Search results for "rate"
showing 10 items of 22191 documents
Electrical Modeling of Monolithically Integrated GMR Based Current Sensors
2018
We report on the electrical compact model, using Verilog-A, of a monolithically integrated giant magnetoresistance (GMR) based electrical current sensors. For this purpose, a specifically designed ASIC (AMS $0.35\mu \mathrm{m}$ technology) has been considered, onto which such sensors have been patterned and fabricated, following a two-steps procedure. This work is focused on the DC regime model extraction, giving evidences of its good performance and stating the bases for subsequent model improvements.
Stopping cross-section measurements of 4He in TiN1.1O0.27
2000
Abstract The stopping cross-section for 4He projectiles in TiNx compounds has been measured using the backscattering method. A multi-compound marker layer deposited between the test film and the substrate was used to obtain the stopping cross-section at several energies with one energy of the incident beam. Two RBS spectra at definite tilt angles of the sample are taken for each beam energy. The assistance of computer codes to synthesize RBS spectra is very useful to obtain the pertinent information from the displacements of the peaks of the marker layers. Stopping cross-section values are obtained with an estimated uncertainty of about 6%.
Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental an…
2020
We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow…
Hydrogen plasma induced photoelectron emission from low work function cesium covered metal surfaces
2017
Experimental results of hydrogen plasma induced photoelectron emission from cesium covered metal surfaces under ion source relevant conditions are reported. The transient photoelectron current during the Cs deposition process is measured from Mo, Al, Cu, Ta, Y, Ni, and stainless steel (SAE 304) surfaces. The photoelectron emission is 2–3.5 times higher at optimal Cs layer thickness in comparison to the clean substrate material. Emission from the thick layer of Cs is found to be 60%–80% lower than the emission from clean substrates. peerReviewed
Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy
2019
The low-frequency noise in a nanometer-sized virtual memristor consisting of a contact of a conductive atomic force microscope (CAFM) probe to an yttria stabilized zirconia (YSZ) thin film deposited on a conductive substrate is investigated. YSZ is a promising material for the memristor application since it is featured by high oxygen ion mobility, and the oxygen vacancy concentration in YSZ can be controlled by varying the molar fraction of the stabilizing yttrium oxide. Due to the low diameter of the CAFM probe contact to the YSZ film (similar to 10nm), we are able to measure the electric current flowing through an individual filament both in the low resistive state (LRS) and in the high r…
A Novel Fault-Tolerant Routing Algorithm for Mesh-of-Tree Based Network-on-Chips
2019
Use of bus architecture based communication with increasing processing elements in System-on-Chip (SoC) leads to severe degradation of performance and speed of the system. This bottleneck is overcome with the introduction of Network-on-Chips (NoCs). NoCs assist in communication between cores on a single chip using router based packet switching technique. Due to miniaturization, NoCs like every Integrated circuit is prone to different kinds of faults which can be transient, intermittent or permanent. A fault in any one component of such a crucial network can degrade performance leaving other components non-usable. This paper presents a novel Fault-Tolerant routing Algorithm for Mesh-of-Tree …
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Refractive index controlled by film morphology and free carrier density in undoped ZnO through sol-pH variation
2018
Abstract Zinc oxide thin films, prepared by the sol-gel process, were deposited on glass substrate using spin coating technique. The sol-pH effect on the optical parameters was studied for alkaline sol. The surface roughness was investigated by atomic force microscopy (AFM) and varied from 20 to 40 nm. The optical transmission measurements were carried out to evaluate the behavior of the extinction coefficient and the refractive index. An exponential decay of the refractive index ‘n’ as a function of wavelength was observed. The refractive index increases slightly when the pH increases to pH = 9.5 where it reaches its maximum. Beyond this value, it decreases sharply. This behavior has been …
Determination of elastoplastic properties of TiO2 thin films deposited on dual phase stainless steel using nanoindentation tests
2010
International audience; In recent years, the extraction of mechanical behaviour of thin films by nanoindentation using sharp indenter geometry has been extensively studied. This work investigates the mechanical properties of TiO2 thin film (1 µm thickness) deposited by spin coating on dual phase Duplex stainless steel and glass substrates. Experiments are carried out with different sharp triangular pyramids (a Cube corner and a Berkovich indenter) using a commercial Nano Indenter® XP apparatus. The substrate effect has been counteracted and an inverse method proposed in literature for bulk material has been adapted to assess the elastoplastic parameters of the tested thin film directly from…
Deposition of binder-free oxygen-vacancies NiCo2O4 based films with hollow microspheres via solution precursor thermal spray for supercapacitors
2019
Abstract Hollow micro-/nanostructures and oxygen vacancies are highly desirable for supercapacitors due to high active surface area and outstanding electrochemical properties. In order to benefiting from the both effect, binder-free oxygen-vacancies NiCo2O4 based films with hollow microspheres were pioneering directly deposited via one kind thermal spray technology, named solution precursor thermal spray (SPTS) process. To our best knowledge, the rapid one-step SPTS route was firstly employed to synthesize and deposit NiCo2O4 films for supercapacitor applications. The CV data clearly demonstrated that the specific capacitances of more oxygen-deficient NiCo2O4 electrodes with hollow microsph…