Search results for "fabrication"

Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration

2016

Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different …

Fabrication of polarizing photonic crystal fibres and photonic crystal fibre tapers: Applications

2007

We report the fabrication of an anisotropic photonic crystal fibre with polarization properties and photonic crystal fibre tapers for supercontinuum generation. The anisotropy of the fibre was created by enlarging four airholes next to the silica core. Different polarization regimes as a function of the geometric parameters, including polarizing behaviour at 1.55 mum, were obtained. In the second part of the paper, we report the fabrication of photonic crystal fibre tapers. We present experimental results on supercontinuum generation in photonic crystal fibre tapers using quasi-continuous pump pulses of 7 ns duration at 532 nm and at 1064 nm.

2016

The structure–property relationship study of a series of cationic Ir(III) complexes in the form of [Ir(C^N)2(dtBubpy)]PF6 [where dtBubpy = 4,4′-di-tert-butyl-2,2′-bipyridine and C^N = cyclometallating ligand bearing an electron-withdrawing group (EWG) at C4 of the phenyl substituent, i.e., −CF3 (1), −OCF3 (2), −SCF3 (3), −SO2CF3 (4)] has been investigated. The physical and optoelectronic properties of the four complexes were comprehensively characterized, including by X-ray diffraction analysis. All the complexes exhibit quasireversible dtBubpy-based reductions from −1.29 to −1.34 V (vs SCE). The oxidation processes are likewise quasireversible (metal + C^N ligand) and are between 1.54 and …

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

2011

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm 2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster. © 2011 Optical Society of America.

Nonlinear Characterisation of an AsSe Chalcogenide Holey Fiber

2009

oral session TuA " Highly Nonlinear Fibers " [TuA1]; International audience; We report the nonlinear characterization of a chalcogenide holey fiber, based on the AsSe glass composition. A nonlinear coefficient as high as 15 000 W-1 km-1 has been measured.

Recent advances in synthesis, surface chemistry of cesium lead-free halide perovskite nanocrystals and their potential applications

2020

Abstract Cesium lead halide perovskite nanocrystals (NCs) have emerged as a key material for optoelectronic applications owing to their outstanding optical properties and easy synthesis in solution. Nowadays, the scientific community is facing a daring challenge toward the synthesis of lead-free perovskite NCs with high stability and excellent optical properties for the fabrication of optoelectronic devices with enhanced performance. In this sense, cesium lead-free halide perovskites (CsLFHPs) are demonstrated as extremely less susceptible toward oxygen and moisture and suitable candidates for long-term device applications. Thus, synthesis and identification of CsLFHP NCs essentially need u…

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

2019

This paper reports on the electrical activation and Ohmic contact properties on p-type Al-implanted silicon carbide (4H-SiC). In particular, the contacts were formed on 4H-SiC-implanted layers, subjected to three different post-implantation annealing processes, at 1675 &deg

Controlled solution-based fabrication of perovskite thin films directly on conductive substrate

2021

Abstract Organometallic perovskites are one of the most investigated materials for high-efficiency thin-film devices to convert solar energy and supply energy. In particular, methylammonium lead iodide has been used to realize thin-film perovskite solar cells, achieving an efficiency higher than 20%. Different fabrication procedures based on the spin-coating technique have been proposed, which do not ensure homogenous morphologies. In this work, we present a scalable process to fabricate methylammonium lead iodide thin films directly on conductive substrates, consisting of electrodeposition and two subsequent chemical conversions. A thorough investigation of the morphological, structural an…

Efficient Vacuum Deposited P-I-N Perovskite Solar Cells by Front Contact Optimization.

2020

Hole transport layers HTLs are of fundamental importance in perovskite solar cells PSCs , as they must ensure an efficient and selective hole extraction, and ohmic charge transfer to the corresponding electrodes. In p i n solar cells, the ITO HTL is usually not ohmic, and an additional interlayer such as MoO3 is usually placed in between the two materials by vacuum sublimation. In this work, we evaluated the properties of the MoO3 TaTm TaTm is the HTL N4,N4,N4 amp; 8243;,N4 amp; 8243; tetra [1,1 amp; 8242; biphenyl] 4 yl [1,1 amp; 8242; 4 amp; 8242;,1 amp; 8243; terphenyl] 4,4 amp; 8243; diamine hole extraction interface by selectively annealing either MoO3 prior to the deposition of TaTm o…

Formation of lead by reduction of electrodeposited PbO2: comparison between bulk films and nanowires fabrication

2012

Metallic lead was deposited, both in form of bulk films and nanowire array within pores of anodic alumina membranes, following a new two-step procedure, consisting in anodic electrodeposition of α-PbO2, followed by its reduction to metallic lead. This method allows to overcome drawbacks of the “direct” electrodeposition of lead from aqueous solution, consisting, essentially, in the formation of dendritic deposits. Here, we report the comparison between results obtained in the two cases and discuss the kinetic of oxide reduction both for films and nanowires. Deposit morphology and structure are also discussed. We have found that reduction of α-PbO2 films proceeds always at high speed and uni…