Search results for "molecular beam epitaxy"
showing 10 items of 73 documents
Preparation and structural analysis of Fe2+xTi1−x thin films in the C14 Laves phase stability range
2002
Abstract We report the epitaxial growth of single phase (0 0 1)-oriented thin films of Fe2+xTi1−x in the C14 Laves phase stability range using molecular beam epitaxy (MBE). The growth was studied by reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD). The onset temperature for epitaxial growth and the temperature range for improved crystalline coherence were identified. From X-ray reflectometry analysis the rms roughness was estimated to 0.5 nm for typical film thicknesses of 22 nm. As revealed by scanning tunneling microscopy (STM), this roughness is discrete and due to step edges corresponding to the full c-axis length of Fe2Ti. The epitaxial growth implies an …
Molecular dynamics simulation of epitaxial growth of the Si(001) surface
1988
Abstract Molecular beam epitaxy on a Si(100) substrate has been studied using a molecular dynamics method with the Stillinger-Weber model potential. At high substrate temperature, 800 K, well ordered crystalline layers are found to grow underneath an amorphous overlayer of approximately 5 A thick. A limiting temperature for epitaxial growth is found to be 480 K, below which the growth does not produce ordered layers. When the sample deposited below 480 K is heated up to 800 K and the deposition is started again the original adatoms start to form ordered atomic layers. Thus the collisions of the deposited atoms in addition to the substrate temperature seem to play an essential role in the gr…
Solar blind detectors based on AlGaN grown on sapphire
2005
Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an optimization of the material crystalline quality (including the suppression of cracks) and of the process. We show that the spectral limitations of MSM detectors are dictated by intrinsic phenomena that are analysed in details while the responsivity and detectivity also depends on the technological process with a special emphasis on the geometry of finger and contact pads. One and two dimensional arrays have been fabricated and preliminary re…
Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution
2007
6 páginas, 5 figuras. In this work we explore the first stages of quantum wire (QWR) formation studying the evolution of the growth front for InAs coverages below the critical thickness, θc, determined by reflection high energy electron diffraction (RHEED). Our results obtained by in situ measurement of the accumulated stress evolution during InAs growth on InP(001) show that the relaxation process starts at a certain InAs coverage θRθR this ensemble of isolated nanostructures progressively evolves towards QWRs that cover the whole surface for θ = θc. These results allow for a better understanding of the self-assembling process of QWRs and enable the study of the individual properties of In…
Interface transparency and proximity effect in Nb/Cu triple layers realized by sputtering and molecular beam epitaxy
2004
We have investigated, in the framework of the proximity effect theory, the interface transparency T between Nb and Cu in the case of high quality Nb/Cu trilayers fabricated by molecular beam epitaxy (MBE) and sputtering deposition techniques. The obtained T values do not seem to be strongly influenced by the fabrication methods but more by the intrinsic properties of the two metals; a slightly higher value for T has even been deduced for the MBE prepared samples. The proximity effect in these samples has also been studied in the presence of an external magnetic field. In the parallel configuration a significant shift towards lower values of the 2D–3D crossover temperature has been observed …
Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
2006
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the smallring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
Epitaxial growth of molybdenum on TiO2(110)
2003
Abstract Molybdenum was deposited on blue (i.e. non-stoichiometric) TiO2(1 1 0) surface using a very low deposition rate (less than 0.05 eqML min−1). The resulting deposit was investigated by means of X-ray photoelectron diffraction (XPD), LEED and XPS. Just after deposition, the film is mainly constituted of metallic molybdenum, contains oxygen homogeneously dispersed through the whole deposit and the broad features detected in XPD scans are interpreted as a coarse epitaxy between TiO2(1 1 0) surface and the (0 0 1) face of bcc molybdenum. The orientation relationship is: Mo(1 0 0)[0 0 1]//TiO2(1 1 0)[0 0 1]. After annealing the deposit at 673 K, XPD scans become sharper and epitaxy is ach…
Effect of kinks and concerted diffusion mechanisms on mass transport and growth on stepped metal surfaces
1997
Abstract We study the effect of kinks and concerted atomic mechanisms on diffusion processes relevant to metal-on-metal homoepitaxy on fcc metal surfaces vicinal to the fcc (100) direction. First, we carry out extensive finite-temperature molecular dynamics simulations based on the effective medium theory to search for diffusion mechanisms that dominate the mass transport perpendicular and parallel to step edges. Then, the energetics of these processes are studied by ground state calculations. Our results show that kinks play an important role for diffusion both across and along step edges. In particular, the combined effect of kinks and concerted exchange is found to be able to remove loca…
The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes.
2021
Abstract The spontaneous growth of GaN nanowires (NWs) in absence of catalyst is controlled by the Ga flux impinging both directly on the top and on the side walls and diffusing to the top. The presence of diffusion barriers on the top surface and at the frontier between the top and the sidewalls, however, causes an inhomogeneous distribution of Ga adatoms at the NW top surface resulting in a GaN accumulation in its periphery. The increased nucleation rate in the periphery promotes the spontaneous formation of superlattices in InGaN and AlGaN NWs. In the case of AlN NWs, the presence of Mg can enhance the otherwise short Al diffusion length along the sidewalls inducing the formation of AlN …
Hybrid multiple diffraction in semipolar wurtzite materials: (\bf 01\overline{1}2)-oriented ZnMgO/ZnO heterostructures as an illustration
2017
X-ray diffraction has been widely used to characterize the structural properties (strain and structural quality) of semiconductor heterostructures. This work employs hybrid multiple diffraction to analyzer-oriented Zn1−xMgxO layers grown by molecular beam epitaxy on ZnO substrates. In such a low-symmetry material system, additional features appear in symmetric reflection scans, which are described as arising from hybrid multiple diffraction. First, the Bragg conditions necessary for these high-order processes to occur are introduced and applied to explain all the observed satellite reflections, identify the planes that contribute and computea priorithe angles at which they are observed. Fur…