Search results for "resistivity"

showing 10 items of 385 documents

Permanent photodoping of plasmonic gallium-ZnO nanocrystals

2020

This work was supported by the Latvian Council of Science in the framework of FLPP (Plasmonic oxide quantum dots for energy saving smart windows, lzp-2018/1-0187). Tanel Käämbre acknowledges financial support for the XPS instrumentation maintenance from the Estonian Centre of Excellence in Research project “Advanced materials and high- technology devices for sustainable energetics, sensorics and nanoelectronics” (TK141).

Materials scienceInfrared spectroscopychemistry.chemical_element02 engineering and technologyElectron010402 general chemistry01 natural sciences7. Clean energyoxygen vacanciesElectrical resistivity and conductivity:NATURAL SCIENCES:Physics [Research Subject Categories]General Materials ScienceGalliumPlasmonDopantbusiness.industryDopingtechnology industry and agriculture021001 nanoscience & nanotechnologyCrystallographic defect0104 chemical scienceschemistryOptoelectronicsnanoparticles0210 nano-technologybusiness
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Laser direct writing of gold conductors from metallorganic inks

1993

Laser deposition of gold lines from spin-on metallorganic (MO) precursors has been studied. A readily available and relatively low-cost commercial MO ink has been used to write gold interconnects on different substrates. The physical properties of the ink, its laser-firing process on oxidised silicon substrates and its electrical characterisation are presented here, together with the experimental procedure needed for obtaining low-resistivity deposits.

Materials scienceInkwellSiliconGeneral Chemical EngineeringAnalytical chemistrychemistry.chemical_elementNanotechnologyLaser direct writingLaserElectronic Optical and Magnetic Materialslaw.inventionchemistrylawElectrical resistivity and conductivityElectrical conductorLaser processingDeposition (law)Advanced Materials for Optics and Electronics
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Structural and electrical properties in tungsten/tungsten oxide multilayers

2014

International audience; Tungsten and tungsten oxide periodic nanometric multilayers have been deposited by DC reactive sputtering using the reactive gas pulsing process. Different pulsing periods have been used for each deposition to produce metal-oxide periodic alternations ranging from 3.3 to 71.5 nm. The morphology, crystallinity and chemical composition of these films have been investigated by transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. The produced multilayers exhibited an amorphous structure and the composition stability of WO3 sub-layers has been pointed out. Moreover, electrical properties have also been studied by the van der Pauw technique…

Materials scienceInorganic chemistrychemistry.chemical_element02 engineering and technologyTungsten01 natural sciencesCrystallinityVan der Pauw methodElectrical resistivity and conductivitySputtering0103 physical sciencesMaterials ChemistryThin film[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics010302 applied physicsTungsten CompoundsMetals and AlloysSurfaces and Interfaces021001 nanoscience & nanotechnologySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAmorphous solidchemistryChemical engineering[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics0210 nano-technology
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Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene

2019

Due to its outstanding electrical properties and chemical stability, graphene finds widespread use in various electrochemical applications. Although the presence of electrolytes strongly affects its electrical conductivity, the underlying mechanism has remained elusive. Here, we employ terahertz spectroscopy as a contact-free means to investigate the impact of ubiquitous cations (Li+, Na+, K+, and Ca2+) in aqueous solution on the electronic properties of SiO2-supported graphene. We find that, without applying any external potential, cations can shift the Fermi energy of initially hole-doped graphene by ∼200 meV up to the Dirac point, thus counteracting the initial substrate-induced hole dop…

Materials scienceLetterIonic bondingBioengineering02 engineering and technologyElectrolytedopingterahertz spectroscopy7. Clean energylaw.inventionsymbols.namesakeionic permeationlawElectrical resistivity and conductivityDopingGeneral Materials ScienceAqueous solutionGrapheneMechanical EngineeringDopingFermi levelFermi energyGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsChemical physicsTerahertz spectroscopysymbolsGraphene0210 nano-technologyIonic permeation
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Formation and Rupture of Schottky Nanocontacts on ZnO Nanocolumns

2007

In this paper, the electrical transport and mechanical properties of Pt/ZnO Schottky nanocontacts have been studied simultaneously during the formation and rupture of the nanocontacts. By combining multidimensional conducting scanning force spectroscopy with appropriated data processing, the physical relevant parameters (the ideality factor, the Schottky barrier height, and the rupture voltage) are obtained. It has been found that the transport curves strongly depend on the loading force. For loading forces higher than a threshold value, the transport characteristics are similar to those of large-area Schottky contact, while below this threshold deviations from strictly thermionic emission …

Materials scienceMacromolecular SubstancesSurface PropertiesSchottky barrierMolecular ConformationBioengineeringNanotechnologyThermionic emissionElectrical resistivity and conductivityMaterials TestingElectrochemistryNanotechnologyGeneral Materials ScienceParticle SizeNanotubesCondensed matter physicsbusiness.industryMechanical EngineeringElectric ConductivityForce spectroscopySchottky diodeEquipment DesignGeneral ChemistryCondensed Matter PhysicsEquipment Failure AnalysisSemiconductorSemiconductorsNanoelectronicsNanodotZinc OxideCrystallizationbusinessMicroelectrodesNano Letters
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Magnetotransport properties of epitaxial - and -oriented CeSb thin films

2000

Abstract We present the electronic magnetotransport properties of (1 0 0) - and (1 1 1) -oriented CeSb thin films. The samples were grown epitaxially by molecular beam epitaxy onto sapphire (1 1 2 0) and (0 0 0 1) substrates. The temperature-dependent resistivity is in full correspondence with the behaviour known from bulk material. For (1 0 0) -oriented films the analysis of the temperature and magnetic field-dependent magnetoresistivity results in a H/T phase diagram analogous to that of bulk samples. For (1 1 1) -oriented films slight deviations were observed. In Hall-effect measurements of (1 0 0) -oriented samples a sign change of the Hall coefficient occurred which is in contrast to m…

Materials scienceMagnetic momentCondensed matter physicsHall effectElectrical resistivity and conductivitySapphireElectrical and Electronic EngineeringThin filmCondensed Matter PhysicsEpitaxyElectronic Optical and Magnetic MaterialsMolecular beam epitaxyPhase diagramPhysica B: Condensed Matter
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Impact of granularity on transport properties of mechanically stressed La0.67Ca0.33MnO3 films

2001

Abstract (La,Ca)MnO 3 is one of so called collosal magnetoresistive materials and it is of interest to correlate its transport properties to film growth in order to optimize its performance. Two-hundred nanometers thick (100)La 0.67 Ca 0.33 MnO 3 films were grown by laser ablation on (100)SrTiO 3 , (100)LaAlO 3 and (100)(LaAlO 3 ) 0.3 +(Sr 2 AlTaO 6 ) 0.7 substrates. The films were granular in structure with low angle boundaries between the grains. The volume of the unit cell was considerably smaller for films grown on a SrTiO 3 substrate than on LaAlO 3 . At temperatures higher than the one where the spins order, the strongest response of resistivity on temperature ρ ( T ) was measured for…

Materials scienceMagnetoresistanceMechanical EngineeringAnalytical chemistryMineralogyGiant magnetoresistanceCondensed Matter PhysicsManganitePulsed laser depositionCrystallinityLattice constantMechanics of MaterialsElectrical resistivity and conductivityGeneral Materials ScienceThin filmMaterials Science and Engineering: B
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Hydrodynamical aspects of the floating zone silicon crystal growth process

2014

Abstract 3D numerical modeling of dopant transport in the melt is carried out for the 100 mm floating zone silicon single crystal growth process. The axis-symmetric shape of the molten zone is calculated with the program FZone considering the coil and the high frequency (HF) electromagnetic (EM) field in 3D. Time dependent melt flow, temperature and dopant concentration fields are modeled using a specialized solver based on the open source code library OpenFOAM ® . The influence of the Marangoni coefficient in the boundary conditions on the melt velocity field is analyzed. The obtained shapes of the crystallization interface and resistivity profiles in the grown crystal are compared with ex…

Materials scienceMarangoni effectSiliconDopantchemistry.chemical_elementMechanicsCondensed Matter Physicslaw.inventionInorganic ChemistryMonocrystalline siliconCrystalchemistryElectrical resistivity and conductivitylawCondensed Matter::SuperconductivityMaterials ChemistryCrystallizationMelt flow indexJournal of Crystal Growth
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Mechanical, thermal and electrical properties of monolayer and bilayer graded Al/SiC/rice husk ash (RHA) composite

2017

Abstract The mechanical, electrical and thermal properties as well as thermal expansion of Al/SiC/RHA (rice husk ash) monolayer and bilayer composite have been studied using the Taguchi method and analysis of variance (ANOVA). The parameter that most significantly affects the modulus of elasticity of Al/SiC/RHA bilayer composites is processing time, with contribution percentages of 68 and 27% calculated from stress-strain graphs and ultrasonic method, respectively. However, the factor which mostly affects bending strength, CTE value and electrical resistivity of composites is process temperature with contribution percentages of 32, 28, and 22%, respectively. The projected values for modulus…

Materials scienceMechanical EngineeringBilayerComposite numberMetals and AlloysYoung's modulus02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologyThermal diffusivity01 natural sciencesThermal expansion0104 chemical sciencessymbols.namesakeFlexural strengthMechanics of MaterialsElectrical resistivity and conductivityMonolayerMaterials ChemistrysymbolsComposite material0210 nano-technologyJournal of Alloys and Compounds
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Bilayer graded Al/B4C/rice husk ash composite: Wettability behavior, thermo-mechanical, and electrical properties

2018

In this study, wettability behavior of B4C substrate as well as B4C/crystalline rice husk ash and B4C/amorphous rice husk ash substrates with two aluminum alloys were studied. The electrical resistivity, thermal expansion coefficients, and thermal diffusivity of bilayer Al/B4C/rice husk ash composite fabricated by one-step pressureless infiltration were measured and the obtained data were systemically analyzed using the Taguchi method and analysis of variance. Boron carbide substrates after addition of amorphous or crystalline rice husk ash display good wettability with molten aluminum alloys. The results show that, electrical resistivity of Al/B4C/rice husk ash composites is mainly influe…

Materials scienceMechanical EngineeringBilayerComposite numberchemistry.chemical_element02 engineering and technologySubstrate (electronics)010402 general chemistry021001 nanoscience & nanotechnology01 natural sciencesHusk0104 chemical sciencesAmorphous solidchemistryMechanics of MaterialsAluminiumElectrical resistivity and conductivityMaterials ChemistryCeramics and CompositesWettingComposite material0210 nano-technologyJournal of Composite Materials
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