1 (AfB1) has been developed. This biosensor was based on porous silicon (PSi) fabricated by metal-assisted chemical etching (MACE) and modified by antibodies against OTA/AfB1 (anti-OTA/anti-AfB1). Biofunctionalization method of the PSi surface by anti-OTA/ anti-AfB1 was developed. The changes of the PL intensity after interaction of the immobilized anti-OTA/anti-AfB1with OTA/AfB1 antigens were used as biosensor signal, allowing sensitive and selective detection of OTA/AfB1 antigens in BSA solution. The sensitivity of the reported optical biosensor towards…