Search results for "hardening"
showing 10 items of 133 documents
Self-Healing Properties of Bioinspired Amorphous CaCO3/Polyphosphate-Supplemented Cement
2020
There is a strong interest in cement additives that are able to prevent or mitigate the adverse effects of cracks in concrete that cause corrosion of the reinforcement. Inorganic polyphosphate (polyP), a natural polymer that is synthesized by bacteria, even those on cement/concrete, can increase the resistance of concrete to progressive damage from micro-cracking. Here we use a novel bioinspired strategy based on polyP-stabilized amorphous calcium carbonate (ACC) to give this material self-healing properties. Portland cement was supplemented with ACC nanoparticles which were stabilized with 10% (w/w) Na&ndash
-ray-induced intrinsic defect processes in fluorine-doped synthetic SiO2 glasses of different fluorine concentrations
2009
Fluorine-doped synthetic SiO2 glass is suitable for investigating intrinsic defect processes in SiO2 glass because of the high radiation hardness and the low concentrations of defect precursors such as the strained Si O Si bonds and impurity-related network modifiers including SiOH, SiH, and SiCl groups. When the concentrations of the defect precursors are minimized by moderate fluorine doping into SiO2 glass, formation of oxygen vacancy–interstitial pairs (Frenkel pairs) is the primarily Co60γ-ray-induced defect process. However, heavy fluorine doping tends to degrade the radiation hardness and enhance the formation of the silicon and oxygen dangling bonds, suggesting the presence of anoth…
Assessing Radiation Hardness of SIC MOS Structures
2018
It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Optical and photonic material hardness for energetic environments
2009
We studied the effects of dielectric change in the chemical composition and in the realization procedures under radiation exposure. We have compared the radiation effects on Ge-doped and F-doped fibers and preforms: the first play a crucial role in the photosensitivity property, the second improves the dielectric radiation hardness even at low concentrations. The use of different spectroscopic techniques (RIA, OA, EPR) allow the identification of the point defect formation mechanisms at the origin of the optical degradation properties.
<title>Hardening and long-range stress effects in LiF caused by high-fluence irradiation with fast Bi, Ni, Kr, and S ions</title>
2005
The limits of the hardening, and the effects of ion-induced internal and long-range stresses in LiF crystals irradiated with Bi, Ni, Kr, and S ions, having a specific energy of the order of 10 MeV/u and the fluence up to 1013cm-2, are studied. A considerable hardness increase, bending of the crystals, formation of dislocations in distant nonirradiated parts of the crystals, and initiation of fracturing under the high-fluence irradiation are observed. It is shown that the irradiation with heavy ions (Bi) gives rise to dislocations and work hardening mainly in the region adjacent to the irradiated one. In the case of lighter ions (Ni and S), the work hardening takes place also inside the irra…
A plasticity model for predicting the rheological behavior of paperboard
2017
The sorption of water into the paperboard exposes a container to reversible and irreversible deformations under relative humidity variations. In this study, an elasto-plastic material model is used to demonstrate how through-thickness dry solids content gradients can generate permanent in-plane strains in paperboard. The measurements presented in this paper indicate that in consecutive loading-unloading cycles, the yield stress either remains roughly constant or decreases, and an additional permanent set of strain is obtained even when the maximum tension of repetitions stays constant. Two modified approaches concerning elasto-plastic hardening behavior based on the measurements of this wor…
A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites
2015
A low-power, wide temperature range, radiation tolerant CMOS voltage reference is presented. The proposed reference circuit exhibits a voltage deviation of 0.8mV for 3-MeV protons total ionization dose of 2Mrad and a voltage deviation of 3.8mV for 10-keV X-rays total ionization dose of 4Mrad while being biased at the nominal supply voltage of 0.75V during X-ray irradiation. In addition, the circuit consumes only 4μW and exhibits a measured Temperature Drift of 15ppm/°C for a temperature range of 190°C (−60°C to 130°C) at the supply voltage of 0.75V. It utilizes only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any diodes or external compon…
Elastoplastic analysis by active macro-zones with linear kinematic hardening and von Mises materials.
2014
In this paper a strategy to perform elastoplastic analysis with linear kinematic hardening for von Mises materials under plane strain conditions is shown. The proposed approach works with the Symmetric Galerkin Boundary Element Method applied to multidomain problems using a mixed variables approach, to obtain a more stringent solution. The elastoplastic analysis is carried out as the response to the loads and the plastic strains, the latter evaluated through the self-equilibrium stress matrix. This matrix is used both, in the predictor phase, for trial stress evaluation and, in the corrector phase, for solving a nonlinear global system which provides the elastoplastic solution of the active…
A thermodynamics-based formulation of gradient-dependent plasticity
1998
Abstract A nonlocal thermodynamic theoretical framework is provided as a basis for a consistent formulation of gradient-dependent plasticity in which a scalar internal variable measuring the material isotropic hardening/softening state is the only nonlocal variable. The main concepts of this formulation are: i) the ‘regularization operator’, of differential nature, which governs the relation between the above nonlocal variable and a related local variable (scalar measure of plastic strain) and confers a unified character to the proposed formulation (this transforms into a formulation for nonlocal plasticity if the regularization operator has an integral nature); ii) the ‘nonlocality residua…