Search results for "insulator"
showing 10 items of 228 documents
Organic Heterojunction Devices Based on Phthalocyanines: A New Approach to Gas Chemosensing.
2020
Organic heterostructures have emerged as highly promising transducers to realize high performance gas sensors. The key reason for such a huge interest in these devices is the associated organic heterojunction effect in which opposite free charges are accumulated at the interface making it highly conducting, which can be exploited in producing highly sensitive and faster response kinetics gas sensors. Metal phthalocyanines (MPc) have been extensively studied to fabricate organic heterostructures because of the large possibilities of structural engineering which are correlated with their bulk thin film properties. Accordingly, in this review, we have performed a comprehensive literature surve…
Molecular semiconductor-doped insulator (MSDI) heterojunctions: Oligothiophene/bisphtalocyanine (LuPc2) and perylene/bisphthalocyanine as new structu…
2010
Abstract The combination of a sexithiophene and a perylene diimide derivatives, as p-type and n-type materials, respectively, used as sub-layers, to an intrinsic semiconductor, namely the lutetium bisphthalocyanine, allows to obtain a new transducer for gas sensing. These transducers were called molecular semiconductor-doped insulator (MSDI) heterojunctions, were recently designed and reported, but with only phthalocyanines as active materials. p-Type material leads to MSDIs that exhibit a positive response to ozone and a negative response to ammonia, whereas MSDIs prepared from n-type material exhibit a positive response to ammonia and negative response to ozone. The remarkable point is th…
Precursor-based synthetic pathways to nanometer NdNiO3−x particles
1993
Abstract The oxygen deficient neodymium nickel perovskite, NdNiO3−x, has been obtained by different low temperature-low oxygen pressure synthetic procedures. Besides a solid-matrix based route, both ordered and disordered chemical-precursors have been used as starting products. X-ray powder diffraction shows that the structure of this defective perovskite is orthorhombic. The study of the grain morphology of the products as resulting from the different synthetic procedures indicates that the main parameter determining the average particle size, which is in the nanometer range, is the maximum temperature achieved in the synthesis. Resistivity and DSC measurements show the existence of a meta…
Young’s modulus and indirect morphological analysis of Bi2Se3nanoribbons by resonance measurements
2017
An electrostatically induced resonance behaviour of individual topological insulator Bi2Se3 nanoribbons grown by a catalyst free vapour-solid synthesis was studied in situ by scanning electron microscopy. It was demonstrated that the relation between the resonant frequencies of vibrations in orthogonal planes can be applied to distinguish the nanoribbons with rectangular cross-sections from the nanoribbons having step-like morphology (terraces). The average Young's modulus of the Bi2Se3 nanoribbons with rectangular cross-sections was found to be 44 ± 4 GPa.
Integrated plasmonic nanotweezers for nanoparticle manipulation.
2016
We numerically demonstrate that short gold nanoparticle chains coupled to traditional SOI waveguides allow conceiving surface plasmon-based nanotweezers. This configuration provides for jumpless control of the trapping position of a nano-object as a function of the excitation wavelength, allowing for linear repositioning. This novel feature can be captivating for the conception of compact integrated optomechanical nanoactuators.
Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films.
2015
Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.
Two-Dimensional Antimony Oxide
2020
Two-dimensional (2D) antimony, so-called antimonene, can form antimonene oxide when exposed to air. We present different types of single- and few-layer antimony oxide structures, based on density functional theory (DFT) calculations. Depending on stoichiometry and bonding type, these novel 2D layers have different structural stability and electronic properties, ranging from topological insulators to semiconductors with direct and indirect band gaps between 2.0 and 4.9 eV. We discuss their vibrational properties and Raman spectra for experimental identification of the predicted structures.
Adsorbate-Induced Oxygen Vacancy Mobility in Ultrathin Oxide Films
2013
Oxides at the nanometric scale show a behavior markedly different from that of their bulk counterparts. Ultrathin oxides grown on metals do not reach the full insulator regime, and they cannot decouple the electronic clouds of incoming adsorbates from that of the metal substrate. Although oxygen vacancies control the chemical and physical properties of ultrathin oxide films, the role of intrinsic defects has been overlooked so far. By means of density functional theory methods, we show that the addition of atoms with high electron affinity, such as Au, to ultrathin MgO grown either on a Ag or Mo support, completely reverses the preferential positions of oxygen vacancies, decreases their res…
Superconducting tantalum nitride-based normal metal-insulator-superconductor tunnel junctions
2014
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and Cu-TaO$_{x}$-TaN$_{x} $), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature $T_{\text{C}}$ of the TaN$_{x} $ film at $\sim 5$ K down to $\sim$ 0.5 K. Numerical simulations were also performe…
Dopant-controlled single-electron pumping through a metallic island
2016
We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.