Search results for "phonon scattering"

Proton-Deuteron Elastic Scattering for E > 0

1999

We report on the first reliable numerical results for proton-deuteron elastic scattering observables for energies above the deuteron breakup thresh- old, for the Paris potential. The calculations have been performed within the screening and renormalisation approach. The theoretical results are compared with recent experimental data.

Excitonic effects in two-LO-phonon resonant Raman scattering.

1993

Abstract The role of electron-hole correlation in resonant Raman scattering by two LO-phonons is analyzed. A theoretical model including excitons belonging to the discrete and continuous spectra as virtual intermediate states in the Raman process and valid for incident energies below and above the gap is developed. For the exciton-phonon coupling the Frohlich Hamiltonian is considered. The most important contribution to the Raman scattering efficiency corresponds to the continuous→discrete→discrete exciton transition, followed by the discrete→discrete→discrete and the continuous→continuous→discrete ones. The model is tested for GaP, where the scattering efficiency data are available around …

Two-dimensional phononic thermal conductance in thin membranes in the Casimir limit

2011

We discuss computational analysis of phononic thermal conduction in the suspended membrane geometry, in the experimentally commonly appearing case where heat can flow out radially in two dimensions from a central source. As we are mostly interested in the low-temperature behavior where bulk scattering of phonons becomes irrelevant, we study the limit where all phonon scattering takes place at the membrane surfaces. Moreover, we limit the discussion here to the case where this surface scattering is fully diffusive, the so called Casimir limit. Our analysis shows that in the two-dimensional case, no analytic results are available, in contrast to the well known 1D Casimir limit. Numerical solu…

Temperature dependence of Raman scattering and luminescence of the disordered Zn0.5Cd0.5Se alloy

2002

Abstract We report on luminescence and Raman scattering measurements of zincblende Zn0.5Cd0.5Se thin film grown by molecular beam epitaxy. From the luminescence data of the exciton peak, the dependence of the energy gap with temperature [ d E g / d T=(4.35±0.01)×10 −4 meV / K ] and zero-temperature phonon renormalization energy ( Δ E(0)=30±1 meV ) have been obtained. The broadening of the excitonic emission as the temperature increases is mainly due to scattering processes with longitudinal optical phonons and residual ionized impurities. Raman scattering shows a multiphonon structure, which depends on the temperature. At low temperatures, up to the fifth-order phonon peaks appear due to re…

Resonant hyper-Raman scattering in semiconductors: Excitonic effects

1999

Abstract A theoretical model of resonant hyper-Raman scattering involving two incident photons of frequency ωL is developed. The model is valid for energies 2ℏωL around the absorption edge of the semiconductor, and takes into account Wannier excitons as intermediate states in the scattering process. Both deformation potential and Frohlich interaction are included in the model: It is found that Frohlich-mediated scattering is a dipole-allowed process, in contrast to one-phonon Raman scattering, where the Frohlich mechanism is dipole-forbidden. We have performed numerical calculations of the resonance profile (hyper-Raman cross-section versus 2ℏωL) and applied our model to materials with dipo…

Elastic light scattering from semiconductor structures: Localized versus propagating intermediate electronic excitations

1995

We present a theoretical study of the relative role of localized and propagating intermediate electronic states in the processes of elastic scattering of light. Only localized excitations lead to isotropic scattering in lowest-order perturbation theory. Inhomogeneous broadening of the optical transition affects the scattering efficiency from the ordered and disordered array of localized states in a qualitatively different way. The propagating electronic excitations may only contribute to elastic light scattering via higher-order processes. The scattering of excitons by impurities or the interface roughness potential is suggested as a mechanism for the contribution of propagating excitations…

Resonant hyper-Raman scattering in semiconductors

1998

A theoretical model for resonant hyper-Raman scattering by LO phonons is developed, taking into account excitonic effects. The model is valid for energies below and above an allowed absorption edge. The matrix elements corresponding to the exciton-photon and exciton-phonon interactions are derived analytically, and their contributions to the total scattering efficiency are analyzed. The two main electron-phonon interaction mechanisms present in polar semiconductors, deformation potential, and Fr\"ohlich interaction, are considered. It is shown that the one-phonon resonance hyper-Raman scattering mediated by the deformation potential interaction is dipole forbidden, whereas it is allowed whe…

Role of excitons in double Raman resonances in GaAs quantum wells

1996

Raman scattering by longitudinal-optical phonons has been measured in GaAs-AlAs multiple quantum wells at high magnetic fields. Doubly resonant scattering processes are observed at photon energies corresponding to magneto-excitons with different principal quantum numbers for the incoming and outgoing channels. The existence of these initially forbidden scattering processes, their resonance energies, and their relative intensities are correctly reproduced by our theoretical description. The model takes into account the excitonic nature of the intermediate states, as well as scattering processes involving a nonzero in-plane phonon wave vector, which is required to allow inter-Landau level sca…

Low Energy Behaviour of the Phase Shifts for Velocity-Dependent Potentials

1973

Electric-field-induced Raman scattering in GaAs: Franz-Keldysh oscillations

1995

We have studied the influence of strong electric fields on the Raman scattering intensity from LO phonons in GaAs (100) at room temperature using laser excitation energies above the fundamental ${\mathit{E}}_{0}$ gap. Striking oscillations are found in the scattering intensity for configurations where either the deformation potential or Fr\"ohlich electron-phonon interaction contribute. The oscillations in the deformation-potential-mediated scattering intensity can be related to Franz-Keldysh oscillations derived from the ${\mathit{E}}_{0}$ gap, whereas a more complicated mechanism has to be invoked for processes where Fr\"ohlich interaction is responsible.