Search results for "rfa"

Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials

2016

Abstract The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors…

Evaluation of nano/submicro pores in suspension plasma sprayed YSZ coatings

2019

Abstract Nano-submicro pores could considerably influence the coating performances and thus should be properly designed for the intended applications. However, it is challenging to characterize accurately such small pores in coatings. In this study, YSZ coatings were firstly manufactured by suspension plasma spray (SPS) and the nano-submicro pores in as-prepared coatings were investigated using Ultra-small-angle X-ray scattering (USAXS). Afterwards, a multivariate analysis on the effect of five different process parameters was carried out. The two main results showed that: 1) the nano-submicro pores content in coatings has a negative correlation with suspension mass load and powder size, an…

HCl gas gettering of low-cost silicon

2013

HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…

3D modeling of growth ridge and edge facet formation in 〈100〉 floating zone silicon crystal growth process

2019

Abstract A 3D quasi-stationary model for crystal ridge formation in FZ crystal growth systems for silicon is presented. Heat transfer equations for the melt and crystal are solved, and an anisotropic crystal growth model together with a free surface shape solver is used to model the facet growth and ridge formation. The simulation results for 4″ and 5″ crystals are presented and compared to experimental ridge shape data.

Thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe20Ni80 spin-valve structures

2017

Abstract We investigated the thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe 20 Ni 80 spin-valve structures. Thin film systems were obtained with the help of sputtering method. For the first type of systems two particular thicknesses ( d ML  = 3 and 20 nm) and different disposition of magnetic layers (ML) were used. For the second type different thickness of Ag ( d NML ) spacer layer was used. The research of the crystal structure was performed with the transmission electron microscope. The results demonstrate that every investigated as-deposited sample does not include solid solutions, intermetallic compounds or impurities. It has been found that among the spin-valve…

Effect of oxidation post treatments on TiO2 coating manufactured using reactive very low-pressure plasma spraying (R-VLPPS)

2020

Abstract TiO2 coatings manufactured using reactive very low-pressure plasma spraying (R-VLPPS) were analyzed in different regions related to their position compared to the plasma flame. For that, a screen was used in order to hide an area of the substrate from the direct plasma flux. The coating morphology changed from quasi lamellar structure to highly vapor structure and coatings exhibited obvious modifications in terms of phases and mechanical properties. The effect of oxidation post treatment on the as sprayed coating was then studied by selecting two methods: in situ oxidation post treatment and classical thermal treatment. The two post treatments provided an increase of the main rutil…

Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark

2019

Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…

2018

Damping distances of surface plasmon polariton modes sustained by different thin titanium nitride (TiN) films are measured at the telecom wavelength of 1.55 μm. The damping distances are correlated to the electrical direct current resistivity of the films sustaining the surface plasmon modes. It is found that TiN/Air surface plasmon mode damping distances drop non-linearly from 40 to 16μm as the resistivity of the layers increases from 28 to 130μΩ.cm, respectively. The relevance of the direct current (dc) electrical resistivity for the characterization of TiN plasmonic properties is investigated in the framework of the Drude model, on the basis of parameters extracted from spectroscopic ell…

State-space formulation of scalar Preisach hysteresis model for rapid computation in time domain

2015

A state-space formulation of classical scalar Preisach model (CSPM) of hysteresis is proposed. The introduced state dynamics and memory interface allow to use the state equation, which is rapid in calculation, instead of the original Preisach equation. The main benefit of the proposed modeling approach is the reduced computational effort which requires only a single integration over the instantaneous line segment in the Preisach plane. Numerical evaluations of the computation time and model accuracy are provided in comparison to the CSPM which is taken as a reference model.