Search results for "memorie"

showing 10 items of 54 documents

Ionizing radiation effects on Non Volatile Read Only Memory cells

2012

Threshold voltage (V-th) and drain-source current (I-DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V-th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I-DS with the total irradiation dose. A brief physical explanation is also provided.

Nuclear and High Energy PhysicsPhotonMaterials sciencebusiness.industrynitride read-only memories (NROM)Nitrideradiation hardnessFlash memoriesFlash memoryIonizing radiationThreshold voltageIonoxide/nitride/oxide (ONO)Terms—Flash memories nitride read-only memories (NROM) oxide/nitride/oxide (ONO) radiation hardness.Nuclear Energy and EngineeringOptoelectronicsIrradiationElectrical and Electronic EngineeringbusinessRadiation hardening
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Being Moved by Unfamiliar Sad Music Is Associated with High Empathy

2016

The paradox of enjoying listening to music that evokes sadness is yet to be fully understood. Unlike prior studies that have explored potential explanations related to lyrics, memories, and mood regulation, we investigated the types of emotions induced by unfamiliar, instrumental sad music, and whether these responses are consistently associated with certain individual difference variables. One hundred and two participants were drawn from a representative sample to minimize self-selection bias. The results suggest that the emotional responses induced by unfamiliar sad music could be characterized in terms of three underlying factors: Relaxing sadness, Moving sadness, and Nervous sadness. Re…

PREFERENCEPoison controlEmotional contagionAUTOBIOGRAPHICAL MEMORIES0302 clinical medicineindividual differencesbeing movedPsychologyGeneral Psychologyta515media_commonOriginal ResearchPERSONALITY05 social sciencesbeing moved3142 Public health care science environmental and occupational healthSadnessEMOTIONSFeelingta6131behavior and behavior mechanismsPsychologySocial psychologysadnesspsychological phenomena and processes515 Psychologymedia_common.quotation_subjectlcsh:BF1-990musiikkiENJOYMENTemotionEmpathyINDIVIDUAL-DIFFERENCESbehavioral disciplines and activities050105 experimental psychology03 medical and health sciencestunteetempatiamental disorders0501 psychology and cognitive sciencesmusicValence (psychology)empathyindividual differencesAutobiographical memoryfelt experienceNEGATIVE AFFECTMoodlcsh:Psychologyfelt experiencesMOODEXPERIENCE030217 neurology & neurosurgeryFrontiers in Psychology
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Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions

2008

Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities in terms of pattern dependence and annealing. We also illustrate single event functional interruptions, which lead to errors during erase and program operations. To account for all the phenomena we observe during and after irradiation, we propose an ldquoeffective cross section,rdquo which takes into account the array and peripheral circuitry contributions to the SEU sensitivity, as well as the operating conditions.

PhysicsNuclear and High Energy PhysicsHardware_MEMORYSTRUCTURESNAND FlashNAND gateHardware_PERFORMANCEANDRELIABILITYsingle event effectsHeavy ion irradiationradiation effects; single event effects; Floating gate memories; NAND FlashIonNuclear Energy and EngineeringGate arrayFloating gate memoriesradiation effectsElectronic engineeringIrradiationElectrical and Electronic EngineeringIEEE Transactions on Nuclear Science
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Direct evidence of secondary recoiled nuclei from high energy protons

2008

The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions. © 2006 IEEE.

PhysicsNuclear reactionNuclear and High Energy Physicsbusiness.industryDirect evidencePhysics::Instrumentation and DetectorsMonte Carlo methodNAND gatechemistry.chemical_elementHigh energy protonsSingle event effectsTungstenFlash memorySpace radiationNuclear physicsRecoilNuclear Energy and EngineeringchemistryFloating gate memoriesMicroelectronicsElectrical and Electronic EngineeringAtomic physicsbusinessNuclear Experiment
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Radiation effects in nitride read-only memories

2010

Abstract We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remai…

Radiation effectDEVICERadiationNitrideNONVOLATILE MEMORYmemorieX-raygamma-rayIrradiationElectrical and Electronic EngineeringSafety Risk Reliability and QualityNROMHEAVY-ION EXPOSURELeakage (electronics)business.industryChemistrySubthreshold conductionElectrical engineeringX-rayCondensed Matter PhysicsRadiation effectlight ionsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsThreshold voltageCELLSOptoelectronicsbusinessMicroelectronics Reliability
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L'ape iblea dalla zagara all'edelweiss.Miscellanea per Giovanni Saverio Santangelo

2020

Il volume raccoglie testimonianze e scritti in memoria di Giovanni Saverio Santangelo, comparatista e francesista.

Settore L-FIL-LET/14 - Critica Letteraria E Letterature ComparateSettore L-LIN/03 - Letteratura FranceseComparative Literature Memories Literary StudiesSettore L-LIN/10 - Letteratura Inglese
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L'immaginazione degli archivi Il cinema delle memorie amatoriali

2011

Settore L-FIL-LET/14 - Critica Letteraria E Letterature Comparatearchivicinemamemorie amatoriali
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Diálogo con la memoria: Memorias de un desmemoriado de Galdós

2004

Settore L-LIN/05 - Letteratura SpagnolaBenito Pérez Galdós memorie letteratura spagnola
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The necessary memory: The Vida Literaria of Joaquín Lorenzo Villanueva

2012

La Vida literaria de Joaquín Lorenzo Villanueva (1825) se incluye en las llamadas literaturas del yo y el género autobiográfico, aunque con las limitaciones propias de la época en cuanto al tratamiento de la intimidad. Texto de carácter político y religioso que, según el autor, nace para reconstruir una época decisiva en el devenir de la revolución liberal española; y que aprovecha para justificar su cambio de postura, desde el conservadurismo a la defensa de un gobierno representativo, adscribiéndose con ello a las memorias políticas justificativas. Pero también, un documento necesario en el que a pesar de las parcialidades e intereses, persiste el empeño de revisar para entender y buscar …

Vida literariarevolución liberal españolaintellectual exilePhilosophyexilio intelectualJoaquín Lorenzo VillanuevaGeneral MedicineExiliatsHistòria contemporània S.XIXCortes de CádizmemoriesautobiografíaSpanish liberal revolutionmemoriasIntel·lectualsHumanitiesAutobiografiaautobiography
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La giustizia senza commi: nota a Cass. Civ., 11 marzo 2016, n. 4767

2016

appendice di trattazione scrittaMemorie ex art. 183 comma 6 c.p.c.; appendice di trattazione scrittaMemorie ex art. 183 comma 6 c.p.c.Settore IUS/15 - Diritto Processuale Civile
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