Search results for "microfabrication"
showing 10 items of 65 documents
Dislocation mobility study of heavy ion induced track damage in LiF crystals
2008
Track damage created in LiF crystals by swift U, Kr, Xe and Ni ions with a specific energy of 11.1 MeV/u was studied using dislocation mobility measurements, track etching, SEM, AFM and optical microscopy. The results demonstrate continuity of etching of U tracks while discontinuities of etching are observed in the case of Xe ions. The relationship between the track structure and dislocation mobility in irradiated crystals is discussed. The dislocation mobility technique can serve as a highly sensitive method for track core damage studies.
Elektronenmikroskopische Untersuchung von Transversalschnitten d�nner Schichten auf festen Unterlagen
1969
A method is described which allows to prepare transverse sections of thin films by means of an ion etching technique so that transmission electron micrographs of the film structure can be carried out. A section through a 6-layered optical film with a total thickness of 0.62 μm is shown as an example.
Silicon Nanocrystals Produced by Nanosecond Laser Ablation in an Organic Liquid
2011
Small (3−5 nm in diameter following HRTEM images) Si nanocrystals were produced in a two-stage process including (1) nanosecond laser ablation of a Si target in an organic liquid (chloroform) that results in formation of big composite polycrystalline particles (about 20−100 nm average diameter) and (2) ultrasonic post-treatment of Si nanoparticles in the presence of HF. The post-treatment is responsible for disintegration of the composite Si particles, release of small individual nanocrystals, and reduction of their size due to HF-induced etching of Si oxide. The downshift and broadening of the ∼520 cm−1 Raman phonon band of the small Si nanocrystals with respect to the bulk Si Raman band i…
Strong etching formulation (time and rate) for PADC with deep depth bulk etch rate study
2021
Abstract Aqueous NaOH with ethanol (strong) etchant is widely used. It shortens etching time effectively compared to normal etching conditions (6.25N NaOH at 70 °C). Two equations have been proposed to calculate the etching time with NaOH molarity and ethanol volume. Another two empirical equations were introduced for estimating the bulk etch rates of PADC etched in strong etchant. Up to now, there were no such equations available in the literature that can predict etching time and V b of PADC with etchant molarity and ethanol volumes. The proposed equations were compared to fundamental V b models stemming from literature. Fast etching enables the follow-up of bulk etch rate variation versu…
Effects of different etching strategies on the microtensile repair bond strength of beautifil II giomer material
2018
Background Considering the differences in the filler particles between giomer and conventional composite resins and the importance of these fillers in the repair bond strength, the aim was to evaluate the effects of different etching strategies with phosphoric acid (PA) and hydrofluoric acid (HF) on the microtensile repair bond strength (µTRBS) of giomer. Material and Methods Ten giomer blocks were randomly assigned into 10: 1) control; 2) 37%PA-20s; 3) 3%HF-20s; 4) 3%HF-120s; 5) 9.6%HF-20s; 6) 9.6%HF-120s; 7) 37%PA-20s + 3%HF-120s; 8) 37%PA-20s + 9.6%HF-120s; 9) 3%HF-120s + 37%PA-20s; 10) 9.6%HF-120s + 37%PA-20s. In all groups, the One-Step Plus bonding system was applied and the new giome…
Nanoscale etching of III-V semiconductors in acidic hydrogen peroxide solution: GaAs and InP, a striking contrast in surface chemistry
2019
In this study of nanoscale etching for state-of-the-art device technology, the importance of surface chemistry, in particular the nature of the surface oxide, is demonstrated for two III-V materials. Striking differences in etching kinetics were found for GaAs and InP in sulphuric and hydrochloric acidic solutions containing hydrogen peroxide. Under similar conditions, etching of GaAs was much faster, while the dependence of the etch rate on pH, and on H2O2 and acid concentrations also differed markedly for the two semiconductors. Surface analysis techniques provided information on the product layer present after etching: strongly non-stoichiometric porous (hydr)oxides on GaAs and a thin st…
Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid
2007
Abstract HF acid attack of SiO2 and Si3N4 substrates is analyzed to improve the sensitivity of a sensor based on microcantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO2 and Si3N4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO2 and Si3N4 layer, respectively. The linear dependence between the HF concentration and the Si3N4 cantilever bending corresponds to a deep attack of the layer whereas the non-linear behavior observed for SiO2 layer can be explained by a combination of deep and lateral etching. The ca…
A fully planar approach to the construction of X-Ray microcalorimeters with doped Germanium sensors
2008
We have investigated a fully planar technology for the development of arrays of X-ray microcalorimeters with doped germanium thermal sensor. We describe the proposed approach and show promising results obtained with the deep etching of germanium, the most critical step of the whole process.
Evaluation of bond strength of orthodontic brackets without enamel etching
2015
Background: to compare the shear bond strength of brackets with and without enamel etching. Material and Methods: In this study, 60 sound premolars were randomly divided into four different groups: 1- TXE group: Enamel etching + Transbond XT adhesive + Transbond XT composite. 2- TXS group: Transbond plus self-etch adhesive + Transbond XT composite. 3- PQ1E group: Enamel etching + PQ1 adhesive + Transbond XT composite. 4- PQ1 group: PQ1 adhesive + Transbond XT composite. The shear bond strengths of brackets were evaluated using universal testing machine at cross head speed of 0.5 mm/ min. The Adhesive Remnant Index (ARI) was also measured. One-way ANOVA, Tukey’s post hoc, Kruskal-wallis and …
Specificity and Sensitivity Characterization of a Gallium Arsenide Resonant Bio-Sensor
2018
International audience; The characterization of the performances of a Gallium Arsenide (GaAs) based biosensor, in terms of sensitivity and specificity, is reported. The design of the sensor consists in a resonant membrane fabricated in GaAs crystal that operates at shear modes of bulk acoustic waves generated by lateral field excitation. The transducer element was fabricated by using typical clean room microfabrication techniques. The backside of the membrane is functionalized by a self-assembled monolayer (SAM) of alkanethiols to immobilize bio-receptors, which will allow the specific capture of the analyte of interest. The theoretical sensitivity of the sensor had been determined by model…