Search results for "quantum well"
showing 10 items of 76 documents
Exciton mass increase in a GaAs/AlGaAs quantum well in a transverse magnetic field
2017
In this work we have investigated the exciton reflectance spectra of a high quality heterostructure with a GaAs/AlGaAs quantum well in a transverse magnetic field (Voigt geometry). It has been shown that application of the magnetic field leads to a decrease of energy distance between spectral features related to the excitonlike polariton modes. This effect has been treated as the magneto-induced increase of the exciton mass. We have shown that the hydrogenlike and diamagnetic exciton models are insufficient to describe the exciton behavior in the intermediate magnetic fields studied. Considering the symmetry of the problem, we have developed a phenomenological model which adequately describ…
Resonant Rayleigh scattering by confined two-dimensional excitonic states
1997
A systematic study of resonant Rayleigh scattering in semiconductor single quantum wells has been carried out. The dependence of the scattering efficiency on the well width and the temperature has been investigated. The behaviour observed in the resonant Rayleigh spectra can be explained in terms of the confinement of the excitonic states in the plane of the well due to fluctuations in the well width. A microscopic theoretical model for the elastic scattering of light by weakly confined two-dimensional excitonic states has been developed. The Rayleigh scattering efficiency has been calculated to the lowest-order of perturbation theory and the results found to be in good agreement with the e…
Two-phonon magneto-Raman scattering in quantum wells: Fröhlich interaction
1996
We have developed a theoretical model of two-phonon resonant magneto-Raman scattering in a semiconductor quantum well (QW). Frohlich electron-phonon interaction has been considered and the corresponding selection rules are derived for Faraday geometry and backscattering configuration. The resonant profiles are analyzed as a function of magnetic field and laser energy. To simplify the discussion a three-band model with parabolic masses has been used as a first approach, studying later the role of heavy-hole light-hole admixture in the scattering process. It is shown that, due to mixing effects, Frohlich interaction contributes to the two-phonon Raman spectra in the parallel (z(σ ± , σ ± ) z)…
Entanglement dynamics of two independent cavity-embedded quantum dots
2010
We investigate the dynamical behavior of entanglement in a system made by two solid-state emitters, as two quantum dots, embedded in two separated micro-cavities. In these solid-state systems, in addition to the coupling with the cavity mode, the emitter is coupled to a continuum of leaky modes providing additional losses and it is also subject to a phonon-induced pure dephasing mechanism. We model this physical configuration as a multipartite system composed by two independent parts each containing a qubit embedded in a single-mode cavity, exposed to cavity losses, spontaneous emission and pure dephasing. We study the time evolution of entanglement of this multipartite open system finally …
Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity
1997
Abstract We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry–Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μ J cm −2 , and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation.
Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by Hard X-ray synchrotron nanoprobes
2019
Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity without destroying the material. Three complementary hard X-ray synchrotron techniques at the nanoscale have been applied to the study of individual nanowires (NWs) containing non-polar GaN/InGaN multi-quantum-wells. The trace elemental sensitivity of X-ray fluorescence allows one to determine the In concentration of the quantum wells and their inhomogeneities along the NW. It is also possible to rule out any contamination from the gold nanoparticle …
Acoustic manipulation of electron-hole pairs in GaAs at room temperature
2004
We demonstrate the optically detected long-range (>100 μm) ambipolar transport of photogenerated electrons and holes at room temperature by surface acoustic waves (SAWs) in (In,Ga)As-based quantum well structures coupled to an optical microcavity. We also show the control of the propagation direction of the carriers by a switch composed of orthogonal SAW beams, which can be used as a basic control gate for information processing based on ambipolar transport.
Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions
2006
We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x-ray diffraction. Atomic force microscopy shows different surface morphologies between samples grown with and without In. This is ascribed to a modified relaxation mechanism induced by different surface kinetics. These improved MQWs exhibit intersubband absorption at short wavelength (2 mu m). The absorption linewidth is as low as 65 meV and the absorption coefficient is increased by 85%.
Mid-infrared intersubband absorption in lattice-matched AlInN/GaN multiple-quantum wells
2005
We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInNGaN multiple-quantum-wells. A clear absorption peak is observed around 3 μm involving transitions from the conduction band ground state to the first excited state. In addition to ISB absorption, photoluminescence experiments were carried out on lattice- matched AlInNGaN single quantum wells in order to determine the spontaneous polarization discontinuity between GaN and Al0.82 In0.18 N compounds. The experimental value is in good agreement with theoretical predictions. Our results demonstrate that the AlInNGaN system is very promising to achieve crack-free and low dislocation density struct…
Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells
1998
9 páginas, 11 figuras.