Search results for "nuclear energy"
showing 10 items of 614 documents
ISTTOK tokamak plasmas influence on a liquid gallium jet dynamic behavior
2011
Abstract The main concern in using free flowing liquid metals in fusion devices is related to their interaction with magnetic fields. On ISTTOK tokamak, liquid gallium jets are injected deep into the plasma along a vertical direction. The influence of the plasma interaction on the jet has been investigated monitoring the liquid metal behavior using a fast frame camera. A radial shift on its trajectory has been detected and found to depend on the toroidal magnetic field magnitude and principally on the plasma position within the chamber. The analysis performed to understand the dynamics of the jet perturbation by the plasma is presented in this paper. The jet surface temperature increase dur…
Accumulation of radiation defects and products of radiolysis in lithium orthosilicate pebbles with silicon dioxide additions under action of high abs…
2012
Abstract One of the technological problems of a fusion reactor is the change in composition and structure of ceramic breeders (Li 4 SiO 4 or Li 2 TiO 3 pebbles) during long-term operation. In this study changes in the composition and microstructure of Li 4 SiO 4 pebbles with 2.5 wt% silicon dioxide additions, fabricated by a melt-spraying process, were investigated after fast electron irradiation ( E = 5 MeV, dose rate up to 88 MGy h −1 ) with high absorbed dose from 1.3 to 10.6 GGy at high temperature (543–573 K) in air and argon atmosphere. Three types of pebbles with different diameters and grain sizes were investigated. Products of radiolysis were studied by means of FTIR and XRD. TSL …
Radiation-induced effects in neutron- and electron-irradiated lithium silicate ceramic breeder pebbles
2020
Abstract Ceramic breeder (CB) pebbles consisting of lithium orthosilicate (Li4SiO4) as the main phase and lithium metasilicate (Li2SiO3) as a secondary phase were analysed with respect to radiation-induced defects and radiolysis products. Therefore, pebbles that were irradiated with neutrons in the so-called HICU experiment ( H igh neutron fluence i rradiation of pebble sta c ks for f u sion) were compared to pebbles irradiated with accelerated electrons and to an unirradiated sample. Fourier transformation infrared spectroscopy was used to investigate changes in the phase composition. Beside an expected increase in the second phase in the neutron-irradiated samples, no further significant …
Lead–gold eutectic: An alternative liquid target material candidate for high power spallation neutron sources
2011
Abstract One of the main technical concerns of Megawatt-class spallation neutron sources is the removal of the heat deposited in the target station. A way to overcome it is to use targets consisting of flowing liquid metals, but the already tested materials – mercury and lead–bismuth eutectic (LBE) – are not unproblematic. We show here that another eutectic alloy containing lead and gold (LGE) could be a suitable alternative. Besides a chemical toxicity lower than mercury, this low melting-point alloy has the advantage of being solid at RT. Moreover, it combines a neutron production similar to mercury and LBE with smaller amounts of alpha-emitting nuclides, relieving safety and environmenta…
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes
2020
The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
2020
Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes.
TRITIUM RELEASE CHARACTERISTICS OF NEUTRON-IRRADIATED REFERENCE BERYLLIUM PEBBLES FOR THE HELIUM COOLED PEBBLE BED (HCPB) BLANKET
2011
In this paper, we present results on tritium release from the beryllium pebbles irradiated for 294 full power days from 17 April 2003 to November 2004 to the neutron fluence of 1.5-2 × 1025 m-2 (E>...
Germanium Doped CHxMicroshells for LMJ Targets
2011
AbstractAt the CEA Laser “Megajoule” facility, amorphous hydrogenated carbon (a-C:H or CHx) is the nominal ablator used to achieve inertial confinement fusion experiments. These targets are filled with a fusible mixture of deuterium-tritium in order to perform ignition.Since the achievement of ignition greatly depends on the physical properties of the shell, there must be precise control of thicknesses, doping concentration, and roughness. Experimental devices associated with suitable characterizations are described in this paper. The tolerances and yields for each specification are also presented. Some specifications are largely reached; high-frequency surface roughness due to isolated sur…
Kinetics of the electronic center annealing in Al2O3 crystals
2018
Authors are greatly indebted to A. Ch. Lushchik, V. Kortov, M. Izerrouken and R.Vila for stimulating discussions. This work has been carried out within the framework of the Eurofusion Consortium and has received funding from the Euroatom research and training programme 2014–2018 under grant agreement No 633053 . The views and opinions expressed herein do not necessarily reflect those of the European Commission. The calculations were performed using facilities of the Stuttgart Supercomputer Center (project DEFTD 12939 ).
Heavy Ion Induced Degradation in SiC Schottky Diodes : Bias and Energy Deposition Dependence
2017
Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence. peerReviewed