Search results for "layer"
showing 10 items of 2667 documents
Isolated Mn-12 single-molecule magnets grafted on gold surfaces via electrostatic interactions
2005
Electrostatic interactions drive the adsorption of polycationic single-molecule magnets onto anionic monolayers self-assembled on gold surfaces. Well-isolated magnetic clusters have been deposited and characterized using scanning tunneling microscopy and X-ray photoemission spectroscopy.
Photoluminescence immunosensor based on bovine leukemia virus proteins immobilized on the ZnO nanorods
2019
Bovine leukaemia virus (BLV) proteins gp51, which are serving as antigens for specific antibodies against BLV proteins (anti-gp51), were applied as biological recognition part in the design of immunosensor devoted for the determination of anti-gp51. The efficiency of the immobilization of BLV proteins gp51 on ZnO nanorod (ZnO- NR) modified glass (ZnO-NR/glass) surface was evaluated. The formation of antigen-antibody complex on the ZnO/glass modified by the BLV proteins gp51 (gp51/ZnO-NR/glass) was investigated by the determination of changes in ZnO photoluminescence. The applicability of gp51/ZnO-NR/glass in the design of photoluminescence based immunosensor was evaluated. Bovine serum albu…
White Light-Emitting Electrochemical Cells Based on the Langmuir–Blodgett Technique
2014
Light-emitting electrochemical cells (LECs) showing a white emission have been prepared with Langmuir-Blodgett (LB) films of the metallosurfactant bis[2-(2,4-difluorophenyl)pyridine][2-(1-hexadecyl-1H-1,2,3-triazol-4-yl)pyridine]iridium(III) chloride (1), which work with an air-stable Al electrode. They were prepared by depositing a LB film of 1 on top of a layer of poly(N,N'-diphenyl-N,N'-bis(4-hexylphenyl)-[1,1'-biphenyl]-4,4'-diamine (pTPD) spin-coated on indium tin oxide (ITO). The white color of the electroluminescence of the device contrasts with the blue color of the photoluminescence of 1 in solution and within the LB films. Furthermore, the crystal structure of 1 is reported togeth…
Type II narrow double barrier quantum well structures : Γ-X coupling and interface effects
1993
Photoluminescence (PL), PL excitation and time resolved PL experiments have been performed on Al0.42Ga0.58As/AlAs/GaAs symmetric double barrier quantum wells (DBQW) with only one or two AlAs monolayers constituting the intermediate barriers. In agreement with the envelope function predictions we show that such DBQW's undergo a type I - type II transition when the GaAs thickness is reduced below 7 and 5 monolayers for 2 and 1 AlAs molecular planes respectively. In type II configuration the PL decay time is found to be strongly dependent on the energy difference between AlAs Xz - and GaAs Γ - electron confined states and the coupling parameter of the Γ and Xz valleys can be deduced (4.2 meV o…
Different temperature renormalizations for heavy and light-hole states of monolayer-thick heterostructures
2000
Abstract We have found that the energy splitting between peaks in the linearly polarized emission from the cleaved surface of an InAs/GaAs monolayer structure triples with increasing temperature in the range from 5 to 150 K. For each polarization the main emission line corresponds to the radiative recombination of either heavy or light-hole excitons bound to the monolayer. The striking temperature behavior of the peak energies originates from the different hole–phonon coupling due to the much larger penetration of the light-hole envelope function into the GaAs. We prove this assertion by confining the light holes to the InAs plane with a strong magnetic field, which leads to a reduction of …
Carrier recombination in InAs/GaAs self-assembled quantum dots under resonant excitation conditions
2002
5 páginas, 4 figuras.-- PACS: 73.21.La;73.63.Kv;78.55.Cr;78.67.Hc;S7.12.-- Trabajo presentado en la 7th International Conference on Optics and Excitons in Confined Systems (OECS7).
Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires
2001
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.
Study on Structural, Mechanical, and Optical Properties of Al2O3–TiO2 Nanolaminates Prepared by Atomic Layer Deposition
2015
Structural, optical, and mechanical properties of Al2O3/TiO2 nanolaminates fabricated by atomic layer deposition (ALD) were investigated. We performed transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray reflectivity (XRR), energy dispersive X-ray spectroscopy (EDX), ellipsometry, UV–vis spectroscopy, photoluminescence (PL) spectroscopy, and nanointendation to characterize the Al2O3/TiO2 nanolaminates. The main structural, optical, and mechanical parameters of Al2O3/TiO2 nanolaminates (thickness, grain size, refractive index, extinction coefficient, band gap, hardness, and Young’s module) were calculated. It was established that with decreasing of the layer thickness, the …
Structural and optical properties of TiO2–Al2O3nanolaminates produced by atomic layer deposition
2015
Structural and optical properties of Al2O3/TiO2 nanolaminates fabricated by atomic layer deposition (ALD) were investigated. We performed Raman spectroscopy, transmission electron microscopy (TEM), X-Ray reflectivity (XRR), UV-Vis spectroscopy, and photoluminescence (PL) spectroscopy to characterize the Al2O3/TiO2 nanolaminates. The main structural and optical parameters of Al2O3/TiO2 nanolaminates were calculated. It was established that with decreasing of the layer thickness, the value of band gap energy increases due to the quantum size effect related to the reduction of the nanograins size. It was also shown that there is an interdiffusion layer at the Al2O3/TiO2 interface which plays a…
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…