Search results for "pit"

showing 10 items of 9314 documents

Induced crystallographic changes in Cd1−xZnxO films grown on r-sapphire by AP-MOCVD: the effects of the Zn content when x ≤ 0.5

2020

High-resolution X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques were used to investigate, as a function of the nominal Zn content in the range of 0–50%, the out-of-plane and in-plane crystallographic characteristics of Cd1−xZnxO films grown on r-plane sapphire substrates via atmospheric pressure metal–organic chemical vapor deposition. The study is conducted to search for knowledge relating to the structural details during the transition process from a rock-salt to a wurtzite structure as the Zn content increases in this CdO–ZnO system. It has been found that it is possible to obtain films exhibiting a single (001) cubic orientation with good …

010302 applied physicsMaterials scienceScanning electron microscope02 engineering and technologyGeneral ChemistryChemical vapor deposition021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciencesCrystallographyTransmission electron microscopy0103 physical sciencesSapphireGeneral Materials ScienceOrthorhombic crystal systemCrystalliteMetalorganic vapour phase epitaxy0210 nano-technologyWurtzite crystal structureCrystEngComm
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Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature

2011

Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a…

010302 applied physicsMaterials scienceScanning electron microscopeNucleationNanowireAnalytical chemistry02 engineering and technologyPlasma021001 nanoscience & nanotechnologyCondensed Matter PhysicsCritical value01 natural sciencesSize increaseInorganic ChemistryCondensed Matter::Materials ScienceCrystallography0103 physical sciencesMaterials Chemistry[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]0210 nano-technologyDispersion (chemistry)ComputingMilieux_MISCELLANEOUSMolecular beam epitaxy
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Lattice sites of diffused gold and platinum in epitaxial ZnSe layers

2000

Abstract The lattice location of diffused gold and platinum in zinc selenide (ZnSe) epitaxial layers was studied using the Rutherford backscattering (RBS) channeling technique. Thin Au and Pt films were evaporated onto ZnSe samples. The Au/ZnSe samples were annealed at 525°C and the residual Au film was removed by etching. Channeling angular scan measurements showed that about 30% of Au atoms were close to substitutional site (displaced about 0.2 A). In the case of the Pt/ZnSe samples the annealing temperatures ranged from 600°C to 800°C. The Pt minimum yields along 〈1 0 0〉 direction were close to the random value, varying from 80% to 90%. The measured Pt angular scans along 〈1 0 0〉 and 〈1 …

010302 applied physicsNuclear and High Energy PhysicsMaterials scienceScatteringAnnealing (metallurgy)chemistry.chemical_element02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyEpitaxy01 natural sciencessymbols.namesakechemistry.chemical_compoundCrystallographyTransition metalchemistry0103 physical sciencessymbolsZinc selenideRutherford scattering0210 nano-technologyPlatinumInstrumentationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental an…

2020

We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow…

010302 applied physicsPhotoluminescenceMaterials sciencePhysics and Astronomy (miscellaneous)Band gapExciton02 engineering and technologySubstrate (electronics)Nitride021001 nanoscience & nanotechnologyEpitaxy01 natural sciencesMolecular physicsCondensed Matter::Materials Science0103 physical sciencesSapphirePhotoluminescence excitation0210 nano-technologyApplied Physics Letters
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Transport properties of Bi2Sr2Ca2Cu3O10+δ Bicrystal Grain Boundary Josephson Junctions and SQUIDs

1996

Josephson junctions and SQUIDs on 36.8° SrTiO 3 bicrystal substrates were prepared from epitaxial Bi 2 Sr 2 Ca 2 Cu 3 O 10+δ thin films with critical temperatures around 95K. The current-voltage characteristics are well described by the resistively and capacitively shunted junction model. I c R n products of 50μV at 77K and 0.7mV at 4.2K have been reached. The I c (B) dependence is symmetric to B = 0 with an I c suppression of 90% in the first minimum. Nevertheless it turns out, that the junctions are inhomogeneous on a μm scale. SQUID modulations observed at 78K indicate a flux-voltage transfer function of 2.7μV/Φ 0 at this temperature.

010302 applied physicsPhysicsJosephson effectCondensed matter physicsGeneral Physics and AstronomyEpitaxy01 natural scienceslaw.inventionSQUIDlaw[PHYS.HIST]Physics [physics]/Physics archives0103 physical sciencesGrain boundaryThin film010306 general physics
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ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

2016

Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis…

010302 applied physicsTelecomunicacionesMaterials sciencebusiness.industrySchottky diodePhotodetector02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesPhotodiodelaw.inventionResponsivityWavelengthSemiconductorlaw0103 physical sciencesOptoelectronicsGrain boundary0210 nano-technologybusinessMolecular beam epitaxy
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Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe

2011

Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…

010302 applied physicsX-ray nanoprobePhotoluminescenceChemistryAnalytical chemistryNanowireNanoprobe02 engineering and technology021001 nanoscience & nanotechnologyCondensed Matter PhysicsEpitaxy01 natural sciencessymbols.namesake0103 physical sciencessymbolsGeneral Materials Science0210 nano-technologyRaman spectroscopyRaman scatteringMolecular beam epitaxyphysica status solidi (RRL) - Rapid Research Letters
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[Bis(phosphonio)isophosphindolide]silver complexes

1996

The outcome of reactions of bis(phosphonio)isophosphindolide salts 1[X] and 6[X] (X- Cl-, Br-, CF3SO3-) with silver salts AgY (Y- = CF3SO3-, CF3CO2-, CH3CO2-, 1/2 SO4-) depends strongly on the available anions X, Y. If X-, Y- CF3SO3-, both mononuclear and dinuclear silver complexes are formed which exhibit either μ1,μ1(P) or μ2,η1(P) coordination of the cations 1, 6 to one or to both metals. In solution, dynamic equilibria between both types of products and free 1, 6 were detected by 31P-NMR spectroscopy. Mononuclear (4a, 7) and dinuclear (5a, 8) complexes were isolated as solvates with CHCl3 or THF. If X-, Y- = CF3CO2, only equilibrium mixtures between the free ligands and silver complexes…

010405 organic chemistryPrecipitation (chemistry)ChemistryStereochemistryBridging ligand010402 general chemistryMetathesis01 natural sciences0104 chemical sciencesIonInorganic ChemistrySilver saltsCrystallographyMoleculeSpectroscopySingle crystal
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Formation and trapping of the thermodynamically unfavoured inverted-hemicucurbit[6]uril

2019

Amplification of a thermodynamically unfavoured macrocyclic product through the directed shift of the equilibrium between dynamic covalent chemistry library members is difficult to achieve. We show for the first time that during condensation of formaldehyde and cis-N,N'-cyclohexa-1,2-diylurea formation of inverted-cis-cyclohexanohemicucurbit[6]uril (i-cis-cycHC[6]) can be induced at the expense of thermodynamically favoured cis-cyclohexanohemicucurbit[6]uril (cis-cycHC[6]). The formation of i-cis-cycHC[6] is enhanced in low concentration of the templating chloride anion and suppressed in excess of this template. We found that reaction selectivity is governed by the solution-based template-a…

010405 organic chemistryPrecipitation (chemistry)Metals and AlloysDiastereomerGeneral ChemistryTrapping010402 general chemistry01 natural sciencesCatalysis0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistry.chemical_compoundchemistryComputational chemistryYield (chemistry)Materials ChemistryCeramics and CompositesTrifluoroacetic acidDynamic combinatorial chemistrySelectivityBinding affinitiesChemical Communications
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Optimal Dynamic Portfolio Risk Management

2016

Numerous econometric studies report that financial asset volatilities and correlations are time-varying and predictable. Over the past decade, this knowledge has stimulated increasing interest in various dynamic portfolio risk control techniques. The two basic types of risk control techniques are: risk control across assets and risk control over time. At present, the two types of risk control techniques are not implemented simultaneously. There has been surprisingly little theoretical study of optimal dynamic portfolio risk management. In this paper, the author fills this gap in the literature by formulating and solving the multi-period portfolio choice problem. In terms of dynamic portfoli…

010407 polymersEconomics and EconometricsApplication portfolio managementComputer scienceFinancial assetControl (management)Diversification (finance)01 natural sciencesSpectral risk measureAccounting0502 economics and businessEconomicsEconometricsCapital asset pricing modelChoice problemModern portfolio theoryRisk managementActuarial science050208 financebusiness.industry05 social sciencesGeneral Business Management and AccountingPortfolio risk0104 chemical sciencesReplicating portfolioRisk ControlPortfolioPortfolio optimizationbusinessFinanceThe Journal of Portfolio Management
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