Search results for "scanning electron"

showing 10 items of 667 documents

Gas sensing properties of Zn-doped p-type nickel ferrite

2012

Abstract The influence of zinc ion to the NiFe2O4 p-type semiconductor gas response characteristics is demonstrated. For characterization of gas sensor material, synthesized by sol–gel auto combustion method, X-ray diffraction (XRD), scanning electron microscopy (SEM), DC resistance and impedance spectroscopy (IS) measurements were employed. The response change of Zn doped nickel ferrite is related to the interruption of hole hopping between nickel ions. This was improved by change of conductivity type with temperature and gas exposure.

DiffractionMaterials scienceScanning electron microscopebusiness.industryMetals and AlloysAnalytical chemistryConductivityCondensed Matter PhysicsCombustionSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCharacterization (materials science)NanomaterialsDielectric spectroscopySemiconductorMaterials ChemistryElectrical and Electronic EngineeringbusinessInstrumentationSensors and Actuators B: Chemical
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Preparation and Electric Properties of Barium Zirconium Titanate Ceramic

2015

The relaxor behavior of barium zirconium titanate ceramics BaZr0.35Ti0.65O3 prepared by a conventional sintering process was investigated. The synthesized material was determined by an X-ray diffraction and scanning electron microscopy. Based on performed studies, the BaZr0.35Ti0.65O3 ceramic material has been identified as canonical relaxor, related to the Ti-rich polar regions. The freezing temperature Tf and activation energy Ea are calculated from the Vogel-Fulcher relationship.

DiffractionMaterials scienceScanning electron microscopechemistry.chemical_elementSinteringBariumActivation energyCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsDielectric spectroscopychemistry.chemical_compoundchemistryChemical engineeringvisual_artBarium titanatevisual_art.visual_art_mediumCeramicFerroelectrics
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CuInS2 Films for Photovoltaic Applications Deposited by a Low-Cost Method.

2006

We report an atmospheric-pressure deposition method for preparing well-adhered and compact CuInS 2 films. The precursor film is obtained by a solution-coating technique and is subjected to a low-cost and safe one-step reduction-sulfurization treatment. A maximum thickness of 300 nm is achieved per layer, and up to three layers were sulfurized at a time. The obtained films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and visible-near-infrared (vis-NIR) spectrophotometry.

DiffractionMaterials sciencemedicine.diagnostic_testChemistryScanning electron microscopeGeneral Chemical EngineeringPhotovoltaic systemAnalytical chemistryNanotechnologyGeneral ChemistryGeneral MedicineX-ray photoelectron spectroscopyChemical engineeringSpectrophotometryMaterials ChemistrymedicineDeposition (phase transition)Layer (electronics)Deposition (chemistry)ChemInform
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Template-based synthesis of nickel oxide

2015

Nanocrystalline NiO has been produced using a facile template-based synthesis from nickel nitrate solutions using cellulose as a template. Thus obtained oxides were studied by scanning electron microscopy, x-ray diffraction, Raman scattering spectroscopy, photoluminescence spectroscopy and confocal spectromicroscopy. The filamentary/coral morphology of the samples has been evidenced and is built up of agglomerated nanocrystallites with a size in the range of about 26-36 nm. The presence of two-magnon contribution in Raman scattering spectra suggests the existence of antiferromagnetic ordering at room temperature. Finally, the observed near-infrared photoluminescence band at 850 nm has been …

DiffractionNickelCrystallographyPhotoluminescenceMaterials sciencechemistryScanning electron microscopeNickel oxideNon-blocking I/OAnalytical chemistrychemistry.chemical_elementSpectroscopyNanocrystalline materialIOP Conference Series: Materials Science and Engineering
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Effect of gamma radiation on thermostimulated exoelectron emission from Gd2O3 films

2020

Abstract The effect of gamma irradiation on Gd2O3 films was studied using the thermostimulated exoelectron emission (TSEE) technique. The films were deposited on a glass and Si/SiO2 substrates using an extraction-pyrolytic method. Crystalline structure, chemical composition, film thickness and surface morphology were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films were irradiated by 10 MeV gamma photons and TSEE was measured from the irradiated films. It was found that gamma irradiation decreases TSEE intensity and the area below TSEE spectral curves. A linear correlati…

DiffractionNuclear and High Energy PhysicsRange (particle radiation)Materials scienceX-ray photoelectron spectroscopyScanning electron microscopeAnalytical chemistryIrradiationElectronRadiationInstrumentationExoelectron emissionNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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Vapor growth of Hg1−xCdxI2 on glass using CdTe buffer

2001

Abstract Vapor phase epitaxy (VPE) of Hg1−xCdxI2 layers on glass substrates covered by a CdTe buffer layer has been studied. The buffer layers of 2–4 μm thickness were formed by VPE using polycrystalline CdTe and Cd metal sources. The Hg1−xCdxI2 layers were grown using a (Hg1−yCdy)1−z(I2)z polycrystalline source, with a composition in the range of y=0.1–0.5 and z=0.5–0.8. Scanning electron microscopy and X-ray diffraction studies have shown that the composition and structure of Hg1−xCdxI2 layers depend strongly on the VPE conditions. Varying the growth time and source composition, it has been possible to obtain Hg1−xCdxI2 layers with the composition x in the range from approximately 0 (HgI2…

DiffractionScanning electron microscopeChemistrybusiness.industryMetals and AlloysAnalytical chemistrySurfaces and InterfacesEpitaxyCadmium telluride photovoltaicsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsMetalTetragonal crystal systemOpticsvisual_artMaterials Chemistryvisual_art.visual_art_mediumCrystallitebusinessLayer (electronics)Thin Solid Films
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X-ray diffraction line broadening on vibrating dry-milled Two Crows sepiolite

2006

A reference sample of sepiolite and products of its comminution by vibrating dry-milling have been studied using X-ray diffraction (XRD) line-broadening analysis, complementary field emission scanning electron microscopy (FESEM) images and surface area measurements. The apparent crystallite sizes determined via XRD are in agreement with observations on FESEM images. The sepiolite aggregates consist of lath-shaped agglutinations of prisms and pinacoids elongated along [001], each lath including several crystallites in that direction. The surface area magnitudes are in the range of previous experimental measurements of other sepiolites. The results obtained show the effectiveness of vibro-mil…

DiffractionScanning electron microscopeCrystalline Lattice StrainSepioliteAnalytical chemistrySoil ScienceMineralogyLathengineering.materialchemistry.chemical_compoundReference ClayGeochemistry and PetrologyNevada SepioliteEarth and Planetary Sciences (miscellaneous)Crystallite SizeWater Science and TechnologySepioliteX-ray DiffractionLine BroadeningSurface AreaSilicatechemistryX-ray crystallographyengineeringCrystalliteComminutionGeologyClays and Clay Minerals
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Investigation of Silicon Carbide Polytypes by Raman Spectroscopy

2014

Abstract Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are studied using Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of the defect stacking faults, inclusions of defects and their distribution has shown that they correlate with the peak positions of the obtained Raman spectra and with the XRD data on the crystal structure

DiffractionScanning electron microscopePhysicsQC1-999General EngineeringStackingAnalytical chemistryGeneral Physics and AstronomySem analysisChemical vapor depositionCrystal structurex-ray diffraction (xrd)silicon carbide (sic)symbols.namesakechemistry.chemical_compoundraman spectroscopychemistrysymbolsSilicon carbidepolytypesRaman spectroscopyLatvian Journal of Physics and Technical Sciences
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Investigation of AC Electrical Properties of MXene-PCL Nanocomposites for Application in Small and Medium Power Generation

2021

The paper examined Ti3C2Tx MXene (T—OH, Cl or F), which is prepared by etching a layered ternary carbide Ti3AlC2 (312 MAX-phase) precursor and deposited on a polycaprolactone (PCL) electrospun membrane (MXene-PCL nanocomposite). X-ray Diffraction analysis (XRD) and Scanning Electron Microscopy (SEM) indicates that the obtained material is pure Ti3C2 MXene. SEM of the PCL-MXene composite demonstrate random Ti3C2 distribution over the nanoporous membrane. Results of capacitance, inductance, and phase shift angle studies of the MXene-PCL nanocomposite are presented. It was found that the frequency dependence of the capacitance exhibited a clear sharp minima in the frequency range of 50 Hz to o…

DiffractionTechnologyControl and OptimizationNanocompositeMaterials scienceRenewable Energy Sustainability and the EnvironmentScanning electron microscopeTEnergy Engineering and Power TechnologyMXene-PCL nanocompositesElectronflexible electronicsCapacitanceMolecular physicsInductanceAmplitudeelectrical propertiesElectrical and Electronic EngineeringMXeneTernary operationEngineering (miscellaneous)small and medium power generationEnergy (miscellaneous)Energies
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Phase separation as a key to a thermoelectric high efficiency

2012

This work elucidates the possible reasons for the outstanding, but never reproduced thermoelectric properties of the doped Ti(0.5)Zr(0.25)Hf(0.25)NiSn Heusler compounds. The structural investigations done via synchrotron X-ray diffraction measurements and scanning electron microscope measurements, which clearly show that the microstructure consists of three temperature stable C1(b) phases with possible semi-coherent interfaces, are presented. The exceptional thermoelectric properties are due to this intrinsic phase separation. It is possible to reproduce the high Figure of Merit values with ZT = 1.2 at 830 K. Furthermore, the influence of doping different elements on the Sn position in this…

DiffractionWork (thermodynamics)Materials scienceCondensed matter physicsScanning electron microscopeDopingGeneral Physics and AstronomyMicrostructureSynchrotronlaw.inventionCrystallographylawThermoelectric effectFigure of meritPhysical and Theoretical ChemistryPhys. Chem. Chem. Phys.
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