Search results for "photovoltaic"
showing 10 items of 646 documents
Experimental study of the combined RES-based generators and electric storage systems for public buildings
2019
Abstract In the present paper, a new approach to the management of energy resources in the Research and Technology Centre of Energy (CRTEn -Tunisia) is proposed and evaluated by the monitoring of a PV installation realized for the cooperation project DE.DU.ENER.T, using renewable energy and economic criteria. The aim of this project is to improve energy efficiency order to minimize the electricity cost consumed at the CRTEn laboratory. According to the bills of electricity received, we noticed that there is a high consumption of electrical current. So, we targeted to install a photovoltaic field of 12KWc to reduce these bills by using the sustainable, green and clean sources. A theoretical …
Assessment of the Usability and Accuracy of Two-Diode Models for Photovoltaic Modules
2017
Many diode-based equivalent circuits for simulating the electrical behaviour of photovoltaic (PV) cells and panels are reported in the scientific literature. Two-diode equivalent circuits, which require more complex procedures to calculate the seven model parameters, are less numerous. The model parameters are generally calculated using the data extracted from the datasheets issued by the PV panel manufactures and adopting simplifying hypotheses and numerical solving techniques. A criterion for rating both the usability and accuracy of two-diode models is proposed in this paper with the aim of supporting researchers and designers, working in the area of PV systems, to select and use a model…
A Criterion for Rating the Usability and Accuracy of the One-Diode Models for Photovoltaic Modules
2016
In selecting a mathematical model for simulating physical behaviours, it is important to reach an acceptable compromise between analytical complexity and achievable precision. With the aim of helping researchers and designers working in the area of photovoltaic systems to make a choice among the numerous diode-based models, a criterion for rating both the usability and accuracy of one-diode models is proposed in this paper. A three-level rating scale, which considers the ease of finding the data used by the analytical procedure, the simplicity of the mathematical tools needed to perform calculations and the accuracy achieved in calculating the current and power, is used. The proposed criter…
Assessment of the Usability and Accuracy of the Simplified One-Diode Models for Photovoltaic Modules
2016
Models for photovoltaic (PV) cells and panels, based on the diode equivalent circuit, have been widely used because they are effective tools for system design. Many authors have presented simplified one-diode models whose three or four parameters are calculated using the data extracted from the datasheets issued by PV panel manufactures and adopting some simplifying hypotheses and numerical solving techniques. Sometimes it may be difficult to make a choice among so many models. To help researchers and designers working in the area of photovoltaic systems in selecting the model that is fit for purpose, a criterion for rating both the usability and accuracy of simplified one-diode models is p…
Integrazione di celle solari di terza generazione nel vetromattone per la realizzazione di pannelli traslucidi fotovoltaici. Analisi prestazione e st…
2013
L’articolo illustra i primi risultati ottenuti nell’ambito dell’analisi prestazionale del vetromattone fotovoltaico, un prodotto edilizio innovativo derivato dall’integrazione di celle fotovoltaiche di terza generazione (DSSC) nel vetromattone, ideato per la realizzazione di involucri traslucidi energeticamente effi cienti ed “attivi”, in grado di ridurre i consumi energetici degli edifi ci e di produrre, al contempo, energia verde. L’analisi è stata condotta su quattro differenti ipotesi di integrazione. Attraverso simulazioni numeriche si è effettuata una valutazione dell’energia assorbita dagli strati attivi oltre che delle prestazioni ottiche complessive del dispositivo. Lo studio anali…
Enhanced light scattering in Si nanostructures produced by pulsed laser irradiation
2013
An innovative method for Si nanostructures (NS) fabrication is proposed, through nanosecond laser irradiation (lambda = 532 nm) of thin Si film (120 nm) on quartz. Varying the laser energy fluences (425-1130 mJ/cm(2)) distinct morphologies of Si NS appear, going from interconnected structures to isolated clusters. Film breaking occurs through a laser-induced dewetting process. Raman scattering is enhanced in all the obtained Si NS, with the largest enhancement in interconnected Si structures, pointing out an increased trapping of light due to multiple scattering. The reported method is fast, scalable and cheap, and can be applied for light management in photovoltaics. (C) 2013 AIP Publishin…
Vapor phase epitaxy of Hg1−xCdxI2 on sapphire
1998
Abstract We demonstrate the possibility of growing Hg 1− x Cd x I 2 layers on sapphire substrates by vapor-phase epitaxy (VPE). The successful growth has been carried out using an α-HgI 2 polycrystalline source and a CdTe buffer layer grown on sapphire by metalorganic vapor phase epitaxy (MOVPE) before the Hg 1− x Cd x I 2 VPE growth. The Hg 1− x Cd x I 2 /sapphire 20–40 μm thick layers with a uniform composition in the range of x =0.2–0.6 were grown at 220–250°C for 70–300 h. The layers were studied by scanning electron microscopy, energy disperse X-ray analysis and X-ray diffractometry. Results on the layer characterization are reported and the effect of VPE conditions on the layer proper…
Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates
2003
Abstract The morphology and structure of CdTe(1 1 1) layers grown on GaAs(1 0 0) by MOCVD have been studied by atomic force microscopy (AFM) and X-ray texture analysis. Growth conditions have been chosen so that mirror-like CdTe layers are obtained. Layers whose growth times vary between 10 s and 2 h have been investigated. The X-ray texture analysis shows that the CdTe layers grown on GaAs substrates that were thermally treated at 580°C for 30 min in a H 2 atmosphere exhibit a (1 1 1) preferential orientation and are twinned. This twinned structure of the (1 1 1)CdTe layer which is observed as 60° rotated triangular crystallites in the AFM images strongly influences the surface morphology.…
Structural characterization of CdTe layers grown on (0001) sapphire by MOCVD
2004
Abstract We report on the growth of CdTe layers directly onto (0 0 0 1) sapphire substrates by MOCVD. The structure and morphology of the layers have been investigated as a function of growth temperature and II/VI precursor molar ratio by X-ray diffraction and scanning electron microscopy. The texture of the samples has revealed the existence of a temperature threshold, with higher growth temperatures resulting on completely (1 1 1) oriented layers. Some of these layers contained microtwins, as indicated by the extra peaks in the {4 2 2} Φ scans, leading to the existence of two different domains. The structural quality of each domain, as well as of the sample as a whole, has been determined…
Selective area vapor-phase epitaxy and structural properties of Hg1 − xCdxTe on sapphire
1997
Selective area (SA) Hg1 − xCdxTesapphire layers have been grown using the recently developed technique of the vapor-phase epitaxy (VPE) of Hg1 − xCdxTe layers on CdTesapphire heteroepitaxial substrates (HS), which we have called “VPE on HS technique” (Sochinskii et al., J. Crystal Growth 149 (1995) 35; 161 (1996) 195). First, planar CdTe (1 1 1) 5–7 μm thick layers were grown on sapphire (0 0 0 1) wafers by metalorganic vapor-phase epitaxy (MOVPE) at 340°C for 1–2.5 h using dimethylcadmium and di-isopropyltellurium as precursors. Second, CdTe/sapphire mesas were formed using standard photolithography in the form of alternating parallel linear arrays consisting of 500 × 70 μm2 elements. Thir…