Search results for "johteet"
showing 10 items of 97 documents
Energy of dendritic avalanches in thin-film superconductors
2018
A method for calculating stored magnetic energy in a thin superconducting film based on quantitative magneto-optical imaging is developed. Energy and magnetic moment are determined with these calculations for full hysteresis loops in a thin film of the superconductor NbN. Huge losses in energy are observed when dendritic avalanches occur. Magnetic energy, magnetic moment, sheet current and magnetic flux distributions, all extracted from the same calibrated magneto-optical images, are analyzed and discussed. Dissipated energy and the loss in moment when dendritic avalanches occur are related to each other. Calculating these losses for specific spatially-resolved flux avalanches is a great ad…
Microwave photoassisted dissipation and supercurrent of a phase-biased graphene-superconductor ring
2021
Irradiating normal-superconducting junctions with microwave photons produce spectacular effects, such as Shapiro steps and photoinduced modifications of the dc supercurrent. Moreover, microwave irradiation can also have other, hitherto unexplored consequences, such as a photoassisted dissipation which is phase dependent. Here we present a finite-frequency measurement of both the dissipation and the supercurrent of a phase-biased graphene-superconductor junction in response to microwave photons. We find that, while the supercurrent response is well described by existing theory, the dissipation exhibits unexpected effects which need new theoretical elucidation. Especially with high frequency …
Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes
2021
Temperature dependence of the spectral intensity of recombination radiation in a quasi-zero-dimensional structure, containing impurity complexes “A++e” (a hole localized on a neutral acceptor, interacting with an electron localized in the ground state of a quantum dot), has been investigated in an external electric field in the presence of tunneling decay of a quasistationary A+-state. Probability of dissipative tunneling of a hole has been calculated in the one-instanton approximation, and the influence of tunneling decay and of an external electric field on the A+-state binding energy and on the spectra of recombination radiation, associated with the optical transition of an electron from…
Plasmon-Induced Direct Hot-Carrier Transfer at Metal-Acceptor Interfaces.
2019
Plasmon-induced hot-carrier transfer from a metal nanostructure to an acceptor is known to occur via two key mechanisms: (i) indirect transfer, where the hot carriers are produced in the metal nanostructure and subsequently transferred to the acceptor, and (ii) direct transfer, where the plasmons decay by directly exciting carriers from the metal to the acceptor. Unfortunately, an atomic-level understanding of the direct-transfer process, especially with regard to its quantification, remains elusive even though it is estimated to be more efficient compared to the indirect-transfer process. This is due to experimental challenges in separating direct from indirect transfer as both processes o…
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
2020
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was observed in the leakage current degradation, reflecting the striped structure of the power MOSFET investigated. Two different mechanisms were observed for degradation. At low drain bias (gate and source grounded), only the gate-oxide (at the JFET or neck region) is contributing in the ion-induced leakage current. For exposures at drain–source bias voltages higher than a specific threshold, additional higher drain leakage current is observed in t…
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
2021
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed fail…
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
2022
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. The results were comparable, although the data may indicate a marginally lower thresholds for the isotopic enriched devices at lower linear energy transfer (LET). Slightly higher reverse bias threshold values for leakage current degradation were also observed compared to previously published work.
Moir\'e with flat bands is different
2019
Recent experimental discoveries of superconductivity and other exotic electronic states in twisted bilayer graphene (TBG) call for a reconsideration of our traditional theories of these states, usually based on the assumption of the presence of a Fermi surface. Here we show how such developments may even help us finding mechanisms of increasing the critical temperature of superconductivity towards the room temperature.
Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation
2017
Dimethylaluminum chloride (DMACl) as an aluminum source has shown promising potential to replace more expensive and commonly used trimethylaluminum in the semiconductor industry for atomic layer deposited (ALD) thin films. Here, the Al2O3 DMACl-process is modified by replacing the common ALD oxidant, water, by ozone that offers several benefits including shorter purge time, layer-by-layer growth, and improved film adhesion. It is shown that the introduction of the ozone instead of water increases carbon and chlorine content in the Al2O3, while long ozone pulses increase the amount of interfacial hydrogen at silicon surface. These are found to be beneficial effects regarding the surface pass…
Quasiclassical free energy of superconductors : Disorder-driven first-order phase transition in superconductor/ferromagnetic-insulator bilayers
2020
In the seminal work by G. Eilenberger, Z. Phys. 214, 195 (1968), a closed-form expression for the free energy of inhomogeneous spin-singlet superconductor in terms of quasiclassical propagators has been suggested. However, deriving this expression and generalizing it for superconductors or superfluids with general matrix structure, e.g., spin-triplet correlations, has remained problematic. Starting from the Luttinger-Ward formulation, we discuss here the general solution. Besides ordinary superconductors with various scattering mechanisms, the obtained free-energy functional can be used for systems, such as superfluid $^{3}\mathrm{He}$ and superconducting systems with spatially inhomogeneou…