Search results for "kalvot"
showing 10 items of 90 documents
A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
2020
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1-1.4 angstrom/cycle for substrate tempe…
Early entry events in Echovirus 30 infection
2020
Echovirus 30 (E30), a member of the enterovirus B species, is a major cause of viral meningitis, targeting children and adults alike. While it is a frequently isolated enterovirus and the cause of several outbreaks all over the world, surprisingly little is known regarding its entry and replication strategy within cells. In this study, we used E30 strain Bastianni (E30B) generated from an infectious cDNA clone in order to study early entry events during infection in human RD cells. E30B required the newly discovered Fc echovirus receptor (FcRn) for successful infection, but not the coxsackievirus and adenovirus receptor (CAR) or decay-accelerating factor (DAF), although an interaction with …
In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres
2019
Tarkista embargo, kun artikkeli julkaistu. Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex…
Extracellular vesicles provide a capsid-free vector for oncolytic adenoviral DNA delivery
2020
Extracellular vesicles (EVs) have been showcased as auspicious candidates for delivering therapeutic cargo, including oncolytic viruses for cancer treatment. Delivery of oncolytic viruses in EVs could provide considerable advantages, hiding the viruses from the immune system and providing alternative entry pathways into cancer cells. Here we describe the formation and viral cargo of EVs secreted by cancer cells infected with an oncolytic adenovirus (IEVs, infected cell-derived EVs) as a function of time after infection. IEVs were secreted already before the lytic release of virions and their structure resembled normally secreted EVs, suggesting that they were not just apoptotic fragments of…
Compensatory IgM to the Rescue: Patients with Selective IgA Deficiency Have Increased Natural IgM Antibodies to MAA-LDL and No Changes in Oral Microb…
2021
Abstract IgA is the most abundant Ab in the human body. However, most patients with selective IgA deficiency (SIgAD) are asymptomatic. IgM, and to lesser extent IgG Abs, are generally presumed to compensate for the lack of IgA in SIgAD by multiplying and adopting functions of IgA. We used data from the Northern Finland Birth Cohort 1966 to investigate whether SIgAD patients have differences in levels of natural Abs to oxidized epitopes compared with 20 randomly selected healthy controls. First, we screened the saliva and serum samples from the Northern Finland Birth Cohort 1966 cohort (n = 1610) for IgA concentration. We detected five IgA-deficient subjects, yielding a prevalence of 0.3%, w…
Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films
2020
Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
Atomic layer deposition of Ti-Nb-O thin films onto electrospun fibers for fibrous and tubular catalyst support structures
2018
Here, the authors report on the preparation of core-shell carbon-ceramic fibrous as well as ceramic tubular catalyst supports utilizing electrospinning and atomic layer deposition (ALD). In this paper, ALD of Ti-Nb-O thin films using TiCl4, Nb(OEt)5, and H2O as precursors is demonstrated. According to the time-of-flight-elastic recoil detection analysis and Rutherford backscattering spectrometry, carbon and hydrogen impurities were relatively low, but depend on the pulsing ratio of the precursors. Optimized ALD process was used for coating of sacrificial electrospun polyvinyl alcohol (PVA) template fibers to yield tubular Ti-Nb-O structures after thermal or solution based PVA removal. Anoth…
Reaction pathways for atomic layer deposition with lithium hexamethyl disilazide, trimethyl phosphate, and oxygen plasma
2020
Atomic layer deposition (ALD) of lithium-containing films is of interest for the development of next-generation energy storage devices. Lithium hexamethyl disilazide (LiHMDS) is an established precursor to grow these types of films. The LiHMDS molecule can either be used as a single-source precursor molecule for lithium or as a dual-source precursor molecule for lithium and silicon. Single-source behavior of LiHMDS is observed in the deposition process with trimethylphosphate (TMP) resulting in the deposition of crystalline lithium phosphate (Li3PO4). In contrast, LiHMDS exhibits dual-source behavior when combined with O2 plasma, resulting in a lithium silicate. Both processes were characte…
Phosphites as precursors in atomic layer deposition thin film synthesis
2021
We here demonstrate a new route for deposition of phosphorous based materials by atomic layer deposition (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain phosphorous in the oxidation state (III) and are open for deposition of reduced phases by ALD. We have investigated their applicability for the synthesis of LiPO and AlPO materials and characterized their growth by means of in situ quartz crystal microbalance. Phosphites are good alternatives to the established phosphate-based synthesis routes as they have high vapor pressure and are compatible with water as a coreactant during deposition. The deposited materials have been characterized using XPS, x-ray fluorescence…
Domain wall induced modulation of low field H-T phase diagram in patterned superconductor-ferromagnet stripes
2019
We present a systematic study of the magnetic domain wall induced modulation of superconducting transition temperature (Tc) in Nb/Ni bilayer stripes. By varying the thickness of the Ni layer from 20 nm to 100 nm we have been able to measure the low field Tc-H phase diagram spanning the Neel domain wall and Bloch domain wall range of thicknesses. Micromagnetic simulations and magnetic force microscopy measurements confirmed a stronger out-of-plane stray field in the Bloch domain walls compared to the Neel walls. A suppression in Tc was observed in the magnetization reversal region of the Ni film, the magnitude of which followed linearly to the strength of the out-of-plane stray field due to …