Search results for "mesoscopic"
showing 10 items of 709 documents
Deformation profile in GaN quantum dots: Medium-energy ion scattering experiments and theoretical calculations
2005
Medium energy ion scattering (MEIS) has been used to measure at the scale of the monolayer the deformation profile of self-organized GaN quantum dots grown on AlN by molecular-beam epitaxy. The effect of capping the GaN dots by a thin layer of AlN has also been studied. It is shown that GaN dots are partially relaxed in every situation. Capping them with AlN has little effect on the basal plane, as expected, but strongly modifies the strain of the upper part of dots. The experimental results are compared with theoretical calculations, allowing one to conclude that GaN quantum dots experience a nonbiaxial strain, which drastically decreases when going from the basal plane up to the apex of t…
Electronic cooling and hot electron effects in heavily doped silicon-on-insulator film
2004
The influence of carrier concentration in silicon-on-insulator film on the thermal characteristics of semiconductor and performance of the superconductor-semiconductor-superconductor micro-coolers have been investigated at sub kelvin temperatures. The overheating of the lattice in heavily doped silicon film must be taken into account in the analysis of electron-phonon coupling experiment and operation of the cooler device. The heat flow between electrons and phonons in heavily doped silicon films is found to be proportional to T6, which is in accordance with theoretical prediction for dirty limit. Increasing the doping level in the semiconductor considerably increases both the efficiency of…
Phonon dispersion in GaN/AlN non‐polar quantum wells: confinement and anisotropy
2007
We have calculated the phonon dispersion relations in a non-polar GaN/AlN quantum well within the dielectric continuum model and making use of Loudon's model of uniaxial crystals. Due to the strong in-plane anisotropy of this orientation, we have found that in general ordinary and extraordinary phonons are not decoupled. In this work we analyze the conditions for the occurrence of interface modes. In these novel heterostructures there is an added dependence of the phonon dispersion on the orientation of the in-plane phonon wavevector, which allows the existence of interface phonons at energies forbidden in the better known polar structures. Under particular circumstances the vibrations exci…
A physical description of fractional-order Fourier diffusion
2014
In this paper the authors introduce a physical picture of anomalous heat transfer in rigid conductor. The analysis shows that a fractional-order Fourier transport is obtained by the analysis of the heat transport in a functionally graded conductor. The order of the fractional-type operator obtained is related to the grading of the physical properties of the conductor.
Carbon nanotubes under electron irradiation: Stability of the tubes and their action as pipes for atom transport
2005
The production and migration of carbon interstitials in carbon nanotubes under electron irradiation is studied experimentally and theoretically. It is shown that the threshold for displacing carbon atoms and the defect production rate strongly depend on the diameter of the nanotubes. Multiwalled nanotubes shrink by a loss of atoms and by diffusion of interstitials through the inner hollow in the axial direction. Thus, experimental evidence is given that nanotubes can act as nanoscale pipes for the transport of atoms.
Charge and spin photocurrents in the Rashba model
2017
In metallic noncentrosymmetric crystals and at surfaces the response of spin currents and charge currents to applied electric fields contains contributions that are second order in the electric field, which are forbidden by symmetry in centrosymmetric systems. Thereby, photocurrents and spin photocurrents can be generated in inversion asymmetric metals by the application of femtosecond laser pulses. We study the laser-induced charge current in the ferromagnetic Rashba model with in-plane magnetization and find that this \textit{magnetic photogalvanic effect} can be tuned to be comparable in size to the laser-induced photocurrents measured experimentally in magnetic bilayer systems such as C…
Fabrication and characterization of small tunnel junctions through a thin dielectric membrane
1998
We show that a small tapered hole through a thin silicon nitride membrane provides a mask for tunnel junction structures. Our experiments imply, unlike in the conventional planar electron beam lithography, that tunnel junctions are well voltage biased in this structure with vanishingly small on-chip impedance. Our technique allows fabrication of double junctions, and even multijunction linear arrays, with small metallic islands in between.
Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
2009
5 páginas, 5 figuras.
Depolarization Field in Thin Ferroelectric Films With Account of Semiconductor Electrodes
2005
Within the framework of the phenomenological Ginzburg-Landau theory influence of semiconductor electrodes on the properties of thin ferroelectric films is considered. The contribution of the semiconductor electrodes with different Debye screening length of carriers is included in the functional of free energy. The influence of highly doped semiconductor electrodes on the depolarization field and the film properties was shown to be great.
The effects of the intense laser field on donor impurities in a cylindrical quantum dot under the electric field
2011
Abstract For different nitrogen and indium concentrations, intense laser field (ILF) effect on donor impurity binding energy in a cylindrical Ga x In 1 − x N y As 1 − y / GaAs quantum dot (QD) has been studied. Results show that ILF creates an additional confinement on the electronic and impurity states in QD and increases nitrogen and indium concentration effects on electronic states.