Search results for "schottky"

A DC and small signal AC model for organic thin film transistors including contact effects and non quasi static regime

2017

Abstract We present a compact model for the DC and small signal AC analysis of Organic Thin Film Transistors (OTFTs). The DC part of the model assumes that the electrical current injected in the OTFT is limited by the presence of a metal/organic semiconductor junction that, at source, acts as a reverse biased Schottky junction. By including this junction, modeled as a reverse biased gated diode at source, the DC model is able to reproduce the scaling of the electrical characteristics even for short channel devices. The small signal AC part of the model uses a transmission line approach in order to compute the impedances of the channel and parasitic regions of the device. The overlap capacit…

Electrical and photoelectrical measurements on ZnO-Nanowires coated with PEDOT:PSS for Dye-Sensitized Solar Cells

2011

ABSTRACTDye-sensitized solar cells composed of an n-doped ZnO nanowire array and a p-doped polymer layer appears to be a promising candidate for low-cost production of environment-friendly solar cells. In this work, we investigate hybrid devices consisting of a transparent conducting oxide (TCO) substrate, ZnO-nanowires (ZnO-NW) or a sol-gel prepared ZnO layer, a ruthenium dye (N719) and a PEDOT:PSS or P3HT layer. The dense polycrystalline ZnO layer is able to prevent short circuits, which have a strong effect on the performance of the solar cells. This is demonstrated by the use of only the ZnO layer which improves the open circuit voltage by a factor of 2 and the efficiency by a factor of…

Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures

2004

To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Passive and transpassive behaviour of Alloy 31 in a heavy brine LiBr solution

2013

The passive and transpassive behaviour of Alloy 31, a highly alloyed austenitic stainless steel (UNS N08031), has been investigated in a LiBr heavy brine solution (400 g/l) at 25 °C using potentiostatic polarisation combined with electrochemical impedance spectroscopy and Mott–Schottky analysis. The passive film formed on Alloy 31 has been found to be p-type and/or n-type in electronic character, depending on the film formation potential. The thickness of the film formed at potentials within the passive region increases linearly with applied potential. The film formed at transpassive potentials is thinner and more conductive than the film formed within the passive region. These observations…

Higher PV Module Efficiency by a Novel CBS Bypass

2011

There is an increasing focus on reducing costs and improving efficiency for photovoltaic (PV) cells and modules as well as finding a more efficient approach to the product manufacturing. This letter introduces an innovative solution to bypass shaded PV cells instead of a traditional Schottky diode, in order to avoid overheating of cells in the case of partial shading. The goal is to reduce the power dissipation and improve the general efficiency of a PV generator. A novel device called cool bypass switch is then presented. It is made up of a Power MOS driven by a controller with the task to charge a storage capacitor. Tests and comparisons with standard Schottky diodes are then performed an…

Investigation of amorphous oxide film-electrolyte junctions by AC techniques

1992

Current AC (alternating current) techniques are used often to characterize the energetics at a semiconducting solid phase/electrolyte interface. For thin layers having a strongly disordered or amorphous structure (such as oxide-passive layers anodically grown on valve metals), interpretative models currently used for crystalline semiconductors may produce misleading data. A new interpretation of the admittance data, based on recent models for amorphous semiconductors (a-Sc) Schottky barriers, is presented for passive films of Nb, W and Ti. The physical bases of the model are presented as well as its advantages and disadvantages. The new theory views the solid/electrolyte interface more sati…

Internal photoemission in solar blind AlGaN Schottky barrier photodiodes

2005

We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increase linearly with the band gap energy of the AlGaN alloy. The amplitude of the internal photoemission signal is about 20 times smaller than the value given by the Fowler theory based on a free electron model. We explain this result by taking into account the interband transitions and the ballistic transport of photoexcited electrons in the metal. This low value of internal photoemission allows us to achieve a spectral rejection ratio betwee…

Tribovoltaic Device Based on the W/WO3 Schottky Junction Operating through Hot Carrier Extraction

2021

Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy

2016

Contacts with MoS2 are currently the object of many investigations, since current injection through metal/MoS2 interfaces represents one of the limiting factors to the performance of MoS2 thin film transistors. In this paper, we employed conductive atomic force microscopy (CAFM) to investigate the current injection mechanisms from a nanometric contact (a Pt coated tip) to the surface of MoS2 thin films exfoliated on SiO2. The analysis of local current-voltage (I-V) characteristics on a large array of tip positions provided high spatial resolution information on the lateral homogeneity of the tip/MoS2 Schottky barrier Phi(B) and of the ideality factor n. From the histograms of the measured P…

Polymer/metal hybrid multilayers modified Schottky devices

2013

Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1-5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers …