Search results for "purity"
showing 10 items of 356 documents
Determination of 129I/127I isotope ratios in liquid solutions and environmental soil samples by ICP-MS with hexapole collision cell
2003
The determination of I-129 in environmental samples at ultratrace levels is very difficult by ICP-MS due to a high noise caused by Xe impurities in argon plasma gas (interference of Xe-129(+)), possible (IH2+)-I-127 interference and an insufficient abundance ratio sensitivity of the ICP mass spectrometer for I-129/I-127 isotope ratio measurement. A sensitive, powerful and fast analytical technique for iodine isotope ratio measurements in aqueous solutions and contaminated soil samples directly without sample preparation using ICP-MS with a hexapole collision cell (ICP-CC-QMS) was developed. Oxygen is used as reaction and carrier gas for iodine thermal desorption via the gas phase from solid…
Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures.
1987
This paper reports investigations of ZnS quasi-amorphous films by electroreflectance (ER). The films were produced by thermal evaporation and their structure determined by electron diffraction. A voltage Vo cos cut was applied through the film with two evaporated Al electrodes. A lock-in amplifier gave 2 signals, Sf at f=ω/2π frequency and S2f at 2f frequency. The S2f spectrum, characteristic of the centrosymmetric bulk component of the film, reveals tails of localized states typical of amorphous semi-conductors. The Sf spectrum, characteristic of the interface layers with broken centro-symmetry, reveals tails of impurity levels which we attributed to diffusion of the electrode metal into t…
Optimization of impurity profile for p-n junction in heterostructures
2005
We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.
<title>Thermostimulated electronic and ionic processes in irradiated sapphire</title>
2003
Electronic and ionic thermostimulated (TS) relaxation (TSR) processes in nominally pure sapphire (α-Al2O3 grown with oxygen deficiency) have been investigated at 290 - 650 K by means of the TS current (TSC), ionic depolarization current (TSDC) and electron emission (TSEE) techniques. After thermal (ionic) polarization of the reduced sapphire wide (approximately 75 K) and asymmetric ionic dipolar TSDC peak at 590 K (disorientation of the anion vacancy-related dipoles) was detected. Above 450 - 500 K the anion vacancy hopping (migration) starts and their interaction with defects take place. This can lead to lattice dynamic disordering and anion vacancy diffusion-controlled processes in sapphi…
Influence of a nano phase segregation on the thermoelectric properties of the p-type doped stannite compound Cu(2+x)Zn(1-x)GeSe4.
2012
Engineering nanostructure in bulk thermoelectric materials has recently been established as an effective approach to scatter phonons, reducing the phonon mean free path, without simultaneously decreasing the electron mean free path for an improvement of the performance of thermoelectric materials. Herein the synthesis, phase stability, and thermoelectric properties of the solid solutions Cu_(2+x)Zn_(1–x)GeSe_4 (x = 0–0.1) are reported. The substitution of Zn^(2+) with Cu^+ introduces holes as charge carriers in the system and results in an enhancement of the thermoelectric efficiency. Nano-sized impurities formed via phase segregation at higher dopant contents have been identified and are l…
The behavior of the 180° domain walls in disordered dielectrics like KTaO3 : Li and KTaO3 : Nb
2003
We calculate the structure of 180° domain wall in disordered ferroelectrics with random site electric dipoles (i.e. those like K 1-x Li x TaO 3 , KTa 1-x Nb x O 3 , where Li + or Nb 5+ are off-center ions forming impurity dipoles). The calculation is performed on the base of the free energy functional of disordered dielectrics derived earlier [M. D. Glinchuk et al., Phase Transit., 2003 (to be published)] within the framework of a random field method. We obtain the domain wall thickness as a function of impurity dipole concentration n and temperature T. It is shown that in disordered ferroelectrics the domain wall is usually broader than in their ordered counterparts. The thickness increase…
Site symmetry approach in the supercell model of carbon-doped ZnO bulk
2017
Abstract Carbon-doped zinc oxide is one of promising materials for technological applications due to its ferromagnetism observed at room temperature. When using the hybrid DFT-HF Hamiltonian based on the PBE0 exchange-correlation functional for large-scale calculations on defective ZnO:C single crystal, we have shown that application of supercell model for carbon impurity located at O site of wurtzite-structured ZnO bulk results in the dependence of calculated formation energy of the point defect (Eform) on the selected site symmetry of the substituted atom in the supercell. For a more symmetric C3v site usually used for simulation of defective ZnO structures, values of formation energy per…
Tin-related double acceptors in gallium selenide single crystals
1998
Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…
High‐temperature behavior of impurities and dimensionality of the charge transport in unintentionally and tin‐doped indium selenide
1993
A systematic study of the electron transport and shallow impurity distribution in indium selenide above room temperature or after an annealing process is reported by means of far‐infrared‐absorption and Hall‐effect measurements. Evidences are found for the existence of a large concentration of deep levels (1012–1013 cm−2), related to impurities adsorbed to stacking faults in this material. Above room temperature impurities can migrate from those defect zones and then become shallow in the bulk. The subsequent large increase of 3D electrons can change the dimensionality of the electron transport, which in most cases was 2D. The temperature dependence of the resistivity parallel to the c axis…
Photosensitivity of SiO2–Al and SiO2–Na glasses under ArF (193 nm) laser
2009
Abstract Photosensitivity of SiO 2 –Al and SiO 2 –Na glass samples was probed by means of the induced optical absorption and luminescence as well as by electron spin-resonance (ESR) after irradiation with excimer-laser photons (ArF, 193 nm). Permanent visible darkening in the case of SiO 2 –Al and transient, life time about one hour, visible darkening in the case of SiO 2 –Na was found under irradiation at 290 K. No darkening was observed at 80 K for either kind of material. This investigation is dedicated to revealing the electronic processes responsible for photosensitivity at 290 and 80 K. The photosensitivity of both materials is related to impurity defects excited directly in the case …