Search results for "nuclear energy"
showing 10 items of 614 documents
Influence of <formula formulatype="inline"><tex Notation="TeX">${\hbox{O}}_2$</tex></formula>-Loading Pretreatment on the Rad…
2014
We investigated the impact of an oxygen preloading on pure-silica-core or fluorine-doped-core fiber responses to high irradiation doses (up to 1 MGy (SiO 2 )). Oxygen enrichment was achieved through a diffusion-based technique, and the long-term presence of O 2 molecules was confirmed by micro-Raman experiments. Online radiation induced attenuation (RIA) experiments were carried out in both the pristine and the O 2 -loaded optical fibers to investigate the differences induced by this pretreatment in the UV and visible ranges. Contrary to results recently published on the positive impact of O 2 on infrared RIA, our results reveal a RIA increase with O 2 presence. Data are analyzed in order t…
Optical frequency domain reflectometer distributed sensing using microstructured pure silica optical fibers under radiations
2016
International audience; We investigated the capability of micro-structured optical fibers to develop multi-functional, remotely-controlled, Optical Frequency Domain Reflectometry (OFDR) distributed fiber based sensors to monitor temperature in nuclear power plants or high energy physics facilities. As pure-silica-core fibers are amongst the most radiation resistant waveguides, we characterized the response of two fibers with the same microstructure, one possessing a core elaborated with F300 Heraeus rod representing the state-of-the art for such fiber technology and one innovative sample based on pure sol-gel silica. Our measurements reveal that the Xray radiations do not affect the capaci…
Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
1998
In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of /spl sim/4/spl times/10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed 'Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.
Enhancement of the laser-driven proton source at PHELIX
2020
High power laser science and engineering 8, e24 (2020). doi:10.1017/hpl.2020.23
Radiation Characterization of Optical Frequency Domain Reflectometry Fiber-Based Distributed Sensors
2016
International audience; We studied the responses of fiber-basedtemperature and strain sensors related to Optical FrequencyDomain Reflectometry (OFDR) and exposed to high γ-ray dosesup to 10 MGy. Three different commercial fiber classes areused to investigate the evolution of OFDR parameters withdose, thermal treatment and fiber core/cladding composition.We find that the fiber coating is affected by both thermal andradiation treatments and this modification results in anevolution of the internal stress distribution inside the fiber that influences its temperature and strain Rayleigh coefficients. These two environmental parameters introduce a relative error up to 5% on temperature and strain…
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
2020
International audience; The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Formation and accumulation of radiation-induced defects and radiolysis products in modified lithium orthosilicate pebbles with additions of titanium …
2016
Abstract Lithium orthosilicate (Li4SiO4) pebbles with 2.5 wt.% excess of silicon dioxide (SiO2) are the European Union's designated reference tritium breeding ceramics for the Helium Cooled Pebble Bed (HCPB) Test Blanket Module (TBM). However, the latest irradiation experiments showed that the reference Li4SiO4 pebbles may crack and form fragments under operation conditions as expected in the HCPB TBM. Therefore, it has been suggested to change the chemical composition of the reference Li4SiO4 pebbles and to add titanium dioxide (TiO2), to obtain lithium metatitanate (Li2TiO3) as a second phase. The aim of this research was to investigate the formation and accumulation of radiation-induced …
Rare Earth Activated Oxyfluoride Glasses and Glass-Ceramics for Scintillation Applications
2012
Oxyfluoride glasses 49SiO2·6Al2O3·24Li2O·20LaF3 activated with Tb, Ce, Eu have been synthesized and studied. After heating at 580°C and 750°C crystalline phases were obtained. The samples were studied by DTA (Differential thermal analyzer), CL (cathodoluminescence), XRD (X-ray diffraction), SEM (scanning electron microscope), EDS (energy dispersive x-ray spectroscopy) methods. We found out that presence of crystalline phase enhances the CL of Tb activated samples significantly; whereas, the shortest decay time of 0.29 μs has been observed for less intense Ce doped glass sample.
ODS ferritic steels obtained from gas atomized powders through the STARS processing route: Reactive synthesis as an alternative to mechanical alloying
2018
Authors acknowledge ALBA synchrotron (Spain) for the provision of beamtime on the beam line BL22-CLAESS (Proposal 2016081797). Transmission electron microscopy observations were accomplished at Centro Nacional de Microscopía Electrónica, CNME-UCM. This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014–2018 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. Financial support from Basque Government through the ELKARTEK ACTIMAT 2016 project is also acknowledged.
Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence
2017
International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.