Search results for "optical"
showing 10 items of 7671 documents
Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations
2016
Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…
SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
2019
Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…
Partial discharge detection and localization along medium voltage cables
2017
In the last years different partial discharge (PD) measuring techniques have been developed because PD diagnostic is the most widely tool to evaluate the insulation condition of a power cable. Recently non-conventional methods and sensors have been used in order to reach improved results in PD measurements. The purpose of this work is to perform measurements that allow to study the variation of pulses when they travel along a MV cable and to locate the pulse source through the time arrival difference of the pulses obtained from two sensors installed separately.
Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes
2019
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed layer. The ZnO layer (~1- $\mu \text{m}$ thickness) consists of a dense collection of partially coalesced ZnO nanorods, organized in wurtzite phase with marked vertical orientation, whose density depends on the concentration of the solution during the CBD process. Due to the limited conductivity of the p-GaN layer, the recombination in the n-region is strongly dependent on the spreading length of the holes, ${L}_{h}$ , coming from the p-contact…
Multi-pulse characterization of trapping/detrapping mechanisms in AlGaN/GaN high electromobility transistors
2019
GaN high-electro mobility transistors (HEMTs) are among the most promising candidates for use in high-power, high-frequency, and high-temperature electronics owing to their high electrical breakdown threshold and their high saturation electron velocity. The applications of these AlGaN/GaN HEMTs in power converters are limited by the surface trapping effects of drain-current collapse. Charge-trapping mechanisms affect the dynamic performance of all GaN HEMTs used in power switching applications. This study analyzes the dynamic resistance of GaN HEMTs and finds that the effects of dynamic resistance can be suppressed by controlling switching conditions and on-off cycles.
Spectroscopic study of ion temperature in minimum-B ECRIS plasma
2019
Experimentally determined ion temperatures of different charge states and elements in minimum-B confined electron cyclotron resonance ion source (ECRIS) plasma are reported. It is demonstrated with optical emission spectroscopy, complemented by the energy spread measurements of the extracted ion beams, that the ion temperature in the JYFL 14 GHz ECRIS is 5–28 eV depending on the plasma species and charge state. The reported ion temperatures are an order of magnitude higher than previously deduced from indirect diagnostics and used in simulations, but agree with those reported for a quadrupole mirror fusion experiment. The diagnostics setup and data interpretation are discussed in detail to …
Accumulation of radiation defects and modification of micromechanical properties under MgO crystal irradiation with swift 132Xe ions
2020
This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No. 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. A.A. also acknowledges support via the project GF AP05134257 of Ministry of Education and Science of the Republic of Kazakhstan .
Strain detection in non-magnetic steel by Kerr-microscopy of magnetic tracer layers
2018
Abstract For many applications of steel, e.g. for the evaluation of the fatigue state of components or structures, the characterization of the microscopic strain distribution in the material is important. We present a proof-of-principle for the visualization of such strain distributions by Kerr-microscopy of ferromagnetic tracer layers on nonmagnetic steel sheets. The influence of indentation induced strain on the magnetic domain pattern of 20 nm Galfenol and Permalloy tracer layers on austenitic AISI 904L steel sheets was investigated. The obtained Kerr-microscopy images show a characteristic domain pattern in the strained regions of the steel sheets, which is consistent with a dominant ma…
Influence of Sr addition on structural, dielectric and Raman properties of Na0.5Bi0.5TiO3ceramics
2016
ABSTRACTLead free (Na0.5Bi0.5)1-xSrxTiO3 (x = 0, 0.01 and 0.02) ceramics were produced by a conventional solid-state sintering method. X-ray diffraction analysis shows that the obtained samples possess the perovskite structure with rhombohedral symmetry. The microstructure study shows a dense structure, in agreement with the relative density (above 97%). Dielectric analysis revealed the diffuse character of the electric permittivity anomalies and their shift to a lower temperature range after Sr doping of NBT. The Raman spectra are similar for all samples in agreement with the X-ray diffraction data. The possible origin of the observed effects was discussed.
Processing, basic characterization and standard dielectric measurements on PLZT x/65/35 (2≤x≤13) ceramics
2016
ABSTRACTThe influence of external stress (0-800bar) on the dielectric properties of PLZT x/65/35 (2≤x≤13) ceramics was investigated. Applying uniaxial pressure leads to a change in the peak intensity of the electric permittivity (ϵ), of its frequency dispersion as well as in the dielectric hysteresis. The peak intensity of ϵ becomes broader and shifts to lower temperatures for PLZT x/65/35 with x = 2, 4, 6, 7, 9.75, 10, 11 and 13, with increasing pressure, on heating. It was concluded that applying uniaxial pressure induces an increase of Tm, and thus has similar effects as the increase of the Ti ion concentration in the PZT system. Results based on nanoregion switching processes under comb…